High sensitivity sensor for tagged magnetic bead bioassays
View Patent ↗The preferred embodiments of the present invention use MRAM technology to detect a shift in the magnetic switching field of a sensor. The shift in the magnetic switching field is caused by the presence of magnetic tagged beads. By measuring the magnitude of the shift in the magnetic field and correlating the magnitude of the shift to the presence of the target molecules, accurate measurements regarding the presence of the target molecules can be made.
1. A method of detecting at least one target molecule using a magnetoresistive random access memory (MRAM) element, wherein the MRAM element may be in a first state or a second state, comprising the steps of:
monitoring at least one switching point in time from the first state to the second state, in response to the application of a switching current signal to the MRAM element;
attaching at least one magnetic bead to a magnetoresistive sensor incorporating said MRAM element;
detecting a shift in the at least one switching point in time from the first state to the second state; and
using said shift to identify the presence of at least one target molecule, said target molecule being attached to said at least one magnetic bead.
2. The method of claim 1 , wherein the switching current signal is pulsed at a predetermined frequency.
3. The method of claim 1 , wherein the switching current signal is provided to a plurality of programming conductors associated with the MRAM element.
4. The method of claim 3 , wherein the plurality of programming conductors are current lines that produce a magnetic switching field for switching the MRAM element from the first state to the second state.
5. The method of claim 1 , wherein said step of detecting the at least one target module further comprises the steps of:
calculating a first differential between the at least one switching point in time and a second switching point in time; and
calculating a second differential between a third switching point in time and a fourth switching point in time.
6. The method of claim 1 further comprising modulating said switching current signal using amplitude modulation.
7. The method of claim 1 further comprising the step of shielding said MRAM element from at least one external magnetic field.
8. A method of detecting at least one target molecule using a magnetoresistive random access memory (MRAM) element, wherein the MRAM element may be in a first state or a second state, comprising the steps of:
monitoring at least one switching point in time from the first state to the second state, in response to the application of a switching current signal to the MRAM element, wherein the switching signal has a predetermined frequency;
attaching at least one magnetic bead to a magnetoresistive sensor incorporating said MRAM element;
detecting a shift in the at least one switching point in time from the first state to the second state; and
using said shift to identify the presence of at least one target molecule, said target molecule being attached to said at least one magnetic bead.
9. The method of claim 8 , wherein the switching current signal is provided to a plurality of programming conductors associated with the MRAM element.
10. The method of claim 9 , wherein the plurality of programming conductors are current lines that produce a magnetic switching field for switching the MRAM element from the first state to the second state.
11. The method of claim 8 , wherein said step of detecting the at least one target module further comprises the steps of:
calculating a first differential between the at least one switching point in time and a second switching point in time; and
calculating a second differential between a third switching point in time and a fourth switching point in time.
12. The method of claim 8 further comprising modulating said switching current signal using amplitude modulation.
13. The method of claim 8 further comprising the step of shielding said MRAM element from at least one external magnetic field.
14. A method of detecting at least one target molecule using a magnetoresistive random access memory (MRAM) element, wherein the MRAM element may be in a first state or a second state, comprising the steps of:
monitoring at least one switching point in time from the first state to the second state, in response to the application of a switching current signal to the MRAM element;
attaching at least one magnetic bead to a magnetoresistive sensor incorporating said MRAM element;
detecting a shift in the at least one switching point in time from the first state to the second state;
using said shift to identify the presence of at least one target molecule, said target molecule being attached to said at least one magnetic bead; and
performing signal averaging to increase the signal-to-noise ratio.
15. The method of claim 14 , wherein the switching current signal is pulsed at a predetermined frequency.
16. The method of claim 14 , wherein the switching current signal is provided to a plurality of programming conductors associated with the MRAM element.
17. The method of claim 16 , wherein the plurality of programming conductors are current lines that produce a magnetic switching field for switching the MRAM element from the first state to the second state.
18. The method of claim 14 , wherein said step of detecting the at least one target module farther comprises the steps of:
calculating a first differential between the at least one switching point in time and a second switching point in time; and
calculating a second differential between a third switching point in time and a fourth switching point in time.
19. The method of claim 14 further comprising modulating said switching current signal using amplitude modulation.