IP Library Granted Patent US 7,384,582
Granted Patent B2
US 7,384,582 · App. 10/296,724 · Granted Jun 10, 2008

Mold cleaning sheet and method for producing semiconductor devices using the same

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Quick Facts
Patent No.
US 7,384,582
App. No.
10/296,724
Granted
Jun 10, 2008
Kind
B2
Abstract

A cleaning sheet ( 29 ) is formed with a trough-hole ( 29 a ) at a portion corresponding to a cavity of a mold along with a slit ( 29 b ) or a flow cavity cut ( 29 c ) at every corner at an outer periphery of the through-hole ( 29 a ) and is placed between a first mold half and a second mold half of the mold to clean the inside of the mold, thereby improving the cleaning effect of the mold.

Claims (102)

1. A method of manufacturing a semiconductor device comprising the steps of:

(a) providing a first mold having a main surface and having a first concaved portion provided thereon, and a second mold having a main surface and having a second concaved portion provided thereon;

(b) providing a resin containing plural particles;

(c) providing a sheet made of a material that can be impregnated and permeated by the resin, and having a through hole forming a shape which is substantially identical to a shape of the second concaved portion of the second mold;

(d) opposing and contacting the main surface of the first mold and the main surface of the second mold to each other, and disposing the sheet between the main surface of the first mold and the main surface of the second mold to position the through hole so as to be aligned with the second concaved portion;

(e) after the step (d), injecting the resin to an inside of the first concaved portion;

(f) after the step (e), removing the sheet on the main surface of the first mold and the second mold and the resin;

(g) after the step (f), opposing and contacting the main surface of the first mold and the main surface of the second mold to each other, and disposing a semiconductor chip to the inside of the first concaved portion; and

(h) after the step (g), filling an encapsulating resin to the inside of the first concaved portion thereby encapsulating the semiconductor chip,

wherein the sheet has a slit;

wherein the slit is formed in a part corresponding to an air vent of the first mold; and

wherein in the step of (e), flowing the resin into the air vent through the slit.

2. A method of manufacturing a semiconductor device according to claim 1 , wherein the sheet is a non-woven fabric, paper or net-like material.

3. A method of manufacturing a semiconductor device according to claim 1 , wherein the sheet is formed with plural openings over an entire surface of the sheet, each opening having a diameter larger than that of the particles of the resin.

4. A method of manufacturing a semiconductor device according to claim 1 , wherein the second mold has a second concaved portion on the main surface and the step (e) comprises a step of disposing a resin containing the plural particles to the inside of the second concaved portion and a step of applying heat and pressure to the resin and charging the same to the inside of the openings.

5. A method of manufacturing a semiconductor device according to claim 1 , wherein the particles are formed of silica.

6. A method of manufacturing a semiconductor device according to claim 1 , wherein the resin portion is a melamine resin.

7. A method of manufacturing a semiconductor device according to claim 1 , wherein the method further comprises, before the step (d), the step of:

(i) opposing and contacting the main surface of the first mold and the main surface of the second mold and disposing a semiconductor chip to an inside of the opening surrounded with the main surface of the first mold and the first concaved portion; and

(j) after the step (i), filling an encapsulating resin to the inside of the opening surrounded with the main surface of the first mold and the first concaved portion and encapsulating the semiconductor chip.

8. A method of manufacturing a semiconductor device comprising the steps of:

(a) providing a mold having an upper mold and a lower mold opposing to the upper mold, the upper and lower molds each having a concaved portion defining a cavity for molding a semiconductor chip;

(b) providing a cleaning sheet for the mold, the cleaning sheet having a through hole, the through hole having a rectangular shape generally corresponding to a shape of the cavity in a plan view;

(c) setting the cleaning sheet on the mold such that the cleaning sheet is disposed between the upper and lower molds and the through hole of the cleaning sheet is disposed at the cavity;

(d) clamping the cleaning sheet between the upper and lower molds;

(e) injecting a cleaning resin for the mold in the cavity such that a portion of the cleaning resin is bonded to a portion of the cleaning sheet;

(f) after the step (e), removing the cleaning sheet with the cleaning resin from the mold;

(g) after the step (f), disposing a lead frame with the semiconductor chip at the mold such that the semiconductor chip is disposed in the cavity; and

(h) after the step (g), injecting an encapsulating resin in the cavity, to seal the semiconductor chip.

9. A method of manufacturing a semiconductor device according to claim 8 , wherein in the step (e) is performed by injecting the cleaning resin including plural particles.

10. A method of manufacturing a semiconductor device according to claim 8 , wherein in the step (e), the cleaning resin is bonded by impregnating a portion of the cleaning resin into the portion of cleaning sheet.

11. A method of manufacturing a semiconductor device according to claim 10 , wherein the cleaning resin is hardened before the step (f).

