Granted Patent B2

US 7,230,679 · App. 11/397,176 · Granted Jun 12, 2007

Abstract

Claims (63)

1. A method for processing a microelectronic substrate, the method comprising:

directing a radiation beam from a radiation source along a radiation path to an adaptive structure, the radiation beam having a first generally uniform distribution of intensity as a function of location in a plane generally transverse to the radiation path;

changing an intensity distribution of the radiation beam from the first distribution to a second distribution different than the first distribution by changing a reflection angle of a first portion of the adaptive structure relative to a reflection angle of a second portion of the adaptive structure;

directing the radiation beam away from the adaptive structure and through a reticle positioned between the adaptive structure and the microelectronic substrate; and

impinging the radiation beam on the microelectronic substrate.

2. The method of claim 1 wherein the adaptive structure includes a reflective surface having a first portion coupled to a first actuator and a second portion coupled to a second actuator, and wherein:

directing a radiation beam from a radiation source along a radiation path to an adaptive structure comprises impinging a first portion of the radiation beam on the first portion of the reflective surface and impinging a second portion of the radiation beam on the second portion of the reflective surface; and

changing a reflection angle of a first portion of the adaptive structure relative to a reflection angle of a second portion of the adaptive structure comprises moving the first portion of the reflective surface relative to the second portion of the reflective surface.

3. The method of claim 2 , further comprising:

reflecting at least part of the first portion of the radiation beam toward a first portion of a grating having a first transmissivity and reflecting at least part of the second portion of the radiation beam toward a second portion of the grating having a second transmissivity greater than the first transmissivity; and

passing at least part of the second portion of the radiation beam through the grating to impinge on the microelectronic substrate.

4. The method of claim 1 wherein impinging the radiation beam on the microelectronic substrate includes impinging the radiation beam on a radiation-sensitive layer of the microelectronic substrate.

5. The method of claim 1 wherein impinging the radiation beam on the microelectronic substrate includes impinging the radiation beam on a photoresist layer of the microelectronic substrate.

6. The method of claim 1 wherein directing the radiation beam away from the adaptive structure and through a reticle comprises passing the radiation beam through a reticle to form an image on the microelectronic substrate, and wherein the method further comprises:

scanning the reticle and the microelectronic substrate relative to each other by moving the reticle along a reticle path generally normal to the radiation path proximate to the reticle and moving the microelectronic substrate along a substrate path in a direction opposite the reticle and generally normal to the radiation path.

7. The method of claim 1 wherein directing the radiation beam away from the adaptive structure and through a reticle comprises passing the radiation beam through a reticle to form an image on the microelectronic substrate, and wherein the method further comprises:

stepping the microelectronic substrate and the reticle relative to each other by impinging the radiation on a first field of the microelectronic substrate while the microelectronic substrate is in a first fixed transverse alignment relative to the reticle, moving at least one of the reticle and the microelectronic substrate transversely relative to the other to align a second field with the reticle, and exposing the second field to the radiation while the microelectronic substrate is in a second fixed transverse alignment relative to the reticle.

8. The method of claim 1 wherein changing an intensity distribution of the radiation beam from the first distribution to the second distribution comprises changing each portion of the second distribution by no more than about ten percent relative to the corresponding portion of the first distribution.

9. The method of claim 1 wherein changing an intensity distribution of the radiation beam from the first distribution to the second distribution comprises changing each portion of the second distribution by no more than about five percent relative to the corresponding portion of the first distribution.

10. The method of claim 1 wherein impinging the radiation beam on the microelectronic substrate includes irradiating a first portion of the microelectronic substrate with radiation at a first intensity and irradiating a second portion of the microelectronic substrate with radiation at a second intensity, the second portion of the microelectronic substrate being spaced apart from the first portion of the microelectronic substrate by a distance of about 0.3 millimeters or greater.

