Treatment of dielectric material to enhance etch rate
View Patent ↗In one embodiment, the present invention relates to a method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of: (A) pre-treating one or more exposed portions of a dielectric layer with a plasma in a plasma etching tool to increase removal rate of the one or more exposed portions upon etching; and (B) removing the one or more exposed portions of the dielectric layer in the same plasma etching tool of step (A) via plasma etching.
1. A method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of:
(A) pre-treating one or more exposed portions of a dielectric layer with a plasma in a plasma etching tool to increase removal rate of the one or more exposed portions upon etching; and
(B) removing the one or more exposed portions of the dielectric layer in the same plasma etching tool of step (A) via plasma etching,
wherein the plasma used to pre-treat the one or more exposed portions of the dielectric layer is selected from a plasma generated by O 2 , N 2 , N 2 O, NO, HBr, He, F 2 , SF 6 plus CH 3 F plus O 2 , or mixtures of two or more thereof.
2. The method of claim 1 , wherein the dielectric material is a standard-K dielectric material.
3. The method of claim 1 , wherein the dielectric material is a mid-K dielectric material.
4. The method of claim 1 , wherein the dielectric material is a high-K dielectric material.
5. The method of claim 4 , wherein the high-K dielectric material comprises at least one of hafnium oxide, zirconium oxide, tantalum oxide, titanium dioxide, cesium oxide, lanthanum oxide, tungsten oxide, yttrium oxide, bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium oxide (Ba 1-x Sr x O 3 ), BST (Ba 1-x Sr x TiO 3 ), PZN (PbZn x Nb 1-x O 3 ), PZT (PbZr x Ti 1-x O 3 ) and PST (PbSe x Ta 1-x O 3 ).
6. The method of claim 1 , wherein one or more carrier gases are utilized in the plasma pre-treat step.
7. The method of claim 1 , wherein the plasma used to etch the one or more exposed portions of the dielectric layer is selected from a plasma generated by HBr, F 2 , SF 6 plus O 2 , N 2 , CHF 3 plus Ar, or mixtures of two or more thereof.
8. The method of claim 7 , wherein one or more carrier gases are utilized in the plasma etch step.
9. A method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of:
(A) pre-treating one or more exposed portions of a high-K dielectric layer with a plasma generated by one or more gases selected from O 2 , N 2 , N 2 O, NO, HBr, He, F 2 , SF 6 plus O 2 , CH 3 F plus O 2 , or mixtures of two or more thereof, in a plasma etching tool to increase removal rate of the one or more exposed portions upon etching; and
(B) removing the one or more exposed portions of the dielectric layer in the same plasma etching tool of step (A) via plasma etching with a plasma generated by one or more gases selected from HBr, F 2 , SF 6 plus O 2 , N 2 , CHF 3 plus Ar, or mixtures of two or more thereof.
10. The method of claim 9 , wherein the high-K dielectric material comprises at least one of hafnium oxide, zirconium oxide, tantalum oxide, titanium dioxide, cesium oxide, lanthanum oxide, tungsten oxide, yttrium oxide, bismuth silicon oxide (Bi 4 Si 2 O 12 ), barium strontium oxide (Ba 1-x Sr x O 3 ), BST (Ba 1-x Sr x TiO 3 ), PZN (PbZn x Nb 1-x O 3 ), PZT (PbZr x Ti 1-x O 3 ) and PST (PbSe x Ta 1-x O 3 ).
11. The method of claim 9 , wherein one or more carrier gases are utilized in the plasma pre-treat step and/or in the plasma etch step.
12. The method of claim 9 , wherein one or more gases used in the pre-treat step are each independently supplied at a rate of between about 25 and about 300 sccm.
13. The method of claim 9 , wherein one or more gases used in the pre-treat step are each independently supplied at a rate of between about 5 and about 30 sccm.
14. The method of claim 9 , wherein one or more gases used in the etch step are each independently supplied at a rate of between about 25 and about 300 sccm.
15. The method of claim 9 , wherein one or more gases used in the etch step are each independently supplied at a rate of between about 5 and about 30 sccm.
16. A method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of:
(A) pre-treating one or more exposed portions of a dielectric layer with a plasma in a plasma etching tool to increase removal rate of the one or more exposed portions upon etching; and
(B) removing the one or more exposed portions of the dielectric layer in the same plasma etching tool of step (A) via plasma etching,
wherein the dielectric material is a mid-K dielectric material or a high-K dielectric material.
17. The method of claim 16 , wherein the plasma used to pre-treat the one or more exposed portions of the dielectric layer is selected from a plasma generated by O 2 , N 2 , N 2 O, NO, HBr, He, F 2 , SF 6 plus O 2 , CH 3 F plus O 2 , or mixtures of two or more thereof.
18. The method of claim 17 , wherein one or more carrier gases are utilized in the plasma pre-treat step.
19. The method of claim 16 , wherein the plasma used to etch the one or more exposed portions of the dielectric layer is selected from a plasma generated by HBr, F 2 , SF 6 plus O 2 , N 2 , CHF 3 plus Ar, or mixtures of two or more thereof.
20. The method of claim 19 , wherein one or more carrier gases are utilized in the plasma etch step.