IP Library › Granted Patent US 6,458,679
Granted Patent Utility
US 6,458,679 · Confirmation No. 6399

METHOD OF MAKING A SILICIDE STOP LAYER IN A DAMASCENE SEMICONDUCTOR STRUCTURE

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 Code Description Pages PDF
2001-02-12 TRNA Transmittal of New Application 3 View
2001-02-12 SPEC Specification 6 View
2001-02-12 CLM Claims 2 View
2001-02-12 ABST Abstract 1 View
2001-02-12 DRW Drawings-only black and white line drawings 6 View
2001-02-12 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,458,679
App. No.
09/780,454
Filed
2001-02-12
Granted
2002-10-01
Art Unit
2823
PTA
-47 days