Semiconductor device and method of forming dual-sided interconnect structures in Fo-WLCSP
View Patent ↗A semiconductor device has a substrate including first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of wire studs or stud bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the wire studs. A first encapsulant is deposited around the semiconductor die. A first interconnect structure is formed over the semiconductor die and first encapsulant. A second encapsulant is deposited over the substrate, semiconductor die, and first interconnect structure. The second encapsulant can be formed over a portion of the semiconductor die and side surface of the substrate. A portion of the second encapsulant is removed to expose the substrate and first interconnect structure. A second interconnect structure is formed over the second encapsulant and first interconnect structure and electrically coupled to the wire studs. A discrete semiconductor device can be formed on the interconnect structure.
1. A method of making a semiconductor device, comprising:
providing a substrate including a first conductive layer formed over a first surface of the substrate;
forming a plurality of wire studs over the first surface of the substrate;
disposing a semiconductor die over the first surface of the substrate between the wire studs including a first interconnect structure formed on an active surface of the semiconductor die opposite the substrate;
depositing a first encapsulant around the substrate, wire studs, semiconductor die, and first interconnect structure, wherein a portion of the first interconnect structure and first ends of the wire studs are exposed from the encapsulant; and
forming a second interconnect structure over a surface of the first encapsulant opposite the substrate and contacting the first interconnect structure and wire studs.
2. The method of claim 1 , further including:
forming a second encapsulant around the semiconductor die; and
forming the first interconnect structure over the semiconductor die and second encapsulant.
3. The method of claim 1 , further including removing a portion of the first encapsulant to expose the first interconnect structure and first ends of the wire studs.
4. The method of claim 1 , further including removing a portion of the first encapsulant from over the substrate opposite the semiconductor die.
5. The method of claim 1 , further including forming the first encapsulant over a portion of the semiconductor die.
6. The method of claim 1 , further including depositing the first encapsulant to cover the first surface of the substrate and a side surface of the substrate approximately perpendicular to the first surface of the substrate.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a vertical interconnect structure over a first surface of the substrate;
disposing a semiconductor die over the first surface of the substrate with an active surface of the semiconductor die oriented away from the substrate and including a first conductive layer formed over the active surface prior to disposing the semiconductor die over the first surface of the substrate;
depositing a first encapsulant over the substrate, semiconductor die, and vertical interconnect structure, wherein the vertical interconnect structure and first conductive layer are exposed at a surface of the first encapsulant opposite the substrate; and
forming a second interconnect structure over the first encapsulant after depositing the first encapsulant and contacting the first conductive layer and the vertical interconnect structure.
8. The method of claim 7 , wherein the substrate includes a second conductive layer with the vertical interconnect structure formed on the second conductive layer.
9. The method of claim 7 , further including:
depositing a second encapsulant around the semiconductor die; and
forming a build-up interconnect structure over the semiconductor die and second encapsulant, wherein the build-up interconnect structure includes the first conductive layer.
10. The method of claim 7 , further including removing a portion of the first encapsulant from over the first conductive layer to expose the first conductive layer from the first encapsulant.
11. The method of claim 7 , further including removing the portion of the first encapsulant by planarizing the first encapsulant.
12. The method of claim 7 , further including forming the first encapsulant over a portion of the semiconductor die.
13. The method of claim 7 , wherein the vertical interconnect structure includes a wire stud.
14. A method of making a semiconductor device, comprising:
forming a first interconnect structure;
providing a semiconductor die;
forming a protection layer over the semiconductor die;
disposing the semiconductor die over a first surface of the first interconnect structure after forming the first interconnect structure;
forming a plurality of stud bumps over the first surface of the first interconnect structure;
depositing an encapsulant over the first interconnect structure, semiconductor die, and stud bumps with the stud bumps exposed from the encapsulant;
removing the protection layer from over the semiconductor die after depositing the encapsulant; and
forming a second interconnect structure over the encapsulant, the stud bumps, and the semiconductor die to electrically connect the stud bumps and semiconductor die.
15. The method of claim 14 , further including disposing a discrete semiconductor device over the first interconnect structure.
16. The method of claim 14 , wherein forming the first interconnect structure includes:
forming a first insulating layer;
forming a conductive layer over the first insulating layer; and
forming a second insulating layer over the first insulating layer and conductive layer.
17. The method of claim 16 , further including removing a portion of the second insulating layer by laser direct ablation.
18. The method of claim 16 , further including forming a third insulating layer over the second insulating layer and conductive layer.
19. The method of claim 14 , wherein forming the second interconnect structure includes:
forming a first insulating layer over the encapsulant and semiconductor die;
forming a first conductive layer over the first insulating layer;
forming a second insulating layer over the first insulating layer and first conductive layer;
forming a second conductive layer over the second insulating layer and first conductive layer; and
forming a third insulating layer over the second insulating layer and second conductive layer.
20. A method of making a semiconductor device, comprising:
providing a substrate;
forming a wire stud on a first surface of the substrate;
disposing a semiconductor die on the first surface of the substrate;
depositing an encapsulant over the semiconductor die, wire stud, and substrate;
removing a portion of the encapsulant from over the semiconductor die and wire stud;
forming a first interconnect structure over the encapsulant with the first interconnect structure physically contacting the wire stud and electrically connected to the semiconductor die;
forming a protection layer over the semiconductor die prior to depositing the encapsulant;
removing the protection layer after depositing the encapsulant; and
forming the first interconnection structure after removing the protection layer.
21. The method of claim 20 , wherein the substrate further includes a second interconnect structure.
22. The method of claim 20 , further including removing a second portion of the encapsulant from over the substrate opposite the semiconductor die.
23. The method of claim 20 , further including:
singulating the substrate;
disposing the substrate over a carrier with the semiconductor die oriented toward the carrier after singulating the substrate;
depositing the encapsulant over the substrate and carrier; and
removing the carrier after depositing the encapsulant.
24. The method of claim 23 , further including depositing the encapsulant to completely cover the substrate and carrier.