Semiconductor constructions
View Patent ↗The invention encompasses a method of forming a silicon nitride layer. A substrate is provided which comprises a first mass and a second mass. The first mass comprises silicon and the second mass comprises silicon oxide. A sacrificial layer is formed over the first mass. While the sacrificial layer is over the first mass, a nitrogen-containing material is formed across the second mass. After the nitrogen-containing material is formed, the sacrificial layer is removed. Subsequently, a silicon nitride layer is formed to extend across the first and second masses, with the silicon nitride layer being over the nitrogen-containing material. Also, a conductivity-enhancing dopant is provided within the first mass. The invention also pertains to methods of forming capacitor constructions.
1. A semiconductor construction, comprising:
a monocrystalline silicon substrate;
a silicon oxide-containing mass over the substrate, and having an opening extending therethrough to the substrate;
a silicon-containing layer within the opening and narrowing the opening, the silicon-containing layer having substantially no oxygen therein, the silicon-containing layer having a roughened outer surface and a smooth uppermost surface;
a first nitrogen-containing layer extending across the silicon oxide-containing mass and across the smooth uppermost surface of the silicon-containing layer, the first nitrogen-containing layer being in direct contact with the silicon oxide-containing mass and the smooth uppermost surface of the silicon-containing layer, the first nitrogen-containing layer having a first thickness; and
a second nitrogen-containing layer extending across the roughened outer surface of the silicon-containing layer, the second nitrogen-containing layer being in direct contact with the roughened outer surface of the silicon-containing layer, the second nitrogen-containing layer having a second thickness which is less than the first thickness.
2. The construction of claim 1 further comprising a transistor supported by the substrate and having a source/drain region corresponding to a conductively-doped diffusion region within the substrate; and wherein the opening extends to the source/drain region.
3. The construction of claim 1 wherein the silicon-containing layer consists essentially of silicon.
4. The construction of claim 1 wherein the silicon-containing layer consists essentially of conductively-doped silicon.
5. The construction of claim 1 wherein the silicon-containing layer consists of conductively-doped silicon.
6. The construction of claim 1 wherein the silicon-containing layer comprises polycrystalline silicon.
7. The construction of claim 1 wherein the silicon-containing layer comprises hemispherical grain polycrystalline silicon.
8. The construction of claim 1 wherein the silicon oxide-containing mass comprises borophosphosilicate glass.
9. The construction of claim 1 wherein the first nitrogen-containing layer comprises silicon nitride.
10. The construction of claim 1 wherein the second nitrogen-containing layer comprises silicon nitride.
11. The construction of claim 1 wherein the first thickness is from about 20 Å to about 30 Å, and the second thickness is less than 10 Å.
12. The construction of claim 1 further comprising a silicon-dioxide-containing layer over the first and second nitrogen-containing layers, and a conductive material over the silicon-dioxide-containing layer; the conductive material being capacitively coupled with the silicon-containing layer through at least the silicon-dioxide-containing layer and the second nitrogen-containing layer.