Patent Assignment
Reel/Frame 023438/0614
Assignment of Assignor's Interest
Recorded: 2009-10-29
Received: 2009-10-29
Pages: 34
Assignor
MICRON TECHNOLOGY, INC.
Executed: 2009-06-09
Assignee
MOSAID TECHNOLOGIES INCORPORATED
11 HINES ROAD, SUITE 203, OTTAWA, CAX, K2K 2X1, CANADA
Covered Properties
(64)
Methods for Enhancing Capacitors in Integrated Circuits
Application:
11/796,773 →
Methods of Forming Semiconductor Constructions
Application:
11/375,696 →
Semiconductor Constructions
Application:
11/203,046 →
Gapped-Plate Capacitor
Application:
11/038,602 →
System and Method for Selectively Increasing Surface Temperature of an Object
Application:
10/931,592 →
Structures and Methods for Enhancing Capacitors in Integrated Circuits
Application:
10/931,396 →
Dielectric Material Forming Methods and Enhanced Dielectric Materials
Application:
10/914,888 →
Chemical Treatment of Semiconductor Substrates
Application:
10/913,555 →
Method and Apparatus for Controlling Radiation Beam Intensity Directed to Microlithographic Substrates
Application:
10/870,561 →
Gapped-Plate Capacitor
Application:
10/853,851 →
Aluminum-Beryllium Alloys for Air Bridges
Application:
10/819,025 →
Reduced Aspect Ratio Digit Line Contact Process Flow Used During the Formation of a Semiconductor Device
Application:
10/807,952 →
Method for Improved Processing and Etchback of a Container Capacitor
Application:
10/735,897 →
Semiconductor Processing Methods
Application:
10/672,816 →
Method of Forming Flow-Fill Structures
Application:
10/658,468 →
Semiconductor Circuit Constructions,Capacitor Constructions, and Methods of Forming Semiconductor Circuit Constructions and Capacitor Constructions
Application:
10/423,423 →
An Apparatus for the in Situ Alignment of a Mask and a Semiconductor Wafer.
Application:
10/417,191 →
Integrated Circuitry
Application:
10/391,952 →
Apparatus for Convenient and Comfortable Cursor Control Device
Application:
10/367,153 →
Aluminum-Beryllium Alloys for Air Bridges
Application:
10/349,015 →
Methods of Forming Nitrogen-Containing Masses, Silicon Nitride Layers, and Capacitor Constructions
Application:
10/339,695 →
Solutions of Metal-Comprising Materials
Application:
10/336,087 →
Reticle Cleaning Without Damaging Pellicle
Application:
10/328,771 →
Rhodium-Rich Integrated Circuit Capacitor Electrode
Application:
10/318,597 →
Flow-Fill Structures
Application:
10/314,228 →
Low Dielectric Silicon Oxynitride Spacer Films and Devices Incorporating Such Films
Application:
10/303,779 →
Reticle Cleaning Without Damaging Pellicle
Application:
10/262,443 →
Methods and Apparatus for Duty Cycle Control
Application:
10/229,790 →
Deadhesion Method and Mechanism for Wafer Processing
Application:
10/229,868 →
Methods to Form Rhodium-Rich Oxygen Barriers
Application:
10/209,386 →
Apparatus and Method for Feature Edge Detection in Semiconductor Processing
Application:
10/206,042 →
Double Layer Electrode and Barrier System on Hemispherical Grain Silicon for Use with High Dielectric Constant Materials and Methods for Fabricating the Same
Application:
10/159,892 →
Methods of Forming Field Effect Transistors and Related Field Effect Transistor Constructions
Application:
10/143,264 →
Reticle Cleaning Without Damaging Pellicle
Application:
10/125,853 →
Method of Forming Low Dielectric Silicon Oxynitride Spacer Films Highly Selective to Etchants
Application:
10/118,946 →
Dynamic Memory Based on Single Electron Storage
Application:
10/093,528 →
Methods of Forming Capacitors and Resultant Capacitor Structures
Application:
10/082,594 →
Methods of Forming Materials Comprising Tungsten and Nitrogen
Application:
10/035,390 →
Chemical Treatment of Semiconductor Substrates
Application:
10/027,519 →
Methods of Forming Capacitors and Resultant Capacitor Structures
Application:
09/990,715 →
Methods of Forming Field Effect Transistors and Related Field Effect Transistor Constructions
Application:
09/999,885 →
Methods of Forming Field Effect Transistors and Related Field Effect Transistor Constructions
Application:
09/999,886 →
Methods for Forming and Integrated Circuit Structures Containing Ruthenium and Tungsten Containing Layers
Application:
10/002,779 →
Methods for Forming and Integrated Circuit Structures Containing Ruthenium and Tungsten Containing Layers
Application:
10/002,906 →
Solutions of Metal-Comprising Materials, Methods of Forming Metal-Comprising Layers, Methods of Storing Metal-Comprising Materials, and Methods of Forming Capacitors
Application:
09/999,840 →
Method for Controlling Radiation Beam Intensity Directed to Microlithographic Substrates
Application:
09/945,316 →
Thermal Processing of Metal Alloys for an Improved Cmp Process in Integrated Circuit Fabrication
Application:
09/945,536 →
Thermal Processing of Metal Alloys for an Improved Cmp Process in Integrated Circuit Fabricatin
Application:
09/942,201 →
Deadhesion Method and Mechanism for Wafer Processing
Application:
09/942,181 →
Method for Improved Processing and Etchback of a Container Capacitor
Application:
09/928,308 →
Capacitor Electrode for Integrating High K Materials
Application:
09/880,536 →
Semiconductor Constructions Compromising Aluminum-Containing Layers
Application:
09/902,279 →
Methods of Forming Semiconductor Circuit Constructions and Capacitor Constructions
Application:
09/894,320 →
Double Layer Electrode and Barrier System on Hemispherical Grain Silicon for Use with High Dielectric Constant Materials and Methods for Fabricating the Same
Application:
09/892,594 →
Organic Field Ionization Source
Application:
09/891,919 →
Solutions of Metal-Comprising Materials, and Methods of Making Solutions of Metal-Comprising Materials
Application:
09/880,580 →
Integrated Circuit Capacitor Structures
Application:
09/880,579 →
Methods and Solutions for Cleaning Polished Aluminum-Containing Layers, Methods for Making Metallization Structures, and the Structures Resulting from These Methods
Application:
09/841,973 →
Methods of Forming Nitrogen-Containing Masses, Silicon Nitride Layers, and Capacitor Constructions
Application:
09/823,200 →
Method for Forming Raised Structures by Controlled Selective Epitaxial Growth of Facet Using Spacer
Application:
09/816,962 →
Enhanced Capacitor Shape
Application:
09/798,992 →
Rhodium-Rich Oxygen Barriers
Application:
09/789,335 →
Dynamic Memory Based on Single Electron Storage
Application:
09/779,547 →
Reduced Aspect Ratio Digit Line Contact Process Flow Used During the Formation of a Semiconductor Device
Application:
09/765,885 →