IP Library › Granted Patent US 6,649,500
Granted Patent Utility
US 6,649,500 · Confirmation No. 4768

SEMICONDUCTOR DEVICE INCLUDING AN INSULATED GATE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Inventor: Hiroki Koga
Patented Case View Patent ↗ View Publication ↗
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 Code Description Pages PDF
2009-01-07 EBCC.AD Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update 1 View
2008-11-24 EBCC.AD Notice of Change of Address Place in File Wrapper Due to Electronic Business Center(EBC) Customer Number Update 1 View
2003-09-22 IFEE Issue Fee Payment (PTO-85B) 1 View
2001-11-13 TRNA Transmittal of New Application 1 View
2001-11-13 SPEC Specification 26 View
2001-11-13 CLM Claims 7 View
2001-11-13 ABST Abstract 1 View
2001-11-13 DRW Drawings-only black and white line drawings 11 View
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Quick Facts
Patent No.
US 6,649,500
App. No.
09/991,093
Filed
2001-11-13
Granted
2003-11-18
Pub. No.
US20020079492A1
Examiner
LE, THAO X
Art Unit
2814
PTA
-25 days