Granted Patent
Utility
US 6,614,069
· Confirmation No. 5359
NONVOLATILE SEMICONDUCTOR MEMORY CELL AND METHOD FOR FABRICATING THE MEMORY CELL
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⬇ PDF
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Code | Description | Pages | ||
|---|---|---|---|---|---|
| 2003-06-30 | IFEE |
Issue Fee Payment (PTO-85B) | 1 | View | |
| 2002-01-22 | TRNA |
Transmittal of New Application | 1 | View | |
| 2002-01-22 | SPEC |
Specification | 22 | View | |
| 2002-01-22 | CLM |
Claims | 6 | View | |
| 2002-01-22 | ABST |
Abstract | 1 | View | |
| 2002-01-22 | DRW |
Drawings-only black and white line drawings | 4 | View | |
| 2002-01-22 | OATH |
Oath or Declaration filed | 3 | View |
Inventors
Wolfgang Rosner
Ottobrunn, GERMANY
Thomas Schulz
Munchen, GERMANY
Lothar Risch
Neubiberg, GERMANY
Ties Ramcke
Munchen, GERMANY
Attorneys & Agents of Record
Classification
USPC
257/315
H10D64/035
B82Y10/00
H10D30/688
H10D30/687
Prosecution
- Examiner
- NGUYEN, DAO H
- Art Unit
- 2818
- Docket No.
- L&L-I0205
- Confirmation No.
- 5359
Foreign Priority
199 33 958.9
·
1999-07-20
·
GERMANY
Publication
- Pub. No.
- US20020125525A1
- Pub. Date
- 2002-09-12
Patent Term Adjustment
-9days
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2015-08-19
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded 2003-07-03
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Quick Facts
- Patent No.
- US 6,614,069
- App. No.
- 10/054,440
- Filed
- 2002-01-22
- Granted
- 2003-09-02
- Pub. No.
- US20020125525A1
- Examiner
- NGUYEN, DAO H
- Art Unit
- 2818
- PTA
- -9 days
External Links