Patent Assignment
Reel/Frame 039565/0907
Assignment of Assignor's Interest
Recorded: 2016-08-29
Received: 2016-08-29
Pages: 5
Assignor
HITACHI ULSI SYSTEMS CO., LTD.
Executed: 2016-08-10
Assignee
RENESAS ELECTRONICS CORPORATION
2-24, TOYOSU 3-CHOME, KOUTOU-KU, TOKYO, JPX, 135-0061, JAPAN
Covered Properties
(33)
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
13/406,715 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
13/095,480 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
12/169,408 →
Semiconductor Device and Its Test Method
Application:
12/153,746 →
Non-Volatile Memory Having Multiple Erase Operations
Application:
11/963,913 →
A Method of Manufacturing a Memory Card
Application:
11/987,621 →
Semiconductor Device and Ic Card
Application:
11/651,096 →
Semiconductor Integrated Circuit
Application:
11/541,605 →
Semiconductor Processing Device and Ic Card
Application:
10/521,553 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
11/484,690 →
Electronic Device and Method of Manufacturing the Same
Application:
11/326,448 →
High Frequency Power Amplification Electric Part and Wireless Communication System
Application:
11/231,819 →
Nonvolatile Semiconductor Memory Device
Application:
11/224,964 →
Semiconductor Device and Ic Card
Application:
10/512,480 →
Nonvolatile Memory with Independent Access Capability to Associated Buffer
Application:
10/510,150 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
11/041,232 →
Nonvolatile Semiconductor Memory Device
Application:
10/505,952 →
Semiconductor Integrated Circuit
Application:
10/505,216 →
Nonvolatile Semiconductor Storage Unit
Application:
10/501,391 →
Nonvolatile Semiconductor Memory Device Capable of Realizing Optimized Erasing Operation in a Memory Array
Application:
10/499,667 →
High Frequency Power Amplifier Module and Semiconductor Integrated Circuit Device
Application:
10/862,325 →
Semiconductor Device
Application:
10/757,441 →
High Frequency Power Amplification Electric Part and Wireless Communication System
Application:
10/682,249 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
10/647,280 →
Electronic Device and Method of Manufacturing the Same
Application:
10/466,428 →
Semiconductor Device
Application:
10/319,511 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
10/303,841 →
Semiconductor Integrated Circuit Device
Application:
10/173,433 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
10/122,178 →
Semiconductor Device
Application:
10/067,902 →
Field Effect Transistor and Method of Fabricating the Same by Controlling Distribution Condition of Impurity Region with Implantation of Additional Ion
Application:
09/907,714 →
Semiconductor Integrated Circuit Device
Application:
09/830,416 →
Level Conversion Circuit and Semiconductor Integrated Circuit Device Employing the Level Conversion Circuit
Application:
09/833,627 →