11. The method of claim 1 wherein the radiation beam has an average intensity after being directed away from the adaptive structure, and wherein impinging the radiation beam on the microelectronic substrate includes impinging radiation with a higher than average intensity on a first field of the microelectronic substrate and impinging radiation with a lower than average intensity on a second field of the microelectronic substrate.

12. The method of claim 1 wherein the radiation beam has an average intensity after being directed away from the adaptive structure, and wherein impinging the radiation beam on the microelectronic substrate includes impinging radiation with a higher than average intensity on a first microelectronic die of the microelectronic substrate and impinging radiation with a lower than average intensity on a second microelectronic die of the microelectronic substrate.

13. The method of claim 1 , further comprising changing a shape of the radiation beam after impinging the radiation beam on the adaptive structure.

14. The method of claim 1 wherein the microelectronic substrate is a first microelectronic substrate having a layer of radiation-sensitive material, and wherein directing the radiation beam away from the adaptive structure and through a reticle comprises passing the radiation beam through a reticle to form an image on the microelectronic substrate, and wherein the method further comprises:

forming features in the first microelectronic substrate based on the image formed on the radiation sensitive material;

determining characteristics of the features formed in the first microelectronic substrate;

based on the determined characteristics, changing an intensity distribution of the radiation beam from the first distribution to a third distribution different than the first and second distributions by changing a reflection angle of at least one of the first and second portions of the adaptive structure; and

impinging the radiation beam with the third intensity distribution on a second microelectronic substrate.

15. A method for directing radiation toward a microelectronic substrate, the method comprising:

directing a radiation beam along a radiation path to a reflective medium, a first portion of the radiation beam being impinged on a first portion of a reflective medium and a second portion of the radiation beam being impinged on a second portion of the reflective medium;

moving the first portion of the reflective medium relative to the second portion of the reflective medium to (a) direct the first portion of the radiation beam at a first angle relative to the radiation path to a first portion of a selectively transmissive medium, and (b) direct the second portion of the radiation beam at a second angle relative to the radiation path to a second portion of the selectively transmissive medium, wherein each of the first and second portions of the selectively transmissive medium have a transmissivity that is changeable from a first transmissivity to a second transmissivity different than the first transmissivity, at least one of the first and second portions being configured to change from the first transmissivity to the second transmissivity without becoming opaque; and

directing at least part of one of the first and second portions of the radiation beam through the selectively transmissive medium to impinge on the microelectronic substrate, while at least inhibiting passage of at least part of the other of the first and second portions of the radiation beam through the selectively transmissive medium.

16. The method of claim 15 wherein the radiation beam has a first intensity distribution in a plane generally normal to the radiation path before impinging upon the reflective medium, and wherein the method further comprises changing an intensity distribution of the radiation beam directed through the selectively transmissive medium from the first intensity distribution to a second intensity distribution different than the first intensity distribution.

17. The method of 16 , further comprising smoothing the second intensity distribution by passing the radiation beam through a diffuser after directing the radiation beam through the selectively transmissive medium and before impinging the radiation beam on the microelectronic substrate.

18. The method of claim 15 , further comprising passing the radiation beam through a reticle after directing at least part of one of the first and second portions of the radiation beam through the selectively transmissive medium and before impinging the radiation beam on the microelectronic substrate.

19. The method of claim 15 wherein the microelectronic substrate has a layer of radiation-sensitive material and wherein directing at least part of one of the first and second portions of the radiation beam through the selectively transmissive medium to impinge on the microelectronic substrate includes impinging the radiation beam on the radiation-sensitive material.

20. The method of claim 15 , further comprising selecting the radiation beam to have a wavelength of about 365 nanometers or less.

21. The method of claim 15 wherein the selectively transmissive medium comprises a grating, and wherein:

directing the first and second portions of the radiation beam to corresponding first and second portions of the selectively transmissive medium comprises (a) directing the first portion of the radiation beam to a first portion of the grating having a first transmissivity, and (b) directing the second portion of the radiation beam to a second portion of the grating having a second transmissivity greater than the first transmissivity; and

directing at least part of the second portion of the radiation beam through the selectively transmissive medium comprises directing at least part of the second portion of the radiation beam through the second portion of the grating while attenuating and/or blocking at least part of the first portion of the radiation beam from passing through the grating.

