Granted Patent
Utility
US 6,391,697
· Confirmation No. 9175
METHOD FOR THE FORMATION OF GATE ELECTRODE OF SEMICONDUCTOR DEVICE USING A DIFFERENCE IN POLISHING SELECTION RATIO BETWEEN POLYMER AND OXIDE FILM
Inventor:
Sang-Ick Lee
Inventors
Sang-Ick Lee
Ichon-shi, KOREA, REPUBLIC OF
Classification
USPC
438/197
H10D64/017
H10P50/00
H10D84/0135
H10D84/038
H10P52/403
Prosecution
- Examiner
- LE, DUNG ANH
- Art Unit
- 2818
- Docket No.
- P66263US0
- Confirmation No.
- 9175
Foreign Priority
2000-26895
·
2000-05-19
·
REPUBLIC OF KOREA
Publication
- Pub. No.
- US20020001914A1
- Pub. Date
- 2002-01-03
Patent Term Adjustment
0days
No related applications found.
CHANGE OF NAME
Recorded 2014-03-09
from
SK HYNIX INC
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2014-03-09
from
LEE, SANG-ICK
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2001-10-15
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Quick Facts
- Patent No.
- US 6,391,697
- App. No.
- 09/855,849
- Filed
- 2001-05-16
- Granted
- 2002-05-21
- Pub. No.
- US20020001914A1
- Examiner
- LE, DUNG ANH
- Art Unit
- 2818
- PTA
- 0 days
External Links