12. A method of manufacturing a semiconductor device according to claim 8 , wherein the lower mold has a pot portions and a gate portion;

wherein in the step (c), the cleaning resin is set in the pot portions; and

wherein in the step (e), the cleaning resin is injected in the cavity through the gate portions.

13. A method of manufacturing a semiconductor device according to claim 8 , wherein the steps from (b) to (f) are performed again after the steps from (g) to (h) are performed several times.

14. A method of manufacturing a semiconductor device according to claim 8 , wherein the upper and lower molds each have a parting surface opposing to each other;

wherein in the step (d), the cleaning sheet is clamped with the parting surface of the upper and lower molds.

15. A method of manufacturing a semiconductor device according to claim 8 , wherein the through hole has a square shape.

16. A method of manufacturing a semiconductor device comprising the steps of:

(a) providing a mold having an upper mold and a lower mold opposing to the upper mold, the upper and lower molds each having a first concaved portion defining a cavity for molding a semiconductor chip, and having a second concaved portion defining an air vent for removing an air in the cavity;

(b) providing a cleaning sheet for the mold, the cleaning sheet having a through hole and a slit, the through hole having a rectangular shape;

(c) setting the cleaning sheet on the mold such that the cleaning sheet is disposed between the upper and lower molds and the through hole of the cleaning sheet is disposed at the cavity and the slit of the cleaning sheet is disposed at the air vent, wherein one side of the through hole is positioned along one side of the cavity;

(d) clamping the cleaning sheet by the upper and lower molds;

(e) injecting a cleaning resin for the mold in the cavity such that a portion of the cleaning resin is bonded to a portion of the cleaning sheet;

(f) after the step (e), removing the cleaning sheet with the cleaning resin from the mold;

(g) after the step (f), disposing a lead frame with the semiconductor chip at the mold such that the semiconductor chip is disposed in the cavity; and

(h) after the step (g), injecting an encapsulating resin in the cavity, to seal the semiconductor chip.

17. A method of manufacturing a semiconductor device according to claim 16 , wherein the step (e) is performed by injecting the cleaning resin including plural particles.

18. A method of manufacturing a semiconductor device according to claim 16 , wherein in the step (e), the cleaning resin is bonded by impregnating a portion of the cleaning resin into the portion of cleaning sheet.

19. A method of manufacturing a semiconductor device according to claim 18 , wherein the cleaning resin is hardened before the step (f).

20. A method of manufacturing a semiconductor device according to claim 16 , wherein the lower mold has a pot portions and a gate portion;

wherein in the step (c), the cleaning resin is set in the pot portions; and

wherein in the step (e), the cleaning resin is injected in the cavity through the gate portions.

21. A method of manufacturing a semiconductor device according to claim 16 , wherein the steps from (b) to (f) are performed again after the steps from (g) to (h) are performed several times.

22. A method of manufacturing a semiconductor device according to claim 16 , wherein the upper and lower molds each has a third concaved portion defining a flow cavity for ensuring the well-balanced filling of the encapsulating resin;

wherein in the step (c), the cleaning sheet is set on the mold such that the slit of the cleaning sheet is disposed at the flow cavity.

23. A method of manufacturing a semiconductor device according to claim 16 , wherein the upper and lower molds each have a parting surface opposing to each other;

wherein in the step (d), the cleaning sheet is clamped with the parting surface of the upper and lower molds.

24. A method of manufacturing a semiconductor device according to claim 16 , wherein the through hole has a square shape.

25. A method of manufacturing a semiconductor device comprising the steps of:

(a) providing a mold having an upper mold and a lower mold opposing to the upper mold, the upper and lower molds each having a concaved portion defining a cavity for molding a semiconductor chip;

(b) providing a cleaning sheet for the mold, the cleaning sheet having a through hole, the through hole having a rectangular shape and having sides generally parallel to corresponding sides of the cavity in a plan view;

(c) setting the cleaning sheet on the mold such that the cleaning sheet is disposed between the upper and lower molds and the through hole of the cleaning sheet is disposed at the cavity;

(d) clamping the cleaning sheet between the upper and lower molds;

(e) injecting a cleaning resin for the mold in the cavity such that a portion of the cleaning resin is bonded to a portion of the cleaning sheet;

(f) after the step (e), removing the cleaning sheet with the cleaning resin from the mold;

(g) after the step (f), disposing a lead frame with the semiconductor chip at the mold such that the semiconductor chip is disposed in the cavity; and

(h) after the step (g), injecting an encapsulating resin in the cavity, to seal the semiconductor chip.

26. A method of manufacturing a semiconductor device according to claim 25 , wherein the step (e) is performed by injecting the cleaning resin including plural particles.

27. A method of manufacturing a semiconductor device according to claim 25 , wherein in the step (e), the cleaning resin is bonded by impregnating a portion of the cleaning resin into the portion of cleaning sheet.

