Chemical treatment of semiconductor substrates
View Patent ↗A method is disclosed for removing liquids from a semiconductor substrate by contacting the liquid on the substrate with a liquid which attracts the liquid on the substrate, separating the liquids from the substrate, and inducing a phase transition in a layer on the substrate. In particular, the method is applicable to removing water from a water-containing layer on the substrate by contacting the layer with a hygroscopic liquid. Trenches on a substrate can be isolated by filling the trenches with a water-containing gel formed by reacting silane and hydrogen peroxide. The gel is contacted with sulfuric acid to remove a portion of the water from the gel before annealing to form silica in the trenches. Unlike filled trenches formed by conventional technology, there are no voids in the bottom of the trenches. The method is also applicable to forming dielectric layers which cover metal lines, low-dielectric layers, and interlayer dielectric layers. The liquid may be applied to the substrate by chemical vapor deposition or by spin-applying.
1. A method of treating a semiconductor substrate in a chamber, the method comprising:
forming a liquid layer containing water on the semiconductor substrate;
contacting the liquid layer with a hygroscopic liquid and transferring at least a portion of the water from the liquid layer into the hygroscopic liquid;
separating the hygroscopic liquid from the liquid layer; and
inducing a phase transition in the liquid layer after contacting.
2. The method of claim 1 , wherein inducing a phase transition is conducted by annealing the semiconductor substrate and the liquid layer.
3. The method of claim 1 , wherein the liquid layer comprises silicon and a dopant selected from the group consisting of arsenic, antimony, boron, phosphorous, and gallium.
4. The method of claim 1 , wherein the liquid layer is formed by reacting silicon-containing vapor with hydrogen peroxide vapor.
5. The method of claim 4 , wherein the silicon-containing vapor comprises silane.
6. The method of claim 1 , wherein the hygroscopic liquid is selected from the group consisting of sulfuric acid, phosphoric acid, and a hygroscopic organic solvent.
7. The method of claim 1 , wherein the hygroscopic liquid comprises sulfuric acid.
8. The method of claim 7 , wherein the hygroscopic liquid comprising sulfuric acid is contacted with the liquid layer at a temperature between 0° and 300° Centigrade.
9. A method of treating a semiconductor substrate in a chamber, the method comprising:
placing the semiconductor substrate in the chamber;
forming a liquid-containing layer on the semiconductor substrate;
contacting the liquid-containing layer with a liquid-attractive liquid, thereby removing at least a portion of liquid in the liquid-containing layer into the liquid-attractive liquid; and
separating the liquid-attractive liquid from the liquid-containing layer after contacting.
10. The method of claim 9 , wherein the liquid in the liquid-containing layer is water and the liquid-attractive liquid is a hygroscopic liquid.
11. The method of claim 10 , wherein the hygroscopic liquid is selected from the group consisting of sulfuric acid, phosphoric acid, and hygroscopic organic solvents.
12. The method of claim 11 , wherein the hygroscopic liquid is sulfuric acid having a concentration of 50 to 98 weight percent sulfuric acid.
13. The method of claim 9 , wherein the liquid-attractive liquid is separated from the liquid-containing layer by tilting the semiconductor substrate.
14. The method of claim 9 , wherein the liquid-attractive liquid is separated from the liquid-containing layer by spinning dry the semiconductor substrate.
15. The method of claim 9 , wherein the liquid-attractive liquid is separated from the liquid-containing layer by contacting the liquid-attractive liquid with a separating liquid in which the liquid-attractive liquid is soluble.
16. A method of treating a semiconductor substrate, comprising:
applying a liquid-containing layer to the substrate, wherein the liquid-containing layer is formed by reacting a silicon-containing vapor with hydrogen peroxide vapor;
contacting the liquid-containing layer with a hygroscopic liquid to remove at least a portion of water from the liquid-containing layer; and
separating the hygroscopic liquid from the liquid-containing layer.
17. The method of claim 16 , wherein the separating is performed by rinsing the substrate and liquid-containing layer with water.
18. The method of claim 16 , further comprising annealing the substrate and liquid-containing layer after separating.
19. The method of claim 18 , wherein the substrate and liquid-containing layer are heated after separating and prior to annealing.
20. The method of claim 16 , wherein the liquid-containing layer is formed on the substrate by chemical vapor deposition.