Damascene interconnect structure and fabrication method having air gaps between metal lines and metal layers
View Patent ↗A damascene interconnect that reduces interconnect intra-layer capacitance and/or inter-layer capacitance is provided. The damascene interconnect structure has air gaps between metal lines and/or metal layers. The interconnect structure is fabricated to a via level through a processing step prior to forming contact vias, then one or more air gaps are formed into the damascene structure so that the air gaps are positioned between selected metal lines. A sealing layer is then deposited over the damascene structure to seal the air gaps.
1. A method for fabricating a damascene interconnect structure having one or more air trenches and a plurality of spaced-apart metal lines comprising:
(a) fabricating the damascene structure to a via level through a processing step prior to forming contact vias, wherein step (a) comprises:
depositing a first dielectric layer;
depositing a first capping layer over the first dielectric layer;
forming a plurality of trenches in the first capping layer and the first dielectric layer;
filling the plurality of trenches with metal to form the plurality of spaced-apart-metal lines, wherein the plurality of spaced-apart metal lines are situated in the first capping layer and the first dielectric layer;
depositing a second capping layer directly on the first capping layer; and
depositing a second dielectric layer over the second capping layer;
(b) etching one or more air trenches into the damascene structure so that the air trenches are positioned over selected metal lines, wherein the one or more air trenches are not etched into the first dielectric layer and the first capping layer, wherein the second capping layer is situated over the selected metal lines; and
(c) depositing a sealing layer over the damascene structure having air trenches to seal the air trenches.
2. The method of claim 1 , wherein step (a) further includes
depositing a third capping layer over the second dielectric layer.
3. The method of claim 2 , further including:
etching an air trench in the first and second dielectric layers, and the first, second and third capping layers.
4. The method of claim 1 , further including:
forming a via in the sealing layer and the damascene structure; forming a metal plug in the via;
forming a trench over the sealing layer; and forming a conductive layer in the trench.
5. The method of claim 1 , further including:
depositing an etch stop layer over the sealing layer;
forming a via in the etch stop layer, the sealing layer and the damascene structure;
forming a metal plug in the via;
forming a trench over the etch stop layer; and forming a conductive layer in the trench.
6. The method of claim 1 , further including:
forming a via in the sealing layer;
forming a trench over the sealing layer;
forming a via in the damascene structure; and forming a conductive layer in the trench.
7. The method of claim 1 , further including:
forming a trench over the sealing layer;
forming a via in the sealing layer and the damascene structure; and forming a conductive layer in the trench.
8. The method of claim 1 , further including:
forming a via in the sealing layer and the damascene structure; forming a trench over the sealing layer; and forming a conductive layer in the trench.
9. A method for fabricating a damascene interconnect structure having one or more air trenches and a plurality of spaced-apart metal lines comprising:
(a) fabricating the damascene structure to a via level through a processing step prior to forming contact vias, wherein step (a) comprises:
depositing a first dielectric layer;
depositing a first capping layer over the first dielectric layer;
forming a plurality of trenches in the first capping layer and the first dielectric layer;
filling the plurality of trenches with metal to form the plurality of spaced-apart metal lines, wherein the plurality of spaced-apart metal lines are situated in the first capping layer and the first dielectric layer;
depositing a second capping layer directly on the first capping layer and over the plurality of spaced-apart metal lines; and
depositing a second dielectric layer over the second capping layer;
(b) etching one or more air trenches into the damascene structure so that the air trenches are positioned over selected metal lines, wherein the one or more air trenches are not etched into the first dielectric layer and the first capping layer;
(c) depositing a sealing layer over the damascene structure having air trenches to seal the air trenches;
(d) depositing a polish stop layer over the sealing layer; and
(e) depositing an etch stop layer directly on the polish stop layer.
10. The method of claim 9 , wherein step (a) further includes
depositing a third capping layer over the second dielectric layer.
11. The method of claim 10 , further including:
etching an air trench in the first and second dielectric layers, and the first, second and third capping layers.
12. The method of claim 9 , further including:
forming a via in the sealing layer and the damascene structure; forming a metal plug in the via;
forming a trench over the sealing layer; and forming a conductive layer in the trench.
13. The method of claim 9 , further including:
forming a via in the etch stop layer, the sealing layer and the damascene structure;
forming a metal plug in the via;
forming a trench over the etch stop layer; and forming a conductive layer in the trench.
14. The method of claim 9 , further including:
forming a via in the sealing layer;
forming a trench over the sealing layer;
forming a via in the damascene structure; and forming a conductive layer in the trench.
15. The method of claim 9 , further including:
forming a trench over the sealing layer;
forming a via in the sealing layer and the damascene structure; and forming a conductive layer in the trench.
16. The method of claim 9 , further including:
forming a via in the sealing layer and the damascene structure; forming a trench over the sealing layer; and forming a conductive layer in the trench.
17. A method for fabricating a damascene interconnect structure having one or more air trenches and a plurality of spaced-apart metal lines comprising:
(a) fabricating the damascene structure to a via level through a processing step prior to forming contact vias, wherein step (a) comprises:
depositing a first dielectric layer;
depositing a first capping layer over the first dielectric layer;
forming a plurality of trenches in the first capping layer and the first dielectric layer;
filling the plurality of trenches with metal to form the plurality of spaced-apart metal lines, wherein the plurality of spaced-apart metal lines are situated in the first capping layer and the first dielectric layer;
depositing a second capping layer directly on the first capping layer and over the plurality of spaced-apart metal lines;
depositing a second dielectric layer over the second capping layer; and
depositing a third capping layer over the second dielectric layer;
(b) etching one or more air trenches into the damascene structure so that the air trenches are positioned over selected metal lines, wherein the one or more air trenches are not etched into the first dielectric layer and the first capping layer;
(c) depositing a sealing layer over the damascene structure having air trenches to seal the air trenches; and
(d) depositing a polish stop layer over the sealing layer.
18. The method of claim 17 , further including:
etching an air trench in the first and second dielectric layers, and the first, second and third capping layers.