Semiconductor device and method of forming a protective layer on a backside of the wafer

1. A method of making a semiconductor device, comprising: providing a semiconductor wafer;

forming a plurality of bumps on a first surface of the semiconductor wafer; forming a protective layer on an entire second surface of the semiconductor wafer opposite the first surface containing the bumps;

singulating the semiconductor wafer into semiconductor die after forming the protective layer on the entire second surface of the semiconductor wafer so that the protective layer terminates at an edge of the second surface of the semiconductor die; mounting the semiconductor die to a carrier with the protective layer formed on the entire second surface oriented away from the carrier and the bumps oriented toward the carrier, the semiconductor die being separated from the carrier by the bumps;

positioning the semiconductor die within a molding cavity;

forming a molding compound around a side of the semiconductor die and around the bumps under pressure while the semiconductor die is within the molding cavity, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the molding process; and

removing the entire protective layer from the semiconductor die after forming the molding compound around the semiconductor die and bumps leaving the entire second surface of the semiconductor die devoid of the molding compound for heat dissipation from the second surface of the semiconductor die.

2. The method of claim 1 , wherein the protective layer includes a material selected from the group consisting of adhesive paste, laminated film, spin-coated resin, epoxy based elastomer, organic rubbery material, polystyrene, polyethylene terephthalate, or other polymer material.

3. The method of claim 1 , wherein the protective layer includes a metal or polymer-based material.

4. The method of claim 1 , wherein the protective layer includes a filler material selected from the group consisting of alumina, zinc oxide, silicon dioxide, silver, aluminum, and aluminum nitride.

5. A method of making a semiconductor device, comprising: providing a semiconductor wafer;

forming an interconnect structure on a first surface of the semiconductor wafer;

forming a protective layer on an entire second surface of the semiconductor wafer opposite the first surface containing the interconnect structure;

singulating the semiconductor wafer into semiconductor die after forming the protective layer on the entire second surface of the semiconductor wafer so that the protective layer terminates at an edge of the second surface of the semiconductor die;

disposing the semiconductor die within a pressurized cavity;

forming a molding compound around a side of the semiconductor die and around the interconnect structure within the pressurized cavity, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the molding process; and

removing the entire protective layer from the semiconductor die after forming the molding compound around the semiconductor die and interconnect structure leaving the entire second surface of the semiconductor die devoid of the molding compound for heat dissipation from the semiconductor die.

6. The method of claim 5 , further including mounting the semiconductor die to a carrier prior to the step of forming the molding compound around the semiconductor die.

7. The method of claim 5 , wherein the protective layer includes a material selected from the group consisting of adhesive paste, laminated film, spin-coated resin, epoxy based elastomer, organic rubbery material, polystyrene, polyethylene terephthalate, or other polymer material.

8. The method of claim 5 , wherein the protective layer includes a metal or polymer-based material.

9. The method of claim 5 , wherein the protective layer includes a filler material selected from the group consisting of alumina, zinc oxide, silicon dioxide, silver, aluminum, and aluminum nitride.

10. The method of claim 5 , wherein the interconnect structure includes bumps.

11. A semiconductor device, comprising:

a semiconductor die;

an interconnect structure formed on a first surface of the semiconductor die;

a protective layer formed on an entire second surface of the semiconductor die opposite the first surface containing the interconnect structure, the protective layer terminating at an edge of the second surface of the semiconductor die; and

a molding compound formed around a side of the semiconductor die and around the interconnect structure, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the molding process, and the entire protective layer is removed from the semiconductor die after forming the molding compound around the semiconductor die and interconnect structure leaving the entire second surface of the semiconductor die devoid of the molding compound for heat dissipation.

12. The semiconductor device of claim 11 , wherein the protective layer includes a material selected from the group consisting of adhesive paste, laminated film, spin-coated resin, epoxy based elastomer, organic rubbery material, polystyrene, polyethylene terephthalate, or other polymer material.

13. The semiconductor device of claim 11 , wherein the protective layer includes a filler material selected from the group consisting of alumina, zinc oxide, silicon dioxide, silver, aluminum, and aluminum nitride.

14. A method of making a semiconductor device, comprising:

providing a semiconductor die;

forming an interconnect structure over a first surface of the semiconductor die;

forming a protective layer over an entire second surface of the semiconductor die opposite the first surface so that the protective layer terminates at an edge of the second surface of the semiconductor die;

forming an encapsulant around a side of the semiconductor die and around the interconnect structure under pressure, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the encapsulation process; and

removing the entire protective layer from the semiconductor die after forming the encapsulant around the semiconductor die and interconnect structure leaving the entire second surface of the semiconductor die devoid of the encapsulant for heat dissipation.

15. The method of claim 14 , further including mounting the semiconductor die to a carrier prior to the step of forming the encapsulant around the semiconductor die.

16. The method of claim 14 , wherein the protective layer includes a material selected from the group consisting of adhesive paste, laminated film, spin-coated resin, epoxy based elastomer, organic rubbery material, polystyrene, polyethylene terephthalate, or other polymer material.

17. The method of claim 14 , wherein the protective layer includes a metal or polymer-based material.

18. The method of claim 14 , wherein the protective layer includes a filler material selected from the group consisting of alumina, zinc oxide, silicon dioxide, silver, aluminum, and aluminum nitride.

19. The method of claim 14 , wherein the interconnect structure includes a bump.

20. A method of making a semiconductor device, comprising: providing a semiconductor die;

forming an interconnect structure over a first surface of the semiconductor die;

forming a protective layer over an entire second surface of the semiconductor die opposite the first surface so that the protective layer terminates at an edge of the second surface of the semiconductor die; and

forming an encapsulant around a side of the semiconductor die and around the interconnect structure under pressure, wherein the protective layer reduces stress on the entire second surface of the semiconductor die during the encapsulation process; and

removing the protective layer for heat dissipation from the second surface of the semiconductor die.

21. The method of claim 20 , further including removing the entire protective layer from the semiconductor die after forming the encapsulant around the semiconductor die and interconnect structure leaving the entire second surface of the semiconductor die devoid of the encapsulant.

22. The method of claim 20 , further including mounting the semiconductor die to a carrier prior to the step of forming the encapsulant around the semiconductor die.

23. The method of claim 20 , wherein the protective layer includes a material selected from the group consisting of adhesive paste, laminated film, spin-coated resin, epoxy based elastomer, organic rubbery material, polystyrene, polyethylene terephthalate, or other polymer material.

24. The method of claim 20 , wherein the protective layer includes a metal or polymer-based material.

25. The method of claim 20 , wherein the protective layer includes a filler material selected from the group consisting of alumina, zinc oxide, silicon dioxide, silver, aluminum, and aluminum nitride.

26. The method of claim 20 , wherein the interconnect structure includes a bump.

27. The method of claim 20 , wherein the protective layer provides a thermal dissipation.

28. A method of making a semiconductor device, comprising:

providing a semiconductor die;

forming a protective layer over a first surface of the semiconductor die;

forming an encapsulant around the semiconductor die under pressure, wherein the protective layer protects the semiconductor die from stress and cracking; and

removing at least a portion of the protective layer from the semiconductor die for heat dissipation.

29. The method of claim 28 , further including forming an interconnect structure on a second surface of the semiconductor die opposite the first surface of the semiconductor die.

30. The method of claim 29 , further including forming the encapsulant around the interconnect structure.

31. The method of claim 28 , further including forming the encapsulant within a molding cavity.

32. The method of claim 28 , wherein the protective layer protects the entire first surface of the semiconductor die from stress and cracking.

33. The method of claim 28 , wherein the protective layer includes a thermally conductive material.