IP Library Granted Patent US 6,840,988
Granted Patent B2
US 6,840,988 · App. 10/365,204 · Granted Jan 11, 2005

Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide

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Quick Facts
Patent No.
US 6,840,988
App. No.
10/365,204
Granted
Jan 11, 2005
Kind
B2
Abstract

A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the present invention include a ruthenium precursor compound and a solvent capable of solubilizing the ruthenium precursor compound. A method is further provided for making a vaporized ruthenium precursor for use in the chemical vapor deposition of ruthenium and ruthenium-containing materials onto substrates, wherein a ruthenium precursor formulation having a ruthenium-containing precursor compound and a solvent capable of solubilizing the ruthenium-containing precursor compound is vaporized.

Claims (27)

1. A solvated ruthenium precursor formulation comprising:

a tricarbonyl ruthenium compound containing an oxidizing agent; and

a solvent capable of solubilizing said tricarbonyl ruthenium compound.

2. The formulation of claim 1 , wherein said solvated ruthenium precursor formulation is a liquid.

3. The formulation of claim 1 , wherein said solvated ruthenium precursor formulation has a freezing point around room temperature.

4. The formulation of claim 1 , wherein said solvated ruthenium precursor formulation decomposes at a temperature greater than room temperature.

5. The formulation of claim 1 , wherein said oxidizing agent consists of a compound selected from the group consisting of O 2 , N 2 O, O 3 , NO, NO 2 , H 2 O 2 , H 2 O, SO 2 , SO 3 , organic peroxides, and combinations thereof.

6. The formulation of claim 1 , wherein said solvated ruthenium precursor formulation further contains oxygen.

7. The formulation of claim 1 , wherein said solvated ruthenium precursor formulation further contains N 2 O.

8. The formulation of claim 1 , wherein said solvent is selected from the group consisting of hexane, pentane, heptane, and butylacetate.

9. A solvated ruthenium precursor formulation comprising:

an oxidized ruthenium compound; and

a solvent selected from the group consisting of hexane, pentane, heptane, and butylacetate.

10. The formulation of claim 9 , wherein said solvated ruthenium precursor formulation contains an oxidizing agent.

11. The formulation of claim 10 , wherein said oxidized ruthenium compound includes an oxidizing group selected from the group consisting of O 2 , N 2 O, O 3 , NO, NO 2 , H 2 O 2 , H 2 O, SO 2 , SO 3 , organic peroxides, and combinations thereof.

12. The formulation of claim 9 , wherein said solvated ruthenium precursor formulation further contains oxygen.

13. A solvated ruthenium precursor formulation comprising:

cyclohexadienetricarbonyl ruthenium;

a solvent selected from the group consisting of hexane, pentane, heptane, and butylacetate; and

an oxidizing agent.

14. The formulation of claim 13 , wherein said cyclohexadienetricarbonyl ruthenium is a liquid.

15. The formulation of claim 13 , wherein said solvated ruthenium precursor formulation has a freezing point around room temperature.

16. The formulation of claim 13 , wherein said solvated ruthenium precursor formulation decomposes at a temperature greater than room temperature.

17. The formulation of claim 13 , wherein said cyclohexadienetricarbonyl ruthenium is tricarbonyl ruthenium.

18. The formulation of claim 13 , wherein said solvated ruthenium precursor formulation contains an oxidizing agent.

19. The formulation of claim 13 , wherein said oxidizing agent consists of a compound selected from the group consisting of O 2 , N 2 O, O 3 , NO, NO 2 , H 2 O 2 , H 2 O, SO 2 , SO 3 , organic peroxides, and combinations thereof.

20. The formulation of claim 13 , wherein said cyclohexadienetricarbonyl ruthenium is tricarbonyl (1,2,3,4-η)-1,3-cyclohexadiene ruthenium.

Assignments (7)
RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Oct 12, 2018
From: ROYAL BANK OF CANADA, AS LENDER
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 047645/0424 →
U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Sep 9, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS INC., AS LENDER; ROYAL BANK OF CANADA, AS LENDER
Reel/Frame 033706/0367 →
CHANGE OF ADDRESS Recorded Sep 3, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 033678/0096 →
RELEASE OF SECURITY INTEREST Recorded Aug 7, 2014
From: ROYAL BANK OF CANADA
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.; CONVERSANT IP N.B. 868 INC.; CONVERSANT IP N.B. 276 INC.
Reel/Frame 033484/0344 →
CHANGE OF NAME Recorded Mar 13, 2014
From: MOSAID TECHNOLOGIES INCORPORATED
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 032439/0638 →
U.S. INTELLECTUAL PROPERTY SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) - SHORT FORM Recorded Jan 10, 2012
From: 658276 N.B. LTD.; 658868 N.B. INC.; MOSAID TECHNOLOGIES INCORPORATED
To: ROYAL BANK OF CANADA
Reel/Frame 027512/0196 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2009
From: MICRON TECHNOLOGY, INC.
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 023574/0723 →