Process for chemically mechanically polishing wafers
View Patent ↗The invention relates to a process for chemically mechanically polishing and grinding wafers. The CMP slurry that is used for grinding is analyzed using slurry atomic absorption spectroscopy. This allows rapid and sensitive analysis of the slurry constituents, in particular of interfering ions. The process can be automated and makes it possible to process wafers with a constant quality. Furthermore, rapid fault analysis or optimization of the process parameters used during the grinding is possible.
1. A process for chemically mechanically polishing wafers, which comprises:
providing a CMP slurry having a solvent and at least one component being an interfering ion selected from the group consisting of inorganic salts and ceramic abrasives;
defining a range of values for a level of the component in the CMP slurry;
taking a slurry sample from the CMP slurry;
with an electrothermal absorption spectrometer, performing electrothermal slurry atomic absorption spectrometry to obtain a determined level of the component in the slurry sample;
comparing the determined level of the component with the range of values for the level of the component;
if the determined level of the component is within the range of values for the level of the component, feeding the CMP slurry to a CMP device and polishing a wafer using the CMP slurry in the CMP device; and
if the determined level of the component is outside the range of values for the level of the component, triggering a signal and feeding the CMP slurry to a temporary storage device.
2. The process according to claim 1 , which comprises homogenizing the slurry sample using ultrasound before carrying out the step of performing the electrothermal slurry atomic absorption spectrometry to obtain the determined level of the component in the slurry sample.
3. The process according to claim 2 , which comprises performing the step of homogenizing the slurry sample at a frequency of between 40 and 50 kHz, at a power of 2 to 10 watts, and for a period of 10 to 60 seconds.
4. The process according to claim 1 , which comprises:
performing the step of defining the range of values such that the range of values is less than 10 ppm.
5. The process according to claim 4 , which comprises performing the step of defining the range of values such that the range of values is less than 100 ppb.
6. The process according to claim 4 , which comprises performing the step of defining the range of values such that the range of values is less than 1 ppb.
7. The process according to claim 4 , which comprises providing the interfering ion as an ion of at least one element selected from a group consisting of Al, Ca, Cr, Cu, Fe, K, Mg, Na, Ni, and Zn.
8. The process according to claim 1 , which comprises using an automatic sampler to feed the slurry sample to the electrothermal absorption spectrometer.
9. The process according to claim 1 which comprises:
defining a maximum deviation for the component;
for the CMP slurry that has been fed to the temporary storage device, determining a difference between the determined level and the range of values for the level;
if the difference is less than the maximum deviation, adding more of the component until the level of the component lies within the range of values; and
if the difference is greater than the maximum deviation, discarding the CMP slurry.
10. The process according to claim 1 , which comprises carrying out the step of performing the electrothermal slurry atomic absorption spectrometry on line so that the CMP slurry can be fed to the CMP device.
11. The process according to claim 1 , which comprises using a process computer to control the steps of:
performing the electrothermal slurry atomic absorption spectrometry to obtain the determined level of the component in the slurry sample; and
feeding of the CMP slurry to the CMP device.