IP Library › Granted Patent US 6,365,450
Granted Patent Utility
US 6,365,450 · Confirmation No. 4509

FABRICATION OF P-CHANNEL FIELD EFFECT TRANSISTOR WITH MINIMIZED DEGRADATION OF METAL OXIDE GATE

Inventor: Hyeon-Seag Kim
Patented Case View Patent ↗
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 Code Description Pages PDF
2021-08-09 SOL.NTC.SUIT Report on the filing or determination of an action regarding a patent 1 View
2001-03-15 TRNA Transmittal of New Application 5 View
2001-03-15 SPEC Specification 16 View
2001-03-15 CLM Claims 7 View
2001-03-15 ABST Abstract 1 View
2001-03-15 DRW Drawings-only black and white line drawings 7 View
2001-03-15 OATH Oath or Declaration filed 3 View
2001-03-15 TRNA Transmittal of New Application 5 View
2001-03-15 SPEC Specification 16 View
2001-03-15 CLM Claims 7 View
2001-03-15 ABST Abstract 1 View
2001-03-15 DRW Drawings-only black and white line drawings 7 View
2001-03-15 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,365,450
App. No.
09/809,706
Filed
2001-03-15
Granted
2002-04-02
Art Unit
2813
PTA
0 days