Photosensitive formulation for buffer coatings, film containing the photosensitive formulation, and method for fabricating electronics with the photosensitive formulation
View Patent ↗A photosensitive formulation for high-temperature-resistant photoresists is based on polyhydroxyamides. The photosensitive formulations display a much higher photosensitivity than the comparable formulations based on quinone azide photoactive components. After conversion to the polybenzoxazole, the novel formulations also display a lower dielectric constant than the quinone azide-based formulations. A film can be made by applying the photosensitive formulation to a wafer and then evaporating the solvent. A method for fabricating electronics and micorelectronics structures a wafer by using the film in photolithography.
1. A photosensitive formulation comprising:
a poly-o-hydroxyamide containing free hydroxyl groups;
a dissolution inhibitor containing polar groups blocked with acid-labile groups, said dissolution inhibitor being insoluble in polar solvents before said acid-labile groups have been eliminated and being soluble in polar solvents after said acid-labile groups have been liberated;
a photoacid; and
a solvent.
2. The photosensitive formulation as claimed in claim 1 , wherein said poly-o-hydroxyamide has a formula
where
A 1 and A 2 are substituents selected from the group consisting of:
—H, —CO—(CH 2 ) n —CH 3 , —CO—(CF 2 ) n —CF 3 , —CO—CH═CH—COOH, where n=0 to 10;
where W is a substituent selected from the group consisting of —H, —F, —CN, —C(CH 3 ) 3 , —(CH 2 ) n —CH 3 , —(CF 2 ) n —CF 3 , —O—(CH 2 ) n —CH 3 , —O—(CF 2 ) n —CF 3 , —CH═CH 2 , —C≡CH, and
where n=0 to 10; and
if A 2 is attached to at least one of —CO— and C=0, A 2 is an OH group;
X 1 and X 2 , independently of one another, are substituents selected from the group consisting of:
Z is a substituent selected from the group consisting of: —O—, —CO—, —S—, —S—S—, —SO 2 —, —(CH 2 ) m —, —(CF 2 ) m — where m=1 to 10; —C(CR 6 3 ) 2 — where R 6 , independently of one another, is a hydrocarbon radical having between 1 and 2 carbon atoms;
Y 1 and Y 2 , independently of one another, are substituents selected from the group consisting of:
where R 7 is a substituent selected from the group consisting of —H, —CN, —C(CH 3 ) 3 , —C(CF 3 ) 3 , —(CH 2 ) n —CH 3 , —(CF 2 ) n —CF 3 , —O—(CH 2 ) n —CH 3 , —O—(CF 2 ) n —CF 3 , —C≡CH, —CH═CH 2 , —O—CH═CH 2 , —O—CH 2 —CH═CH 2 , —CO—(CH 2 ) n —CH 3 , —CO—(CF 2 ) n —CF 3 , where n=0 to 10; and
Z is a substituent selected from the group consisting of: —O—, —CO—, —S—, —S—S—, —SO 2 —, —(CH 2 ) m —, —(CF 2 ) m — where m=1 to 10; —C(CR 6 3 ) 2 — where R 6 , independently of one another, is a hydrocarbon radical having between 1 and 2 carbon atoms;
a is an integer from 1 to 100; b is an integer from 0 to 100; and c is an integer from 0 to 1.
3. The photosensitive formulation according to claim 2 , wherein A 1 and A 2 are identical.
4. The photosensitive formulation according to claim 2 , wherein A 1 and A 2 are different.
5. The photosensitive formulation according to claim 2 , wherein R 6 includes substituents selected from the group consisting of fluorine, hydrogen, a halide, and a pseudohalide.
6. The formulation according to claim 1 , further comprising additives selected from the group consisting of a sensitizer, a photobase, an adhesion promoter, a defoamer, and a surface-active substance.
7. The formulation according to claim 1 , wherein:
a concentration of said poly-o-hydroxyamide in said solvent is between 5 and 40% by weight;
a concentration of at least one of said photoacid and said sensitizer is between 0.05 and 5% by weight; and
a concentration of said dissolution inhibitor is between 1 and 10% by weight.
