IP Library Granted Patent US 6,905,726
Granted Patent B2
US 6,905,726 · App. 09/817,967 · Granted Jun 14, 2005

Component having at least two mutually adjacent insulating layers and corresponding production method

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,905,726
App. No.
09/817,967
Granted
Jun 14, 2005
Kind
B2
Abstract

The invention relates to a component having two adjacent insulating layers and to a production process therefore. The component has an activated insulating layer, which can be converted into an electrically conductive layer by metallization.

Claims (25)

1. A component, which comprises:

a substrate;

a lower insulating layer having a layer thickness between 0.05 μm and 50 μm and having a region;

at least one upper insulating layer having a layer thickness between 0.05 μm and 50 μm, being chemically different and have different physical property profiles from said lower insulating layer, and having a region; and

at least one activated region that is selectively activated using an activator selected from the group consisting of a gas, a liquid, a solution, and plasma;

said at least one activated region being selected from the group consisting of said region of said lower insulating layer and said region of said at least one upper insulating layer, said activated region therefore being an activated insulating layer;

said lower insulation layer located adjacent said at least one upper insulation layer;

said activated region being one of a selectively modified region and a surface of said activated insulating layer such that subsequently only said activated region can be subjected to a process selected from a group of metallization, photosensitization, and hydrophobicization.

2. The component according to claim 1 , wherein said substrate, said lower insulating layer, and said at least one upper insulating layer form a component selected from the group consisting of an electronic component and a microelectronic component.

3. The component according to claim 1 , wherein said at least one said upper layer is a layer selected from the group consisting of a patterned layer and a mask layer for activating said lower layer.

4. The component according to claim 1 , wherein said at least one activated region is a region selected from the group consisting of a needed region and a metallized region.

5. A process for producing a component, which comprises:

in a first working step, applying a lower insulating layer having a layer thickness between 0.05 μm and 50 μm to a substrate;

in a second working step, selectively activating at least one region of the lower insulating layer using an activator selected from the group consisting of a gas, a liquid, a solution and plasma for forming an activated region being one of a selectively modified region and a surface of the lower insulating layer; and

in a third working step, applying at least one upper insulating layer having a layer thickness between 0.05 μm and 50 μm and being chemically different and have different physical property profiles from the lower insulating layer to the lower, activated insulating layer and patterning the at least one upper insulating layer.

6. The process according to claim 5 , which comprises patterning the lower insulating layer in the first working step.

7. The process according to claim 5 , which comprises choosing a selected layer from the group consisting of the at least upper one insulating layer and the lower insulating layer and patterning the selected layer after the selected layer has been applied.

8. A process for producing a component, which comprises:

in a first working step, applying a first insulating layer having a layer thickness between 0.05 μm and 50 μm to a substrate;

in a second working step, applying a second insulating layer having a layer thickness between 0.05 μm and 50 μm and being chemically different and have different physical property profiles from said at least one lower insulating layer and patterning the second insulating layer; and

in a third working step, selectively activating a layer selected from the group consisting of the first insulating layer and the second insulating layer using an activator selected from the group consisting of a gas, a liquid, a solution, and plasma far forming an activated insulating layer, the activating step includes the step of selectively modifying a region or a surface of the insulating layer.

9. The process according to claim 8 , which comprises patterning the first insulating layer during the first working step.

10. The process according to claim 8 , which comprises patterning the second insulating layer after the second working step and before the third working step.

11. The process according to claim 10 , which comprises patterning the first insulating layers after the first working step.

12. The process according to claim 8 , which comprises patterning the first insulating layer, after the first working step.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 3, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036539/0196 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 13, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023773/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2005
From: LOWACK, KLAUS; SCHMID, GUNTER; SEZI, RECAI
To: INFINEON TECHNOLOGIES AG
Reel/Frame 016515/0532 →