IP Library Granted Patent US 6,686,248
Granted Patent Utility
US 6,686,248 · Confirmation No. 3426

METHOD OF FABRICATING A SEMICONDUCTOR DEVICE HAVING A MOS TRANSISTOR WITH A HIGH DIELECTRIC CONSTANT MATERIAL

Inventor: Bin Yu
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Code Description Pages PDF
2003-12-15 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-12-15 LET. Miscellaneous Incoming Letter 2 View
2003-12-15 C.AD Change of Address 1 View
2003-11-24 PA.. Power of Attorney 2 View
2001-04-03 TRNA Transmittal of New Application 6 View
2001-04-03 SPEC Specification 6 View
2001-04-03 CLM Claims 5 View
2001-04-03 ABST Abstract 1 View
2001-04-03 DRW Drawings-only black and white line drawings 1 View
2001-04-03 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,686,248
App. No.
09/825,658
Filed
2001-04-03
Granted
2004-02-03
Art Unit
2824
PTA
0 days