Multi-die semiconductor package
View Patent ↗A multi-die semiconductor package having an electrical interconnect frame. A top integrated circuit die is attached to the top side of an upper contact level of the frame and a bottom integrated circuit die is attached to the bottom side of the upper contact level of the frame. The die bond pads of the top die are electrically coupled (e.g. wired bonded) to pads of a lower contact level of the interconnect frame. The die bond pads of the bottom integrated circuit die are electrically coupled (e.g. wired bonded) to bond pads of the upper contact level of the frame. The bond pads of the lower contact level serve as external bond pads for the package. The frame may include inset structures, each having an upper portion located in the upper contact level and a lower portion located in the lower contact level.
1. A semiconductor package comprising:
an electrical interconnect frame having a top electrical contact level and a bottom electrical contact level, the top electrical contact level substantially parallel to and offset from the bottom electrical contact level, each of the top and bottom electrical contact levels having both a top surface and a bottom surface,
a first integrated circuit die attached to a top surface of the top electrical contact level;
a second integrated circuit die attached to a bottom surface of the top electrical contact level;
a conductor having a first end connected to a pad on the second integrated circuit die and having a second end connected to a bottom surface of a structure of the top electrical contact level; and
a first wire having a first end connected to a pad on the first integrated circuit die and having a second end connected to a top surface of a structure of the bottom electrical contact level.
2. The semiconductor package of claim 1 , further comprising a second wire having a first end connected to a second pad on the first integrated circuit die and having a second end connected to a top surface of a structure of the top electrical contact level.
3. The semiconductor package of claim 1 , wherein the conductor is characterized as being a wire.
4. The semiconductor package of claim 1 , wherein the conductor is characterized as being reflowed solder.
5. The semiconductor package of claim 1 , further comprising an adhesive bleed control ring on the top surface of the top electrical contact level for containing an adhesive used to attach the first integrated circuit die to the top surface of the top electrical contact level.
6. The semiconductor package of claim 1 , wherein the first integrated circuit die includes digital circuitry and the second integrated circuit die includes analog circuitry.
7. The semiconductor package of claim 1 , wherein an active surface of the first integrated circuit die is about to 0.5 millimeter or greater from an active surface of the second integrated circuit die.
8. The semiconductor package of claim 1 , wherein the first integrated circuit die is attached to an X-flag of the top electrical contact level.
9. The semiconductor package of claim 1 , wherein the first integrated circuit die, the second integrated circuit die, and at least a portion of the electrical interconnect frame are encapsulated with a non electrically conductive encapsulation material.
10. The semiconductor package of claim 9 , wherein the bottom electrical contact level includes a plurality of pads that extend from the encapsulation material, the plurality of pads for electrically coupling the semiconductor package to a circuit board.
11. The semiconductor package of claim 10 , wherein the plurality of pads are plated with one of gold, silver, nickel, and palladium.
12. The semiconductor package of claim 1 wherein the electrical interconnect frame further comprises an inset structure, the inset structure including a top portion located in the top electrical contact level and a bottom portion located in the bottom electrical contact level, wherein the second end of the conductor is connected to a bottom surface of the top portion.
13. The semiconductor package of claim 12 wherein:
the first integrated circuit die, the second integrated circuit die, and at least a portion of the electrical interconnect frame are encapsulated with a non electrically conductive encapsulation material; and
the bottom portion of the inset structure extends from the encapsulation material.
14. The semiconductor package of claim 1 wherein the bottom electrical contact level includes a plurality of pads electrically isolated from each other.
15. A semiconductor package comprising:
a metal electrical interconnect frame including a substantially planar top electrical contact level having a first plurality of pads and including a substantially planar bottom electrical contact level having a second plurality of pads, the top electrical contact level substantially parallel to and offset from the bottom electrical contact level, both of the top and bottom electrical contact levels having a top surface and a bottom surface;
a first integrated circuit die having a top surface and a bottom surface, the bottom surface of the first integrated circuit die attached to the top surface of the top electrical contact level, the top surface of the first integrated circuit die having a plurality of pads wire bonded to the second plurality of pads; and
a second integrated circuit die having a top surface and a bottom surface, the bottom surface of the second integrated circuit die attached to a bottom surface of the top electrical contact level, the top surface of the second integrated circuit die having a plurality of pads wire bonded to the first plurality of pads.
16. The semiconductor package of claim 15 , wherein the first integrated circuit die includes digital circuitry and the second integrated circuit die includes analog circuitry.
17. The semiconductor package of claim 15 , wherein the top surface of the first integrated circuit die is about 0.5 millimeter or greater from the top surface of the second integrated circuit die.
18. The semiconductor package of claim 15 , wherein the first and second plurality of pads are plated with one of gold, silver, nickel, and palladium.
19. The semiconductor package of claim 15 , wherein the first integrated circuit die is attach to an X-flag of the top electrical contact level.
20. The semiconductor package of claim 15 , wherein the first integrated circuit die, the second integrated circuit die, and at least a portion of the electrical interconnect frame are encapsulated with a non-conducting encapsulation material.
21. The semiconductor package of claim 20 , wherein the second plurality of pads extend from the encapsulation material, the second plurality of pads for electrically coupling the semiconductor package to a circuit board.
22. The semiconductor package of claim 15 wherein:
the interconnect frame includes a plurality of inset structures;
each of the first plurality of pads is part of an inset structure of the plurality of inset structures, wherein each of the inset structures includes a bottom portion located in the bottom electrical contact level.
23. The semiconductor package of claim 22 wherein:
the first integrated circuit die, the second integrated circuit die, and at least a portion of the electrical interconnect frame are encapsulated with a non electrically conductive encapsulation material;
the second plurality of pads extend from the encapsulation material, the second plurality of pads for electrically coupling the semiconductor package to a printed circuit board;
the bottom portion of each inset structure of the plurality extends from the encapsulation material, the bottom portion of each inset structure of the plurality for electrically coupling the semiconductor package to a circuit board.