IP Library › Granted Patent US 6,690,060
Granted Patent Utility
US 6,690,060 · Confirmation No. 8416

FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME BY CONTROLLING DISTRIBUTION CONDITION OF IMPURITY REGION WITH IMPLANTATION OF ADDITIONAL ION

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2009-03-13 EBCC.AD Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update 1 View
2005-07-13 A.NA Amendment after Notice of Allowance (Rule 312) 2 View
2005-07-13 CLM Claims 12 View
2005-07-13 REM Applicant Arguments/Remarks Made in an Amendment 2 View
2005-07-13 LET. Miscellaneous Incoming Letter 3 View
2005-07-13 DRW Drawings-only black and white line drawings 43 View
2005-07-13 IDS Information Disclosure Statement (IDS) Form (SB08) 10 View
2003-12-22 IFEE Issue Fee Payment (PTO-85B) 1 View
2001-07-19 TRNA Transmittal of New Application 2 View
2001-07-19 SPEC Specification 49 View
2001-07-19 CLM Claims 8 View
2001-07-19 ABST Abstract 1 View
2001-07-19 DRW Drawings-only black and white line drawings 6 View
2001-07-19 OATH Oath or Declaration filed 4 View
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Quick Facts
Patent No.
US 6,690,060
App. No.
09/907,714
Filed
2001-07-19
Granted
2004-02-10
Pub. No.
US20020024078A1
Art Unit
2826
PTA
-9 days