IP Library Assignment 018837/0769
Patent Assignment
Reel/Frame 018837/0769

Assignment of Assignor's Interest

Recorded: 2006-12-21 Pages: 7
Assignor
PROGRESSANT TECHNOLOGIES, INC.
Executed: 2006-12-18
Assignee
SYNOPSYS, INC.
700 E. MIDDLEFIELD ROAD, MOUNTAIN VIEW, CALIFORNIA, 94043
Covered Properties (63)
Negative Differential Resistance Field Effect Transistor (Ndr-Fet) & Circuits Using the Same
Memory Cell Utilizing Negative Differential Resistance Field-Effect Transistors
Negative Differential Resistance (Ndr) Element & Memory with Reduced Soft Error Rate
Enhanced Read & Write Methods for Negative Differential Resistance (Ndr) Based Memory Device
Adaptive Negative Differential Resistance Device
N-Channel Pull-Up Element & Logic Circuit
Variable Voltage Supply Bias and Methods for Negative Differential Resistance (Ndr) Based Memory Device
Cmos Compatible Process for Making a Tunable Negative Differential Resistance (Ndr) Device
Patent: 6,596,617 →
Application: 09/602,658 →
Cmos-Process Compatible, Tunable Ndr (Negative Differential Resistance) Device and Method of Operating Same
Patent: 6,512,274 →
Application: 09/603,101 →
Charge Trapping Device and Method for Implementing a Transistor Having a Negative Differential Resistance Mode
Patent: 6,479,862 →
Application: 09/603,102 →
Insulated-Gate Field-Effect Transistor Integrated with Negative Differential Resistance (Ndr) Fet
Patent: 6,754,104 →
Application: 10/028,084 →
Publication: US 2002/0048190
Negative Differential Resistance Field Effect Transistor (Ndr-Fet) & Circuits Using the Same
Patent: 6,559,470 →
Application: 10/028,085 →
Publication: US 2002/0066933
Charge Pump for Negative Differential Resistance Transistor
Patent: 6,594,193 →
Application: 10/028,089 →
Publication: US 2002/0067651
Dual Mode Fet & Logic Circuit Having Negative Differential Resistance Mode
Patent: 6,518,589 →
Application: 10/028,394 →
Publication: US 2002/0057123
Memory Cell Using Negative Differential Resistance Field Effect Transistors
Patent: 6,724,655 →
Application: 10/029,077 →
Publication: US 2002/0054502
Enhanced Read & Write Methods for Negative Differential Resistance (Ndr)Based Memory Device
Patent: 6,847,562 →
Application: 10/185,247 →
Publication: US 2004/0001363
Negative Differential Resistance (Ndr) Based Memory Device with Reduced Body Effects
Patent: 6,912,151 →
Application: 10/185,559 →
Publication: US 2004/0032770
Negative Differential Resistance (Ndr) Elements & Memory Device Using the Same
Patent: 6,795,337 →
Application: 10/185,568 →
Publication: US 2004/0001354
Negative Differential Resistance (Ndr) Element and Memory with Reduced Soft Error Rate
Patent: 6,567,292 →
Application: 10/185,569 →
Silicon on Insulator (Soi) Negative Differential Resistance (Ndr) Based Memory Device with Reduced Body Effects
Patent: 6,864,104 →
Application: 10/215,137 →
Publication: US 2004/0008535
Method for Making Both a Negative Differential Resistance (Ndr) Device and a Non-Ndr Device Using a Common Mos Process
Patent: 6,680,245 →
Application: 10/232,129 →
Charge Trapping Device and Method
Patent: 6,700,155 →
Application: 10/252,906 →
Negative Differential Resistance (Ndr) Element and Memory with Reduced Soft Error Rate
Patent: 6,727,548 →
Application: 10/298,700 →
Method of Orperating a Dual Mode Fet& Logic Circuit Having Negative Differential Resistance Mode
Patent: 6,664,601 →
Application: 10/298,726 →
Method for Fabricating a Dual Mode Fet & Logic Circuit Having Negative Differential Resistance Mode
Patent: 6,686,267 →
Application: 10/298,915 →
Field Effect Transistor Pull-Up/ Load Element
Patent: 6,724,024 →
Application: 10/298,916 →
Method for Configuring a Device to Include a Negative Differential Resistance (Ndr) Characteristic
Patent: 6,693,027 →
Application: 10/298,917 →
Charge Trapping Device & Method of Forming the Same
Patent: 6,849,483 →
Application: 10/314,510 →
Publication: US 2004/0110336
Method of Forming a Negative Differential Resistance Device
Patent: 6,980,467 →
Application: 10/314,735 →
Publication: US 2004/0110324
Process for Controlling Performance Characteristics of a Negative Differential Resistance (Ndr) Device
Patent: 6,979,580 →
Application: 10/314,785 →
Publication: US 2004/0110338
Negative Differential Resistance (Ndr) Device and Method of Operating Same
Patent: 6,686,631 →
Application: 10/315,741 →
Integrated Circuit Having Negative Differential Resistance (Ndr) Devices with Varied Peak-to-Valley Ratios (Pvrs)
Patent: 7,012,833 →
