IP Library › Granted Patent US 6,617,220
Granted Patent Utility
US 6,617,220 · Confirmation No. 6168

METHOD FOR FABRICATING AN EPITAXIAL BASE BIPLOAR TRANSISTOR WITH RAISED EXTRINSIC BASE

Patented Case View Patent ↗ View Publication ↗
⬇ PDF
 Code Description Pages PDF
2003-06-30 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-06-30 C.AD Change of Address 1 View
2001-07-25 TRNA Transmittal of New Application 4 View
2001-07-25 DRW Drawings-only black and white line drawings 10 View
2001-03-16 TRNA Transmittal of New Application 4 View
2001-03-16 SPEC Specification 22 View
2001-03-16 CLM Claims 7 View
2001-03-16 ABST Abstract 1 View
2001-03-16 DRW Drawings-only black and white line drawings 10 View
2001-03-16 OATH Oath or Declaration filed 3 View
2001-03-16 LET. Miscellaneous Incoming Letter 1 View
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this application's details
Quick Facts
Patent No.
US 6,617,220
App. No.
09/810,856
Filed
2001-03-16
Granted
2003-09-09
Pub. No.
US20020132438A1
Art Unit
2813
PTA
0 days