System for controlling voltage in non-volatile memory systems
View Patent ↗System for a non-volatile memory system is provided. The non-volatile memory system includes a voltage generator system operating in one of a plurality of modes for generating a voltage applied to a memory cell of the non-volatile memory system. For one of the plurality of modes, a first input value is selected for controlling a temperature dependent component of the voltage and a second input value is selected for controlling a temperature independent component of the voltage. The temperature dependent component of the voltage and the temperature independent component of the voltage are controlled independently in response to the first input value and the second input value.
1. A non-volatile memory system comprising;
a voltage generator system operating in one of a plurality of modes for generating a voltage applied to a memory cell; and
a time multiplexing system for selecting a first input value and a second input value for one of the plurality of modes of operation of the voltage generator system; the first input value controlling a temperature dependent component of the voltage applied to the memory cell, and the second input value controlling a temperature independent component of the voltage applied to the memory cell.
2. The non-volatile memory system of claim 1 , wherein the voltage generator system comprises:
a temperature dependent voltage generator for generating the temperature dependent component of the voltage;
a temperature independent voltage generator for generating the temperature independent component of the voltage; and
an amplifier for receiving an output of the temperature dependent voltage generator and an output of the temperature independent voltage generator; and generating the voltage applied to the memory cell.
3. The non-volatile memory system of claim 2 , wherein the temperature independent voltage generator comprises a band-gap reference voltage generator.
4. The non-volatile memory system of claim 1 , wherein the plurality of modes comprises a read mode and a program verify mode.
5. The non-volatile memory system of claim 1 , wherein one of the plurality of modes comprises a select gate drain (V SGD ) mode.
6. The non-volatile memory system of claim 1 , wherein a signal controlled by a state machine enables the voltage generator system to operate in one of the plurality of modes.
7. The non-volatile memory system of claim 1 wherein the first input value is a temperature coefficient value that adjusts a first multiplier value to control the temperature dependent component of the voltage applied to the memory cell; and the second input value adjusts a second multiplier value to control the temperature independent component of the voltage applied to the memory cell.
8. A system for generating a voltage for a non-volatile memory system, comprising:
a voltage generator system including a temperature dependent voltage generator for generating a temperature-dependent component of a voltage, and a temperature independent voltage generator for generating a temperature independent component of the voltage, the voltage generator system configured to operate in one of a plurality of modes to generate a voltage applied to a memory cell;
a time multiplexing system for selecting a first input value and a second input value for one of the plurality of modes of operation of the voltage generator system, the first input value controlling a temperature dependent component of the voltage applied to the memory cell, and the second input value controlling a temperature independent component of the voltage applied to the memory cell.
9. The system of claim 8 , further comprising an amplifier for receiving an output of the temperature dependent voltage generator and an output of the temperature independent voltage generator, and generating the voltage applied to the memory cell.
10. The system of claim 8 , wherein the temperature independent voltage generator comprises a band-gap reference voltage generator.
11. The system of claim 8 , wherein the plurality of modes comprises a read mode and a program verify mode.
12. The system of claim 8 , wherein one of the plurality of modes comprises a select gate drain (V SGD ) mode.
13. The system of claim 8 , wherein a signal controlled by a state machine enables the voltage generator system to operate in one of the plurality of modes.
14. The system of claim 8 , wherein the first input value is a temperature coefficient value that adjusts a first multiplier value to control the temperature dependent component of the voltage applied to the memory cell, and the second input value adjusts a second multiplier value to control the temperature independent component of the voltage applied to the memory cell.
15. The system of claim 14 , wherein the first multiplier value adjusts an output of the temperature dependent voltage generator and the second multiplier value adjusts an output of the temperature independent voltage generator.