8. The formulation according to claim 1 , wherein:
said dissolution inhibitor is in monomeric form; and
said polar groups are selected from the group consisting of hydroxyl and carboxyl groups, said polar groups being blocked with said acid-labile groups.
9. The formulation according to claim 1 , wherein:
said dissolution inhibitor is in polymeric form; and
said polar groups are selected from the group consisting of hydroxyl and carboxyl groups, said polar groups being blocked with said acid-labile groups.
10. The photosensitive formulation according to claim 1 , wherein said dissolution inhibitor is selected from the group consisting of homopolymers and copolymers with tert-butyl acrylate, homopolymers and copolymers with tert-butyl methacrylate, homopolymers and copolymers with tert-butoxycarbonyloxystyrene, homopolymers and copolymers with tert-butylcinnamic acid, acetals, ketals, homoacetals, copolyacetals, polyketals, homopolycarbonates, copolycarbonates, and additionally:
where Z is a substituent selected from the group consisting of: —O—, —CO—, —S—, —S—S—, —SO 2 —, —(CH 2 ) m —, —(CF 2 ) m — where m=1 to 10; —C(CR 6 3 ) 2 — where R 6 , independently of one another, is a hydrocarbon radical having between 1 and 2 carbon atoms;
L 1 and L 2 , independently of one another, are substituents selected from the group consisting of —H and
where R 3 , R 4 , and R 5 are substituents selected from the group consisting of —H, —F, —(CH 2 ) n —CH 3 , —(CF 2 ) n —CF 3 , where at least one radical of R 3 , R 4 , and R 5 is other than hydrogen, particular preference being given to tert-butoxy-carbonyl groups in which the radicals R 3 , R 4 , and R 5 are formed by —(CH 2 ) n —CH 3 , especially —CH 3 , where n=0 to 10;
L 3 is a substituent selected from the group consisting of —H, —CN, —OH, —COOH, —Cl, —F, —C(CH 3 ) 3 , —C(CF 3 ) 3 , —(CH 2 ) n —CH 3 , —(CF 2 ) n —CF 3 , —O—(CH 2 ) n —CH 3 , —O—(CF 2 ) n —CF 3 , —C≡CH, —CH═CH 2 , and —O—CH═CH 2 , —O—CH 2 —CH═CH 2 , —CO—(CH 2 ) n —CH 3 , —CO—(CF 2 ) n —CF 3 , —CO—CH═CH—COOH, where n=0 to 10.
11. The photosensitive formulation according to claim 2 , wherein R 6 includes substituents selected from the group consisting of fluorine, hydrogen, a halide, and a pseudohalide.
12. A film, comprising a photosensitive formulation including:
a poly-o-hydroxyamide containing free hydroxyl groups;
a dissolution inhibitor containing polar groups blocked with acid-labile groups, said dissolution inhibitor being insoluble in polar solvents before said acid-labile groups have been eliminated and being soluble in polar solvents after said acid-labile groups have been liberated;
a photoacid; and
a solvent.
13. The film according to claim 12 , wherein said solvent has been evaporated.
14. A method for forming microelectronics, which comprises applying to a wafer a photosensitive formulation including:
a poly-o-hydroxyamide containing free hydroxyl groups;
a dissolution inhibitor containing polar groups blocked with acid-labile groups, said dissolution inhibitor being insoluble in polar solvents before said acid-labile groups have been eliminated and being soluble in polar solvents after said acid-labile groups have been liberated;
a photoacid; and
a solvent.
15. The method according to claim 14 , which further comprises evaporating the solvent to form a film on the wafer.
16. The method according to claim 15 , which further comprises at least partly exposing the film with light to activate the photoacid.
17. The method according to claim 16 , which further comprises liberating the acid-labile groups with the activated photoacid.
18. The method according to claim 17 , which further comprises dissolving the exposed film with a polar solvent.