Application: 10/321,031 →
Publication: US 2004/0110332
Adaptive Negative Differential Resistance Device
Patent: 6,812,084 →
Application: 10/321,090 →
Publication: US 2004/0110337
Methods of Testing/Stressing a Charge Trapping Device
Patent: 6,806,117 →
Application: 10/322,080 →
Publication: US 2004/0110349
N-Channel Pull-Up Element & Logic Circuit
Patent: 7,005,711 →
Application: 10/324,485 →
Publication: US 2004/0119114
Charge Trapping Device
Patent: 7,067,873 →
Application: 10/753,948 →
Publication: US 2004/0145010
Cmos Compatible Process for Making a Charge Trapping Device
Patent: 7,109,078 →
Application: 10/754,229 →
Publication: US 2004/0142533
Variable Threshold Semiconductor Device and Method of Operating Same
Patent: 6,969,894 →
Application: 10/757,245 →
Publication: US 2004/0145023
Cmos Process Compatible, Tunable Negative Differential Resistance (Ndr) Device and Method of Operating Same
Patent: 6,972,465 →
Application: 10/760,090 →
Publication: US 2004/0150011
Negative Differential Resistance Pull Up Element
Patent: 6,894,327 →
Application: 10/827,713 →
Method of making memory cell utilizing negative differential resistance devices
Application: 10/827,787 →
Negative Differential Resistance Load Element
Patent: 6,933,548 →
Application: 10/827,886 →
Charge Trapping Pull Up Element
Patent: 6,956,262 →
Application: 10/828,356 →
Negative Differential Resistance (Ndr) Memory Device with Reduced Soft Error Rate
Patent: 6,853,035 →
Application: 10/831,867 →
Negative Differential Resistance (Ndr) Memory Cell with Reduced Soft Error Rate
Patent: 6,861,707 →
Application: 10/831,950 →
Insulated-Gate Field-Effect Transistor Integrated with Negative Differential Resistance (Ndr) Fet
Patent: 7,186,619 →
Application: 10/867,006 →
Publication: US 2004/0238855
Method of Making Memory Cell Utilizing Negative Differential Resistance Devices
Patent: 6,990,016 →
Application: 10/884,574 →
Publication: US 2004/0246764
Two Terminal Silicon Based Negative Differential Resistance Device
Patent: 7,016,224 →
Application: 10/884,576 →
Publication: US 2004/0246778
Methods of Testing/Stressing a Charge Trapping Device
Patent: 7,060,524 →
Application: 10/966,575 →
Publication: US 2005/0106765
Method of Making Adaptive Negative Differential Resistance Device
Patent: 7,254,050 →
Application: 10/979,469 →
Publication: US 2005/0064645
Process for Controlling Performance Characteristics of a Negative Differential Resistance (Ndr) Device
Patent: 7,220,636 →
Application: 10/982,425 →
Publication: US 2005/0153461
Charge Trapping Device and Method of Forming the Same
Patent: 7,015,536 →
Application: 10/983,312 →
Publication: US 2005/0156158
Enhanced Read and Write Methods for Negative Differential Resistance (Ndr) Based Memory Device
Patent: 7,012,842 →
Application: 11/010,132 →
Publication: US 2005/0128797
Negative differential resistance (NDR) memory device with reduced soft error rate
Application: 11/027,093 →
Publication: US 2005/0145955
Silicon on Insulator (Soi) Negative Differential Resistance (Ndr) Based Memory Device with Reduced Body Effects
Patent: 7,187,028 →
Application: 11/035,786 →
Publication: US 2005/0121664
Method of Forming a Negative Differential Resistance Device
Patent: 7,113,423 →
Application: 11/045,535 →
Publication: US 2005/0253133
Method of Forming a Negative Differential Resistance Device
Patent: 7,186,621 →
Application: 11/045,539 →
Publication: US 2005/0260798
Negative Differential Resistance Field Effect Transistor for Implementing a Pull Up Element in a Memory Cell
Patent: 7,453,083 →
Application: 11/198,955 →
Publication: US 2005/0269628
Negative Differential Resistance (Ndr) Elements and Memory Device Using the Same
Patent: 7,098,472 →
Application: 11/229,182 →
Publication: US 2006/0007773
Variable Voltage Supply Bias and Methods for Negative Differential Resistance (Ndr) Based Memory Device
Patent: 7,095,659 →
Application: 11/243,346 →
Publication: US 2006/0028881
Compact Static Memory Cell with Non-Volatile Storage Capability
Patent: 7,266,010 →
Application: 11/288,883 →
Publication: US 2007/0121371
Stacked memory cell utilizing negative differential resistance devices
Application: 11/345,248 →
Publication: US 2006/0125017
Charge Trapping Device
Application: 11/382,474 →
Publication: US 2006/0197122
Related Assignments (1)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Aug 2, 2004
From: KING, TSU-JAE; LIU, DAVID K.Y.
To: PROGRESSANT TECHNOLOGIES, INC.
Reel/Frame 014926/0849 →