Handling grown bad blocks in a memory device
A data storage device includes a bad block management system. The bad block management system detects a grown bad block of the data storage device. When a grown bad block is detected, the bad block management system initiates a manual block write process on the wordlines associated with the grown bad block. The manual block write process includes programming the wordlines of the grown bad block in a particular state and with a voltage that closes a leakage path between a bit line associated with the grown bad block and a ground line or a ground path associated with the grown bad block.
1 . A method, comprising:
identifying a grown bad block of a memory device;
determining whether the grown bad block is correctable; and
based, at least in part, on determining the grown bad block is correctable:
identifying a plurality of wordlines associated with the grown bad block; and
performing a manual block write process on the plurality of wordlines to close a leakage path associated with the grown bad block, the manual block write processes comprising:
programming a first subset of the plurality of wordlines associated with the grown bad block using a first voltage, the first voltage exceeding a programming voltage associated with other memory blocks of the memory device; and
programming a second subset of the plurality of wordlines associated with the grown bad block using a second voltage that exceeds the first voltage.
2 . The method of claim 1 , wherein the leakage path enables a current to flow between a bit line associated with the grown bad block and a ground path associated with the grown bad block.
3 . The method of claim 1 , wherein the second subset of the plurality of wordlines includes at least four wordlines.
4 . The method of claim 1 , further comprising determining whether a threshold number of program/erase (P/E) cycles have occurred on the memory device.
5 . The method of claim 1 , further comprising storing information associated with the grown bad block when it is determined the grown bad block is uncorrectable.
6 . A data storage device, comprising:
a controller; and
a bad block management system associated with the controller and operable to:
identify whether a memory block of the data storage device is classified as a grown bad block; and
based, at least in part, on the memory block being classified as a grown bad block:
identify a plurality of wordlines associated with the memory block; and
initiate a manual block write process on the plurality of wordlines of the memory block to close a leakage path associated with the memory block, the manual block write process comprising:
programming a first subset of the plurality of wordlines associated with the grown bad block using a first voltage, the first voltage exceeding a programming voltage associated with other memory blocks; and
programming a second subset of the plurality of wordlines associated with the grown bad block using a second voltage that is higher than the first voltage.
7 . The data storage device of claim 6 , wherein the bad block management system is further operable to determine whether the memory block is correctable.
8 . The data storage device of claim 7 , wherein the bad block management system is further operable to notify a host device that the memory block is uncorrectable.
9 . The data storage device of claim 6 , wherein the current leakage path enables a current to flow between a bit line associated with the memory block and a ground path associated with the memory block.
10 . The data storage device of claim 6 , wherein the second subset of the plurality of wordlines includes at least four wordlines.
11 . A non-volatile storage device, comprising:
one or more memory dies;
means for determining whether a memory block of the one or more memory dies is a grown bad block;
means for identifying a plurality of wordlines associated with the memory block; and
means for performing a manual block write process on the plurality of wordlines associated with the memory block, the manual block write process comprising:
programming a first subset of the plurality of wordlines using a first voltage, the first voltage exceeding a programming voltage associated with other memory blocks of the memory device; and
programming a second subset of the plurality of wordlines using a second voltage, the second voltage exceeding the first voltage.
12 . The non-volatile storage device of claim 11 , further comprising means for determining whether the memory block is correctable.
13 . The non-volatile storage device of claim 11 , further comprising means for notifying a host device associated with the non-volatile storage device that the memory block is uncorrectable.
14 . The non-volatile storage device of claim 11 , further comprising means for storing information associated with the memory block when it is determined the memory block is uncorrectable.
15 . The non-volatile storage device of claim 11 , further comprising means for determining whether over a threshold number of program/erase (P/E) cycles have occurred on the memory block.
16 . The non-volatile storage device of claim 12 , wherein the means for determining whether the memory block is correctable executes one or more operations on the memory block, the one or more operations comprising:
a read/verify operation;
an error correction code analysis operation; and
a determination regarding an amount of time it takes to perform an error correction operation on data stored in the memory block.
17 . The non-volatile storage device of claim 11 , wherein programming the first subset of the plurality of wordlines using the first voltage and programming the second subset of the plurality of wordlines using the second voltage comprises programming each of the first subset and the second subset to a particular state.
18 . The method of claim 1 , wherein programming the first subset of the plurality of wordlines associated with the grown bad block using the first voltage and programming the second subset of the plurality of wordlines associated with the grown bad block using the second voltage comprises programming each of the first subset and the second subset to a particular state.
19 . The method of claim 1 , the second subset of the plurality of wordlines are programmed using the second voltage after being previous programmed using the first voltage.
20 . The data storage device of claim 6 , wherein the second subset of the plurality of wordlines were part of the first subset of the plurality of wordlines when the first subset of the plurality of wordlines were programmed using the first voltage.