28. A method of manufacturing a semiconductor device according to claim 27 , wherein the cleaning resin is hardened before the step (f).

29. A method of manufacturing a semiconductor device according to claim 25 , wherein the lower mold has a pot portions and a gate portion;

wherein in the step (c), the cleaning resin is set in the pot portions; and

wherein in the step (e), the cleaning resin is injected in the cavity through the gate portions.

30. A method of manufacturing a semiconductor device according to claim 25 , wherein the steps from (b) to (f) are performed again after the steps from (g) to (h) are performed several times.

31. A method of manufacturing a semiconductor device according to claim 25 , wherein the upper and lower molds each has a third concaved portion defining a flow cavity for ensuring the well-balanced filling of the encapsulating resin;

wherein in the step (c), the cleaning sheet is set on the mold such that the slit of the cleaning sheet is disposed at the flow cavity.

32. A method of manufacturing a semiconductor device according to claim 25 , wherein the upper and lower molds each have a parting surface opposing to each other;

wherein in the step (d), the cleaning sheet is clamped with the parting surface of the upper and lower molds.

33. A method of manufacturing a semiconductor device according to claim 25 , wherein the through hole has a square shape.

34. A method of manufacturing a semiconductor device comprising the steps of:

(a) providing a mold having an upper mold and a lower mold opposing to the upper mold, the upper and lower molds each having concaved portions defining cavities for molding a semiconductor chip;

(b) providing a cleaning sheet for the mold, the cleaning sheet having a plurality of through holes, wherein each through hole has a rectangular shape;

(c) setting the cleaning sheet on the mold such that the cleaning sheet is disposed between the upper and lower molds and the plurality of through holes of the cleaning sheet are disposed at corresponding cavities, wherein a single through hole of the cleaning sheet is positioned at each cavity;

(d) clamping the cleaning sheet by the upper and lower molds;

(e) injecting a cleaning resin for the mold in the cavity such that a portion of the cleaning resin is bonded to a portion of the cleaning sheet;

(f) after the step (e), removing the cleaning sheet with the cleaning resin from the mold;

(g) after the step (f), disposing a lead frame with the semiconductor chip at the mold such that the semiconductor chip is disposed in the cavity; and

(h) after the step (g), injecting an encapsulating resin in the cavity, to seal the semiconductor chip.

35. A method of manufacturing a semiconductor device according to claim 34 , wherein the step (e) is performed by injecting the cleaning resin including plural particles.

36. A method of manufacturing a semiconductor device according to claim 34 , wherein in the step (e), the cleaning resin is bonded by impregnating a portion of the cleaning resin into the portion of cleaning sheet.

37. A method of manufacturing a semiconductor device according to claim 36 , wherein the cleaning resin is hardened before the step (f).

38. A method of manufacturing a semiconductor device according to claim 34 , wherein the lower mold has a pot portions and a gate portion;

wherein in the step (c), the cleaning resin is set in the pot portions; and

wherein in the step (e), the cleaning resin is injected in the cavity through the gate portions.

39. A method of manufacturing a semiconductor device according to claim 34 , wherein the steps from (b) to (f) are performed again after the steps from (g) to (h) are performed several times.

40. A method of manufacturing a semiconductor device according to claim 34 , wherein the upper and lower molds each has a third concaved portion defining a flow cavity for ensuring the well-balanced filling of the encapsulating resin;

wherein in the step (c), the cleaning sheet is set on the mold such that the slit of the cleaning sheet is disposed at the flow cavity.

41. A method of manufacturing a semiconductor device according to claim 34 , wherein the upper and lower molds each have a parting surface opposing to each other;

wherein in the step (d), the cleaning sheet is clamped with the parting surface of the upper and lower molds.

42. A method of manufacturing a semiconductor device according to claim 34 , wherein the through hole has a square shape.

Assignments (8)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded May 12, 2017
From: RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
To: RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.
Reel/Frame 042484/0880 →
MERGER Recorded May 12, 2017
From: HITACHI YONEZAWA ELECTRONICS CO., LTD.
To: NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
Reel/Frame 042595/0189 →
MERGER Recorded May 12, 2017
From: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
Reel/Frame 042609/0807 →
CHANGE OF NAME Recorded May 12, 2017
From: NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
To: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
Reel/Frame 042458/0022 →
MERGER AND CHANGE OF NAME Recorded Jul 29, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024755/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2003
From: HITACHI, LTD.
To: RENESAS TECHNOLOGY CORPORATION
Reel/Frame 014598/0235 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2003
From: TSUCHIDA, KIYOSHI
To: HITACHI, LTD.; HITACHI YONEZAWA ELECTRONICS CO., LTD.
Reel/Frame 014522/0155 →