IP Library Granted Patent US 6,566,219
Granted Patent Utility
US 6,566,219 · Confirmation No. 4784

METHOD OF FORMING A SELF ALIGNED TRENCH IN A SEMICONDUCTOR USING A PATTERNED SACRIFICIAL LAYER FOR DEFINING THE TRENCH OPENING

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Code Description Pages PDF
2002-01-29 TRNA Transmittal of New Application 1 View
2002-01-29 DRW Drawings-only black and white line drawings 23 View
2001-09-21 TRNA Transmittal of New Application 3 View
2001-09-21 SPEC Specification 14 View
2001-09-21 CLM Claims 3 View
2001-09-21 ABST Abstract 1 View
2001-09-21 DRW Drawings-only black and white line drawings 18 View
2001-09-21 OATH Oath or Declaration filed 4 View
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Quick Facts
Patent No.
US 6,566,219
App. No.
09/957,937
Filed
2001-09-21
Granted
2003-05-20
Pub. No.
US20020068400A1
Art Unit
2813
PTA
-46 days