Method of forming ruthenium and ruthenium oxide films on a semiconductor structure
View Patent ↗A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.
1. A method of forming a ruthenium film on a semiconductor substrate, the method comprising:
providing a ruthenium precursor formulation comprising tricarbonyl ruthenium dissolved in a solvent;
vaporizing said ruthenium precursor formulation to form a vaporized precursor compound; and
directing said vaporized precursor compound toward said semiconductor substrate to form a ruthenium film on a surface of said semiconductor substrate.
2. The method of claim 1 , further comprising providing said tricarbonyl ruthenium as a liquid.
3. The method of claim 1 , further comprising providing said tricarbonyl ruthenium to have a freezing point around room temperature.
4. The method of claim 1 , wherein said tricarbonyl ruthenium decomposes at a temperature greater than room temperature.
5. The method of claim 1 , further comprising selecting said semiconductor substrate from the group consisting of a semiconductor wafer, a semiconductor on an insulator substrate, and a semiconductor on a sapphire substrate.
6. The method of claim 1 , further comprising vaporizing said ruthenium precursor formulation using a hot wall-type chemical deposition technique.
7. The method of claim 1 , further comprising vaporizing said ruthenium precursor formulation using a cold wall-type chemical deposition technique.
8. The method of claim 1 , further comprising containing said semiconductor substrate within a reaction chamber having a pressure of about 0.1 torr to about 10 torr.
9. The method of claim 1 , further comprising containing said semiconductor substrate within a reaction chamber having a pressure of about 1 atmosphere.
10. The method of claim 1 , further comprising providing said ruthenium precursor formulation to further contain an oxidizing agent.
11. The method of claim 1 , further comprising providing said tricarbonyl ruthenium to further contain oxygen.
12. The method of claim 1 , further comprising directing said vaporized precursor compound in combination with at least one oxidizing gas toward said semiconductor substrate to form a ruthenium oxide film on said surface of said semiconductor substrate.
13. The method of claim 12 , further comprising providing oxygen as said at least one oxidizing gas.
14. The method of claim 12 , further comprising selecting said at least one oxidizing gas from the group consisting of O 2 , N 2 O, O 3 , NO, NO 2 , H 2 O 2 , H 2 O, SO 2 , SO 3 , organic peroxides, and combinations thereof.
15. The method of claim 1 , further comprising injecting said ruthenium precursor formulation into a vaporizer to vaporize said ruthenium precursor formulation.
16. The method of claim 1 , further comprising injecting said ruthenium precursor formulation into a flash vaporizer to vaporize said ruthenium precursor formulation.
17. The method of claim 1 , further comprising selecting said solvent from the group consisting of hexane, hexanes, pentane, heptane, and butylacetate.
18. A method of forming a ruthenium film on a semiconductor structure, the method comprising:
providing a ruthenium precursor formulation comprising cyclohexadienetricarbonyl ruthenium dissolved in a solvent;
vaporizing said ruthenium precursor formulation to form a vaporized precursor compound; and
directing said vaporized precursor compound toward said semiconductor structure to form a ruthenium film on a surface of said semiconductor structure.
19. The method of claim 18 , further comprising selecting said solvent from the group consisting of hexane, hexanes, pentane, heptane, and butylacetate.
20. The method of claim 18 , further comprising selecting said semiconductor structure from the group consisting of a semiconductor wafer, a semiconductor on an insulator substrate, and a semiconductor on a sapphire substrate.
21. The method of claim 18 , further comprising selecting said ruthenium precursor formulation to contain an oxidizing agent.
22. The method of claim 18 , further comprising providing said ruthenium precursor formulation to further contain oxygen.
23. The method of claim 18 , further comprising directing said vaporized precursor compound in combination with at least one oxidizing gas toward said semiconductor structure to form a ruthenium oxide film on said surface of the semiconductor structure.
24. The method of claim 23 , further comprising providing oxygen as said at least one oxidizing gas.
25. The method of claim 23 , further comprising selecting said at least one oxidizing gas from the group consisting of O 2 , N 2 O, O 3 , NO, NO 2 , H 2 O 2 , H 2 O, SO 2 , SO 3 , organic peroxides, and combinations thereof.
26. The method of claim 18 , wherein vaporizing said ruthenium precursor formulation comprises injecting said ruthenium precursor formulation into a vaporizer.
27. The method of claim 18 , wherein vaporizing said ruthenium precursor formulation comprises injecting said ruthenium precursor formulation into a flash vaporizer.