Method of forming lattice-matched structure on silicon and structure formed thereby
View Patent ↗A method (and resultant structure) of forming a semiconductor structure, includes processing an oxide to have a crystalline arrangement, and depositing an amorphous semiconductor layer on the oxide by one of evaporation and chemical vapor deposition (CVD).
1. A semiconductor structure, comprising:
a substrate;
a crystalline oxide layer comprising single-crystal oxide formed over said substrate; and
a smooth epitaxial silicon layer comprising single-crystal silicon formed on said crystalline oxide layer,
wherein a lattice constant of said crystalline oxide is substantially a multiple of a lattice constant of silicon.
2. The structure of claim 1 , further comprising:
a silicon oxide layer formed between said substrate and said crystalline oxide layer.
3. The structure of claim 1 , wherein the crystalline oxide layer comprises an oxide of at least one of the rare earth elements.
4. The structure of claim 1 , wherein the crystalline oxide layer comprises an oxide of yttrium.
5. The structure of claim 1 , wherein the crystalline oxide layer comprises a mixture of oxides of different rare earth elements and yttrium.
6. The structure of claim 1 , further comprising:
at least one additional layer of crystalline oxide formed on said epitaxial silicon layer; and
at least one additional layer of silicon formed on said additional layer of crystalline oxide.
7. The structure of claim 1 , wherein said substrate comprises a silicon substrate.
8. The structure of claim 1 , wherein said crystalline oxide layer is formed directly on said substrate.
9. The structure of claim 1 , wherein said crystalline oxide layer comprises an epitaxial oxide layer.
10. The structure of claim 1 , wherein said crystalline oxide layer comprises a mixture of oxides of different rare earth elements.
11. The structure of claim 1 , wherein said oxide layer crystallizes to have a bixbyite structure.
12. The structure of claim 1 , wherein said crystalline oxide layer is perfectly lattice-matched to silicon.
13. The structure of claim 1 , wherein said epitaxial silicon layer comprises a thickness in a range from 0.5 nm to 1 μm.
14. The structure of claim 1 , wherein said crystalline oxide layer comprises (La,Y) 2 O 3 .
15. A semiconductor structure, comprising:
a substrate;
a crystalline oxide layer comprising single-crystal oxide formed over said substrate; and
a smooth epitaxial germanium layer comprising single-crystal germanium formed on said crystalline oxide layer,
wherein a lattice constant of said crystalline oxide is substantially a multiple of a lattice constant of silicon.
16. The structure of claim 15 , further comprising:
a silicon oxide layer formed between said substrate and said crystalline oxide layer.
17. The structure of claim 15 , wherein the crystalline oxide layer comprises an oxide of at least one of the rare earth elements.
18. The structure of claim 15 , wherein the crystalline oxide layer comprises an oxide of yttrium.
19. The structure of claim 15 , wherein the crystalline oxide layer comprises a mixture of oxides of different rare earth elements and yttrium.
20. The structure of claim 15 , further comprising:
at least one additional layer of crystalline oxide formed on said epitaxial germanium layer; and
at least one additional layer of germanium formed on said additional layer of crystalline oxide.
21. The structure of claim 15 , wherein said substrate comprises a silicon substrate.
22. The structure of claim 15 , wherein said crystalline oxide layer is formed directly on said substrate.
23. The structure of claim 15 , wherein said crystalline oxide layer comprises an epitaxial oxide layer.
24. The structure of claim 15 , wherein said crystalline oxide layer comprises a mixture of oxides of different rare earth elements.
25. The structure of claim 15 , wherein said oxide layer crystallizes to have a bixbyite structure.
26. A semiconductor structure, including:
a crystalline oxide surface comprising a single-crystal oxide surface; and
an amorphous layer of at least one of silicon, germanium, gallium arsenide, aluminum arsenide, indium phosphide, aluminum antimonide, indium arsenide, gallium phosphide and mixed alloys thereof, deposited on said crystalline oxide surfare by evaporation or chemical vapor deposition,
wherein said amorphous layer is deposited in the presence of a surfactant vapor, such that said amorphous layer forms a smooth epitaxial silicon layer when annealed, and
wherein a lattice constant of said crystalline oxide is substantially a multiple of a lattice constant of silicon.
27. The structure of claim 26 , further comprising:
a silicon substrate, said crystalline oxide surface being formed directly on said silicon substrate.
28. The structure of claim 26 , wherein said crystalline oxide surface comprises an epitaxial oxide surface.
29. The structure of claim 26 , wherein said crystalline oxide surface comprises a surface of a mixture of oxides of different rare earth elements.
30. The structure of claim 26 , wherein said crystalline oxide surface crystallizes to have a bixbyite structure.
31. The structure of claim 26 , wherein said crystalline oxide surface is perfectly lattice-matched to silicon.