IP Library Granted Patent US 6,673,689
Granted Patent Utility
US 6,673,689 · Confirmation No. 1957

DOUBLE LAYER ELECTRODE AND BARRIER SYSTEM ON HEMISPHERICAL GRAIN SILICON FOR USE WITH HIGH DIELECTRIC CONSTANT MATERIALS AND METHODS FOR FABRICATING THE SAME

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Code Description Pages PDF
2003-09-12 IFEE Issue Fee Payment (PTO-85B) 1 View
2003-09-12 A... Amendment/Request for Reconsideration-After Non-Final Rejection 2 View
2003-09-12 REM Applicant Arguments/Remarks Made in an Amendment 10 View
2003-09-12 LET. Miscellaneous Incoming Letter 5 View
2003-09-12 DRW Drawings-only black and white line drawings 1 View
2002-05-30 TRNA Transmittal of New Application 2 View
2002-05-30 SPEC Specification 11 View
2002-05-30 CLM Claims 6 View
2002-05-30 ABST Abstract 1 View
2002-05-30 DRW Drawings-only black and white line drawings 7 View
2002-05-30 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,673,689
App. No.
10/159,892
Filed
2002-05-30
Granted
2004-01-06
Pub. No.
US20020155658A1
Art Unit
2823
PTA
-68 days