IP Library › Granted Patent US 6,777,773
Granted Patent Utility
US 6,777,773 · Confirmation No. 5697

MEMORY CELL WITH ANTIFUSE LAYER FORMED AT DIODE JUNCTION

Inventor: N. Johan Knall
Patented Case View Patent ↗ View Publication ↗
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 Code Description Pages PDF
2004-05-13 IFEE Issue Fee Payment (PTO-85B) 2 View
2003-08-18 A... Amendment/Request for Reconsideration-After Non-Final Rejection 1 View
2003-08-18 SPEC Specification 1 View
2003-08-18 CLM Claims 2 View
2003-08-18 REM Applicant Arguments/Remarks Made in an Amendment 4 View
2003-08-18 XT/ Extension of Time 1 View
2003-08-18 IDS Information Disclosure Statement (IDS) Form (SB08) 3 View
2002-06-27 TRNA Transmittal of New Application 5 View
2002-06-27 SPEC Specification 10 View
2002-06-27 CLM Claims 3 View
2002-06-27 ABST Abstract 1 View
2002-06-27 DRW Drawings-only black and white line drawings 2 View
2002-06-27 OATH Oath or Declaration filed 5 View
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Quick Facts
Patent No.
US 6,777,773
App. No.
10/186,359
Filed
2002-06-27
Granted
2004-08-17
Pub. No.
US20030021142A1
Art Unit
2818
PTA
-183 days