Integrated circuit well bias circuity
View Patent ↗Well bias circuitry for selectively biasing the voltages of the well areas of an integrated circuit. In one embodiment, the well bias circuitry includes a switching cell located in a row of cells of the integrated circuit for selectively coupling a voltage supply line to a well bias line. The switching cell may include two level shifters, each for providing a voltage to a gate of a coupling transistor to make the coupling transistor non conductive in response to an enable signal. The switching cells may be sequentially coupled such that the coupling transistors of each of the switching cells are not made conductive at the same time so as to reduce inrush current due to changing the well bias from a well bias voltage to a supply voltage. In one example, the switching cells may include delay circuitry for delaying the change in state of the enable signal before being provided to the next switching cell.
1. An integrated circuit comprising:
a plurality of rows of cells, each row of cells of the plurality of rows of cells including a P well area and an N well area;
a plurality of P well bias contacts to bias the P well areas;
a plurality of N well bias contacts to bias the N well areas;
a first plurality of lines to carry a first voltage;
a second plurality of lines to carry a second voltage;
a plurality of switching cells, each switching cell is located in a row of cells of the plurality and is coupled to a line of the first plurality of lines, a line of the second plurality of lines, an N well bias contact of the plurality of N well bias contacts, and a P well bias contact of the plurality of P well bias contacts, each of the plurality of switching cells includes a control input, wherein in response to the control input being at a first state, the switching cell couples the line of the first plurality of lines to the N well bias contact of the plurality of N well bias contacts and couples the line of the second plurality of lines to the P well bias contact of the plurality of P well bias contacts.
2. The integrated circuit of claim 1 wherein the plurality of switching cells further comprises a first switching cell and a second switching cell, the first switching cell further includes a control output responsive to a control input of the first switching cell, a control input of the second switching cell is coupled to the control output of the first switching cell.
3. The integrated circuit of claim 2 wherein the plurality of switching cells further includes a third switching cell having a control input coupled to a control output of the second switch circuit.
4. The integrated circuit of claim 2 wherein the first switching cell includes a delay circuit between the control input of the first switching cell and the control output of the first switching cell, the delay circuit providing a delay in a change in state of the control output of the first switching cell with respect to a change in state of a control input of the first switching cell.
5. The integrated circuit of claim 1 wherein the plurality of switching cells each include a first switch and a second switch, wherein the first switch, when conductive, couples the line of the first plurality of lines to the N well bias contact, wherein the second switch, when conductive, couples the line of the second plurality of lines to the P well bias contact, wherein the conductivity of the first switch and the second switch is controlled by the control input.
6. The integrated circuit of claim 5 wherein each switching cell further comprises a first level shifter and a second level shifter, wherein in response to the control input being at a second state, the first level shifter provides a voltage to a gate of the first switch equal to an N well bias voltage to make the first switch non conductive, the N well bias voltage is different from the first voltage, and wherein in response to the control input being at the second state, the second level shifter provides a voltage to a gate of the second switch equal to a P well bias voltage to make the second switch non conductive, the P well bias voltage being different from the second voltage.
7. The integrated circuit of claim 1 wherein the plurality of switching cells are in a non uniform pattern in the plurality of rows of cells.
8. The integrated circuit of claim 1 wherein the plurality of rows of cells includes a plurality of areas wherein a switching cell of the plurality is located in each area of the plurality of areas.
9. The integrated circuit of claim 1 wherein when the control inputs are at a first state, the N well areas are biased at the first voltage and the P well areas arc biased at the second voltage, wherein when the control inputs are at a second state, the N well areas are biased at third voltage different from the first voltage and the P well area are biased at fourth voltage different from the second voltage.
10. The integrated circuit of claim 9 wherein the third voltage is higher than the first voltage and the second voltage is higher than the fourth voltage.
11. The integrated circuit of claim 1 wherein the integrated circuit includes a processor, the processor including circuitry implemented in rows of cells of the plurality of rows of cells.
12. The integrated circuit of claim 1 wherein the plurality off rows of cells includes CMOS translators.
13. The integrated circuit of claim 1 further comprising:
a controller having an output coupled to a control input of a first switching cell of the plurality of switching cells, the controller having an input coupled to a control register, wherein the state of the output of the controller is responsive to the state of its input.
14. The integrated circuit of claim 1 further comprising:
a first voltage generating circuit having an output coupled to the plurality of N well bias contacts, wherein when activated, the first voltage generating circuit provides at its output a third voltage, wherein when the control input is at the first state, the output of the first voltage generating circuit is tri-stated;
a second voltage generating circuit having an output coupled to the plurality of P well bias contacts, wherein when activated, the second voltage generating circuit provides at its output a fourth voltage, wherein when the control input is at the first state, the output of the second voltage generating circuit is tri-stated.
15. The integrated circuit of claim 1 further comprising:
a third plurality of lines, each line of the third plurality is coupled to an N well bias contact of the plurality of N well bias contacts;
a fourth plurality of lines, each line of the fourth plurality is coupled to a P well bias contact of the plurality of P well bias contacts;
wherein each switching cell is coupled to a line of the third plurality of lines and a line of the fourth plurality of lines, wherein in response to the control input being at the first state, the switching cell couples the line of the first plurality of lines to the line of the third plurality of lines and couples the line of the second plurality of lines to the line of the fourth plurality of lines.
16. The Integrated circuit of claim 15 further comprising:
a plurality of tie cells, each tie cell of the plurality of tie cells is located in a row of cells of the plurality of rows of cells;
wherein each tie cell of the plurality of tie cells include, an N well bias contact to bias an N well area, the N well bias contact is coupled to one of the third plurality of lines, and each tie cell of the plurality of tie cells includes a P well bias contact to bias a P well area, the P well bias contact is coupled to one of the fourth plurality of lines.