IP Library Granted Patent US 6,754,104
Granted Patent Utility
US 6,754,104 · Confirmation No. 2126

INSULATED-GATE FIELD-EFFECT TRANSISTOR INTEGRATED WITH NEGATIVE DIFFERENTIAL RESISTANCE (NDR) FET

Inventor: Tsu-Jae King
⬇ PDF
Code Description Pages PDF
2006-08-08 C.AD Change of Address 2 View
2006-08-08 N417 Electronic Filing System Acknowledgment Receipt 2 View
2004-04-19 IFEE Issue Fee Payment (PTO-85B) 1 View
2004-04-16 LET. Miscellaneous Incoming Letter 1 View
2004-04-16 DRW Drawings-only black and white line drawings 22 View
2001-12-21 TRNA Transmittal of New Application 2 View
2001-12-21 SPEC Specification 24 View
2001-12-21 CLM Claims 8 View
2001-12-21 ABST Abstract 1 View
2001-12-21 DRW Drawings-only black and white line drawings 22 View
2001-12-21 OATH Oath or Declaration filed 2 View
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Quick Facts
Patent No.
US 6,754,104
App. No.
10/028,084
Filed
2001-12-21
Granted
2004-06-22
Pub. No.
US20020048190A1
Art Unit
2824
PTA
-68 days