Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications
View Patent ↗A structure that reduces signal cross-talk through the semiconductor substrate for System-On-Chip (SOC) ( 2 ) applications, thereby facilitating the integration of digital circuit blocks ( 6 ) and analog circuit blocks ( 8 ) onto a single IC. Cross-circuit interaction through a substrate ( 4 ) is reduced by strategically positioning the various digital circuit blocks ( 6 ) and analog circuit blocks ( 8 ) in an isolated wells ( 10 ), ( 12 ), ( 16 ) and ( 20 ) over a resistive substrate ( 4 ). These well structures ( 10 ), ( 12 ), ( 16 ), and ( 20 ) are then surrounded with a patterned low resistivity layer ( 22 ) and optional trench region ( 24 ). The patterned low resistivity region ( 22 ) is formed below wells ( 10 ) and ( 12 ) and functions as a low resistance AC ground plane. This low resistivity region ( 22 ) collects noise signals that propagate between digital circuit blocks ( 6 ) and analog circuit blocks ( 8 ).
1. A process for reducing signal cross-talk in a System-On-Chip, comprising:
attenuating an electrical signal with a resistive substrate;
isolating a transistor circuit with a well region;
collecting said electrical signal propagating in said resistive substrate with a buried low resistance ring extending around said transistor circuit;
removing said electrical signal from said buried low resistance ring through a contact coupled to said buried low resistance ring; and
isolating said transistor circuit from said resistive substrate with a dielectric layer formed between said transistor circuit and said substrate, thereby creating a Silicon-On-Insulator structure, wherein said buried low resistance ring is formed below said dielectric layer, and said contact extends through said dielectric layer to couple with said buried low resistance ring.
2. The process of claim 1 , further comprising isolating said transistor circuit with a trench structure that forms a ring around said buried low resistance ring, thereby reducing signal cross-talk by increasing an inductance of said resistive substrate.
3. A process for reducing signal cross-talk in a System-On-Chip, comprising:
attenuating an electrical signal with a resistive substrate;
isolating a transistor circuit with a well region;
collecting said electrical signal propagating in said resistive substrate with a buried low resistance ring, extending around said transistor circuit;
removing said electrical signal from said buried low resistance ring through a contact coupled to said buried low resistance ring, wherein said well region is formed in direct contact with said resistive substrate.
4. A process for reducing signal cross-talk in a System-On-Chip, comprising:
forming a buried low resistance ring within a substrate, thereby defining a window;
forming a well region within the window defined by said buried low resistance ring;
forming a transistor within said well region above said buried low resistance ring; and
forming a contact on said substrate coupled to said buried low resistance ring, whereby electrical signals that propagate through said substrate are collected by said buried low resistance ring and extracted from said substrate through said contact, further comprising the step of forming a dielectric layer between said transistor and said substrate, thereby forming a Silicon-On-Insulator structure, wherein said buried low resistance ring is formed below said dielectric layer.
5. The process of claim 4 , further comprising the step of forming a ring shaped trench that surrounds said buried low resistance ring, thereby reducing signal cross-talk through increasing an inductance of said substrate.
6. The process of claim 4 , wherein said well region is in direct contact with said substrate.
7. The process of claim 4 , wherein said contact extends through said dielectric layer.
8. The process of claim 7 , wherein said contact is formed in the shape of a ring surrounding said transistor.
9. The process of claim 7 , wherein said buried low resistance ring extends completely down to a bottom surface of said substrate.
10. The process of claim 4 , further comprising the step of providing a ring shaped trench that surrounds said buried low resistance ring, thereby reducing said current transient through increasing an inductance of said substrate.
11. A process for reducing the presence of a current transient within a System-On-Chip, comprising:
attenuating a current transient propagating between an analog transistor block and a digital transistor block with a resistive substrate;
isolating said analog transistor block within a well region;
collecting said current transient propagating through said resistive substrate with a low resistance region formed in the shape of a ring extending around said digital transistor block;
providing said current transient with a low resistance path out of said System-On-Chip from said buried low resistance ring through a contact coupled to said buried low resistance ring, and
forming a dielectric layer between said digital transistor block and said substrate, thereby forming a Silicon-On-Insulator structure, wherein said low resistance region is formed below said dielectric layer, and said contact extends through said dielectric layer.
12. The process of claim 11 , wherein said contact is formed in the shape of a ring surrounding said digital transistor block.
13. A process for reducing the presence of a current transient within a System-On-Chip, comprising:
attenuating a current transient propagating between an analog transistor block and a digital transistor block with a resistive substrate;
isolating said analog transistor block within a well region;
collecting said current transient propagating through said resistive substrate with a low resistance region formed in the shape of a ring extending around said digital transistor block; and
providing said current transient with a low resistance path out of said System-On-Chip from said buried low resistance ring through a contact coupled to said buried low resistance ring; wherein said low resistance region extends completely down to a bottom surface of said substrate.