Thin GaAs die with copper back-metal structure
View Patent ↗A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.
1. A semiconductor device comprising:
a GaAs substrate having a thickness of less than 50 microns, said GaAs substrate having an active surface and a backside surface;
a diffusion barrier layer overlying the backside surface;
a back-metal layer comprising copper and overlying the diffusion barrier; and
a plastic die package encapsulating the GaAs substrate.
2. The semiconductor device as in claim 1 , wherein said GaAs substrate has a thickness of between approximately 15 microns and 50 microns.
3. The semiconductor device as in claim 1 , wherein said GaAs substrate has a thickness of approximately 25 microns.
4. The semiconductor device as in claim 1 , wherein said GaAs substrate has a thickness of less than approximately 25 microns.
5. The semiconductor device as in claim 1 , wherein said diffusion barrier comprises tantalum.
6. The semiconductor device as in claim 1 , wherein said semiconductor device further comprises an anti-oxidation layer overlying the back-metal layer.
7. The semiconductor device as in claim 6 , wherein said anti-oxidation layer comprises gold.
8. The semiconductor device as in claim 6 , wherein the back metal layer has a thickness in the range of 11 microns to 15 microns.
9. The semiconductor device as in claim 6 , further comprising a solder attaching the GaAs substrate to a lead frame, wherein the solder is adjacent to the back metal layer.
10. The semiconductor device as in claim 9 , wherein gold is present at an interface between the solder and the back metal layer.
11. A semiconductor device comprising:
a GaAs substrate having a thickness of between approximately 15 microns and 50 microns, said GaAs substrate having an active surface and a backside surface;
a diffusion barrier layer overlying the backside surface; and
a back-metal layer comprising copper overlying the diffusion barrier, the back-metal layer having a nominal thickness of about 11 microns to about 15 microns.
12. The semiconductor device as in claim 11 , further comprising a plastic die package.
13. The semiconductor device as in claim 11 , further comprising an oxidation resistant layer overlying said back-metal layer.
14. The semiconductor device as in claim 11 , further comprising a stress relief layer disposed between the diffusion barrier and the back-metal layer.
15. The semiconductor device as in claim 11 , wherein the back-metal layer provides mechanical support to the GaAs substrate.
16. A semiconductor device comprising:
a GaAs substrate having a thickness of less than 50 microns, the GaAs substrate having an active surface and a backside surface;
a diffusion barrier layer overlying the backside surface;
a stress relief layer overlying the diffusion barrier;
a back-metal layer comprising copper and overlying the stress relief layer; and
a plastic die package encapsulating the GaAs substrate.
17. A semiconductor device comprising:
a GaAs substrate having a thickness of less than 50 microns, said GaAs substrate having an active surface and a backside surface;
a diffusion barrier layer overlying the backside surface;
a back-metal layer comprising copper and overlying the diffusion barrier, the back-metal layer to provide mechanical support for the GaAs substrate; and
a plastic die package encapsulating the GaAs substrate.