Patent Assignment
Reel/Frame 023574/0723
Assignment of Assignor's Interest
Recorded: 2009-12-01
Received: 2009-12-01
Pages: 33
Assignor
MICRON TECHNOLOGY, INC.
Executed: 2009-06-09
Assignee
MOSAID TECHNOLOGIES INCORPORATED
11 HINES ROAD, SUITE 203, OTTAWA, CAX, K2K 2X1, CANADA
Covered Properties
(71)
Subscriber Management System for a Communication Network
Application:
12/186,451 →
System and Method for Cell Planning in a Wireless Communication Network
Application:
12/185,758 →
System and Method for Condensed Frequency Reuse in a Wireless Communication System
Application:
12/055,169 →
Extensible Micro-Mobility Wireless Network Architecture
Application:
12/054,237 →
System and Method for Adaptive Modulation and Power Control in a Wireless Communication System
Application:
11/618,200 →
Sequential Pulse Deposition
Application:
11/496,093 →
Method and Apparatus for Controlling Radiation Beam Intensity Directed to Microlithograhic Substrates
Application:
11/397,176 →
Establishing a Communication Channel in a Wireless Network
Application:
10/958,679 →
Process for the Fabrication of Oxide Films
Application:
10/945,535 →
Reducing Asymmetrically Deposited Film Induced Registration Error
Application:
10/932,771 →
Methods and Apparatus for Dynamically Assigning Time Slots in a Wireless Communication System
Application:
10/917,825 →
Computerized methods and software for business management
Application:
10/910,264 →
Delay Compensation
Application:
10/894,257 →
System for Depositing a Layered Film
Application:
10/871,965 →
Method and Apparatus for Depositing Films
Application:
10/858,307 →
Microlithographic Mask Structures and Method of Fabrication
Application:
10/847,337 →
Nanotube Semiconductor Devices and Methods for Making the Same
Application:
10/822,113 →
Detection Devices, Methods and Systems for Gas Phase Materials
Application:
10/771,043 →
Methods for Stereolithographic Processing of Components and Assemblies
Application:
10/455,091 →
Localized Array Threshold Voltage Implant to Enhance Charge Storage Within Dram Memory Cells
Application:
10/437,494 →
Capacitor Having Rusixoy-Containing Adhesion Layers
Application:
10/430,457 →
Process for Fabricating Rusixoy-Containing Adhesion Layers
Application:
10/430,456 →
Low K Film Application for Interlevel Dielectric and Method of Cleaning Etched Features
Application:
10/423,210 →
Dram Cell Constructions
Application:
10/393,696 →
Integrated Decoupling Capacitors
Application:
10/372,813 →
Solvated Ruthenium Precursors for Direct Liquid Injection of Ruthenium and Ruthenium Oxide
Application:
10/365,204 →
Dram Constructions and Dram Devices
Application:
10/325,159 →
Nanotube Semiconductor Devices and Methods for Making the Same
Application:
10/315,511 →
Processes to Form a Metallic Film Stack
Application:
10/313,088 →
Memory Structure with an Annealed Film
Application:
10/303,017 →
Delay Compensation
Application:
10/272,272 →
Platinum-Rhodium Stack as an Oxygen Barrier in an Integrated Circuit Capacitor
Application:
10/268,482 →
Detection Devices, Methods and Systems for Gas Phase Materials
Application:
10/266,797 →
Localized Array Threshold Voltage Implant Enhance Charge Storage Within Dram Memory Cells
Application:
10/234,576 →
Method and Apparatus for the Fabrication of Ferroelectric Films
Application:
10/217,212 →
Reduction of Surface Roughness During Chemical Mechanical Planarization (Cmp)
Application:
10/209,035 →
Methods of Forming Dram Cells
Application:
10/188,022 →
Low K Film Application for Interlevel Dielectric and Method of Cleaning Etched Features
Application:
10/178,398 →
Process for Fabricating Rusixoy-Containing Adhesion Layers
Application:
10/158,978 →
Apparatus and System for Removing Photoresist Through the Use of Hot Deionized Water Bath, Water Vapor and Ozone Gas
Application:
10/131,371 →
Reducing Asymmetrically Deposited Film Induced Registration Error
Application:
10/122,555 →
Reducing Asymmetrically Deposited Film Induced Registration Error
Application:
10/122,786 →
Nanotube Semiconductor Devices and Methods for Making the Same
Application:
10/092,829 →
Location Optimization and Base Assignment Tool for Creating Optimal Switch-Base Station Networks in the Wireless Industry
Application:
10/075,166 →
Rusixoy-Containing Adhesion Layers
Application:
10/075,863 →
Method of Manufacturing a Capacitor Having Rusixoy-Containing Adhesion Layers
Application:
10/075,574 →
A Capacitor Having Rusixoy-Containing Adhesion Layers
Application:
10/075,819 →
Integrated Circuit Devices Having Contact and Container Structures
Application:
10/039,950 →
Method of Fabricating an SRRUO3 Film
Application:
10/003,261 →
Dram Cell Constructions
Application:
10/012,233 →
Dry Low K Film Application for Interlevel Dielectric and Method of Cleaning Etched Features
Application:
09/998,729 →
Cvd of Ptrh with Good Adhesion and Morphology
Application:
09/997,073 →
Pseudo Variable Resistor for Tester Platform
Application:
09/988,987 →
Rtp, Udp, Ip Header Compression on the Circuit Switched Type Airlink Access
Application:
09/987,955 →
Solvated Ruthenium Precursors for Direct Liquid Injection Ofruthenium and Ruthenium Oxide
Application:
10/012,668 →
Localized Array Threshold Voltage Implant to Enhance Charge Storage Within Dram Memory Cells
Application:
09/945,252 →
Dielectric Material Forming Methods and Enhanced Dielectric Materials
Application:
09/945,393 →
Method of Forming Drams, Methods of Forming Access Transistors for Dram Devices, and Methods of Forming Transistor Source/Drain Regions
Application:
09/941,375 →
Process for Fabricating Rusixoy-Containing Adhesion Layers
Application:
09/935,490 →
Reticle Cleaning Without Damaging Pellicle
Application:
09/924,636 →
Method for Seamless Port Capability for an Alternative Service Provider
Application:
09/918,566 →
Microlithographic Device, Microlithographic Assist Features, System for Forming Contacts and Other Structures, and Method of Determining Mask Patterns
Application:
09/917,697 →
Out of Channel Cyclic Redundancy Code Method for a Discrete Multitone Spread Spectrum Communications System
Application:
09/902,730 →
Rusixoy-Containing Adhesion Layers
Application:
09/888,891 →
Needle Comb Reticle Pattern for Critical Dimension and Registration Measurements Using a Registration Tool and Methods for Using Same
Application:
09/874,615 →
Integrated Decoupling Capacitors
Application:
09/852,668 →
Reducing Asymmetrically Deposited Film Induced Registration Error
Application:
09/816,861 →
Method and Apparatus for the Fabrication of Ferroelectric Films
Application:
09/810,368 →
Method for Removing Organic Material from a Substrate and for Oxidizing Oxidizable Material Thereon
Application:
09/798,806 →
Method and Apparatus for Controlling Access to a Communication Channel
Application:
09/784,979 →
Real-Time System for Measuring the Ricean K-Factor
Application:
09/777,783 →