Methods of forming nitrogen-containing masses, silicon nitride layers, and capacitor constructions

1. A method of forming a nitrogen containing mass, comprising:

providing a monocrystalline silicon substrate, the substrate supporting a silicon-containing mass and a silicon oxide-containing mass; the silicon-containing mass having substantially no oxygen therein;

forming a first nitrogen-containing mass to be across the silicon oxide-containing mass and not across at least some of the silicon-containing mass; and

after forming the first nitrogen-containing mass, forming a second nitrogen-containing mass which extends across at least some of the silicon-containing mass and across at least some of the silicon oxide-containing mass; the second nitrogen-containing mass being over and in physical contact with the first nitrogen-containing mass.

2. The method of claim 1 wherein the first nitrogen-containing mass is across at least a portion of the silicon-containing mass.

3. The method of claim 1 wherein the silicon-containing mass consists essentially of silicon.

4. The method of claim 1 wherein the silicon-containing mass consists essentially of conductively-doped silicon.

5. The method of claim 1 wherein the silicon-containing mass consists of conductively-doped silicon.

6. The method of claim 1 wherein the silicon-containing mass comprises polycrystalline silicon.

7. The method of claim 1 wherein the silicon-containing mass comprises hemispherical grain polycrystalline silicon.

8. The method of claim 1 wherein the silicon oxide-containing mass comprises borophosphosilicate glass.

9. The method of claim 1 wherein the first nitrogen-containing mass comprises silicon nitride.

10. The method of claim 1 wherein the second nitrogen-containing mass comprises silicon nitride.

11. A method of forming a silicon nitride layer, comprising:

providing a first structure comprising non-oxidized silicon and a second structure comprising an oxide of silicon;

forming a sacrificial layer over the first structure;

while the sacrificial layer is over the first structure, forming a nitrogen-containing material across at least some of the second structure;

after forming the nitrogen-containing material, removing the sacrificial layer; and

after removing the sacrificial layer, forming a silicon nitride layer which extends across the first structure and across the nitrogen-containing material.

12. The method of claim 11 wherein the non-oxidized silicon comprises polycrystalline silicon.

13. The method of claim 11 wherein the non-oxidized silicon comprises hemispherical grain polycrystalline silicon.

14. The method of claim 11 wherein the oxide of silicon is comprised by borophosphosilicate glass.

15. The method of claim 11 wherein the nitrogen-containing layer is silicon nitride.

16. The method of claim 11 wherein the sacrificial layer is photoresist.

17. A method of forming a silicon nitride layer, comprising:

providing a first structure comprising silicon and a second structure comprising an oxide of silicon;

forming photoresist over and in contact with the first structure;

while the photoresist is over the first structure, forming a nitrogen-containing material across the second structure;

after forming the nitrogen-containing material, removing the photoresist;

after removing the photoresist, forming a silicon nitride layer which extends across the first and second structures, the silicon nitride layer being over the nitrogen-containing material; and

conductively-doping the first structure.

18. The method of claim 17 wherein the conductively-doping of the first structure occurs prior to forming the silicon nitride material.

19. The method of claim 17 wherein the first structure comprises hemispherical grain polycrystalline silicon.

20. A method of forming a capacitor construction, comprising:

providing a substrate, the substrate comprising a first mass and a second mass, the first mass comprising silicon and the second mass comprising silicon oxide;

forming photoresist over and in contact with the first mass;

while the photoresist is over the first mass, forming a nitrogen-containing material across at least a portion of the second mass;

after forming the nitrogen-containing material, removing the photoresist;

after removing the photoresist, forming a silicon nitride layer which extends across the first and second masses, the silicon nitride layer being over the nitrogen-containing material;

conductively-doping the first mass to define a first capacitor electrode; and

forming a second capacitor electrode spaced from the first capacitor electrode by at least the silicon nitride layer; the silicon nitride layer, first capacitor electrode and second capacitor electrode together defining at least a portion of a capacitor construction.

21. The method of claim 20 further comprising forming a silicon oxide layer over the silicon nitride layer prior to forming the second capacitor electrode; the second capacitor electrode being spaced from the first capacitor electrode by both the silicon nitride layer and the silicon oxide layer.

22. The method of claim 20 wherein the conductively-doping of the first mass occurs prior to forming the nitrogen-containing material.

23. The method of claim 20 wherein the first mass comprises hemispherical grain polycrystalline silicon, and wherein the second mass comprises borophosphosilicate glass.