Patent Assignment
Reel/Frame 014738/0714
Assignment of Assignor's Interest
Recorded: 2003-11-26
Received: 2003-12-02
Pages: 3
Assignor
HITACHI, LTD.
Executed: 2003-09-12
Assignee
RENESAS TECHNOLOGY CORPORATION
4-1, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, JPX, JAPAN
Covered Properties
(22)
Multiport Memory, Data Processor and Data Processing System
Application:
10/615,923 →
Semiconductor Device and Method of Manufacturing the Semiconductor Device
Application:
10/333,838 →
Method of Manufacturing a Semiconductor Device
Application:
10/439,110 →
Semiconductor device and its manufacturing method
Application:
10/430,189 →
Nonvolatile Memory System, Semiconductor Memory, and Writing Method
Application:
10/388,444 →
Semiconductor Device and Process for Manufacturing the Same
Application:
10/372,136 →
Semiconductor device and a method of manufacturing the same
Application:
10/369,766 →
Method of Fabricating Semiconductor Device
Application:
10/325,915 →
Semiconductor Device
Application:
10/319,511 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
10/303,841 →
Multiport Memory, Data Processor and Data Processing System
Application:
10/214,124 →
Electronic Apparatus and Design Method
Application:
10/170,375 →
Method of Manufacturing a Trench Mos Gate Device
Application:
10/104,012 →
Semiconductor Device and Process for Producing the Same
Application:
10/050,859 →
Disk Drive and Computer Which Starts Rewriting Operation in Accorance with Check of Data in Eeprom
Application:
10/023,660 →
Microcomputer and Dividing Circuit
Application:
10/011,807 →
Testing Board for Semiconductor Memory, Method of Testing Semiconductor Memory and Method of Manufacturing Semiconductor Memory
Application:
09/994,638 →
Storage, Storage Method, and Data Processing System
Application:
09/979,951 →
Ic with Internal Interface Switch for Testability
Application:
09/979,333 →
High-Frequency Power Amplification Module and Radio Communication Device
Application:
09/914,678 →
Data Processor
Application:
09/985,289 →
Field Effect Transistor and Method of Fabricating the Same by Controlling Distribution Condition of Impurity Region with Implantation of Additional Ion
Application:
09/907,714 →