22. The method of claim 21 , further comprising selecting the grating to have an open area of at least about 90 percent.

23. The method of claim 15 wherein moving the first portion of the reflective medium relative to the second portion of the reflective medium comprises tilting a first reflective element of the reflective medium relative to the radiation path to an angle different than an angle between the radiation path and a second reflective element of the reflective medium.

24. The method of claim 15 wherein the selectively transmissive medium comprises a liquid crystal material, and wherein the method further comprises changing a first portion of the liquid crystal material to have a first transmissivity without making the first portion opaque and changing a second portion of the liquid crystal material to have a second transmissivity greater than the first portion before directing at least part of one of the first and second portions of the radiation beam through the liquid crystal material.

25. A method for directing a radiation beam from a radiation source along a radiation path toward a microelectronic substrate, the radiation beam having a first distribution of intensity as a function of location in a plane generally transverse to the radiation path, the method comprising:

impinging a first portion of the radiation beam on a first portion of a reflective medium and a second portion of the radiation beam on a second portion of the reflective medium;

tilting the first portion of the reflective medium relative to the second portion of the reflective medium to change an intensity distribution of the radiation beam from the first distribution to a second distribution different than the first distribution;

reflecting at least part of the first portion of the radiation beam toward a first portion of a grating having a first transmissivity and reflecting at least part of the second portion of the radiation beam toward a second portion of the grating having a second transmissivity greater than the first transmissivity; directing at least part of the second portion of the radiation beam through the grating to a

reticle positioned between the selectively transmissive medium and the microelectronic substrate while attenuating and/or blocking at least part of the first portion of the radiation beam from passing through the grating; and

impinging the portion of the radiation beam passed through the grating and the reticle on the microelectronic substrate.

26. A method for processing a microelectronic substrate, the method comprising:

directing a radiation beam from a radiation source along a radiation path to an adaptive structure, the radiation beam having a first distribution of intensity as a function of location in a plane generally transverse to the radiation path;

changing an intensity distribution of the radiation beam from the first distribution to a second distribution different than the first distribution by changing a reflection angle of a first portion of the adaptive structure relative to a reflection angle of a second portion of the adaptive structure;

directing the radiation beam away from the adaptive structure and through a reticle positioned between the adaptive structure and the microelectronic substrate; and

impinging the radiation beam on the microelectronic substrate, wherein impinging the radiation beam on the microelectronic substrate includes irradiating a first portion of the microelectronic substrate with radiation at a first intensity and irradiating a second portion of the microelectronic substrate with radiation at a second intensity, the second portion of the microelectronic substrate being spaced apart from the first portion of the microelectronic substrate by a distance of about 0.3 millimeters or greater.

27. A method for processing microelectronic substrates, the method comprising:

directing a radiation beam from a radiation source along a radiation path to an adaptive structure, the radiation beam having a first distribution of intensity as a function of location in a plane generally transverse to the radiation path;

changing an intensity distribution of the radiation beam from the first distribution to a second distribution different than the first distribution by changing a reflection angle of a first portion of the adaptive structure relative to a reflection angle of a second portion of the adaptive structure;

directing the radiation beam away from the adaptive structure and through a reticle positioned between the adaptive structure and the microelectronic substrate;

forming an image on a surface of a first microelectronic substrate;

forming features in the first microelectronic substrate based on the image;

determining characteristics of the features formed in the first microelectronic substrate;

based on the determined characteristics, changing an intensity distribution of the radiation beam from the first distribution to a third distribution different than the first and second distributions by changing a reflection angle of at least one of the first and second portions of the adaptive structure; and

impinging the radiation beam with the third intensity distribution on a second microelectronic substrate.

Assignments (9)