Granted Patent
Utility
US 6,379,978
· Confirmation No. 5996
MEMORY CELL CONFIGURATION IN WHICH AN ELECTRICAL RESISTANCE OF A MEMORY ELEMENT REPRESENTS AN INFORMATION ITEM AND CAN BE INFLUENCED BY A MAGNETIC FIELD, AND METHOD FOR FABRICATING IT
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2015-08-07 | OATH |
Oath or Declaration filed | 11 | View | |
| 2001-01-16 | TRNA |
Transmittal of New Application | 1 | View | |
| 2001-01-16 | SPEC |
Specification | 57 | View | |
| 2001-01-16 | CLM |
Claims | 8 | View | |
| 2001-01-16 | ABST |
Abstract | 1 | View | |
| 2001-01-16 | DRW |
Drawings-only black and white line drawings | 29 | View | |
| 2001-01-16 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Bernd Goebel
Munchen, GERMANY
Hermann Jacobs
Bruckmuhl, GERMANY
Siegfried Schwarzl
Neubiberg, GERMANY
Emmerich Bertagnolli
Wien, AUSTRIA
Attorneys & Agents of Record
Classification
USPC
438/3
Prosecution
- Examiner
- HO, HOAI V
- Art Unit
- 2818
- Docket No.
- GR 98 P 2082
- Confirmation No.
- 5996
Foreign Priority
198 31 820.0
·
1998-07-15
·
GERMANY
Publication
- Pub. No.
- US20010024380A1
- Pub. Date
- 2001-09-27
Patent Term Adjustment
0days
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2015-08-07
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2002-03-08
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Quick Facts
- Patent No.
- US 6,379,978
- App. No.
- 09/761,801
- Filed
- 2001-01-16
- Granted
- 2002-04-30
- Pub. No.
- US20010024380A1
- Examiner
- HO, HOAI V
- Art Unit
- 2818
- PTA
- 0 days
External Links