Granted Patent B1

US 6,960,529 · App. 10/373,911 · Granted Nov 1, 2005

Abstract

Claims (45)

1. A method for fabricating a multiple-layered semiconductor interconnect device in which one metal layer is connected to another metal layer using one or more vias having metal interconnect sidewall protection against unlanded vias, the protection provided using a single barrier metal or compound without requiring Chemical Vapor Deposition (CVD) processes, the method comprising the following:

an act of forming a metal interconnect component;

an act of depositing a single barrier metal or compound directly on at least a portion of the metal interconnect component including at least a portion of a sidewall of the metal interconnect component using a Physical Vapor Deposition (PVD) process;

an act of forming a dielectric layer over the metal interconnect component and the single barrier metal or compound layer such that the dielectric layer is in direct contact with the single barrier metal or compound;

an act of etching an unlanded via through the dielectric layer to the metal interconnect component so that the single barrier metal or compound that covers at least a portion of the sidewall of the metal interconnect component is exposed at the sidewall of the metal interconnect component; and

an act of filling the unlanded via with a second metal to thereby allow the metal interconnect component to electrically connect with one or more upper metal layers.

2. A method in accordance with claim 1 , further comprising the following after the act of etching and before the act of filling:

an act of depositing a barrier metal on sidewalls of the unlanded via using a PVD process.

3. A method in accordance with claim 1 , further comprising the following before the act of forming a dielectric layer:

an act of anisotropically etching the single barrier metal or compound.

4. A method in accordance with claim 1 , wherein the act of forming a metal interconnect component composed of a first metal comprises the following:

an act of forming the metal interconnect component at least partially out of Aluminum.

5. A method in accordance with claim 1 , wherein the single barrier metal or compound is a material selected from the group consisting of Titanium Nitride, Titanium, Tantalum, Tantalum Nitride, and alloys of Titanium Nitride, Titanium, Tantalum, and Tantalum Nitride.

6. A method in accordance with claim 5 , wherein the act of filling the unlanded via with a second metal to thereby allow the metal interconnect component to electrically connect with one or more upper metal layers comprises the following:

an act of filling the unlanded via with Tungsten or any alloy of Tungsten.

7. A method in accordance with claim 1 , wherein the act of filling the unlanded via with a second metal to thereby allow the metal interconnect component to electrically connect with one or more upper metal layers comprises the following:

an act of filling the unlanded via with Tungsten or any alloy of Tungsten.

8. A method in accordance with claim 1 , wherein the act of forming a metal interconnect component composed of a first metal comprises the following:

an act of forming the metal interconnect component out of Copper.

9. A method in accordance with claim 1 , wherein the act of depositing a single barrier metal or compound directly on at least a portion of the metal interconnect component including at least a portion of a sidewall of the metal interconnect component using a Physical Vapor Deposition (PVD) process comprises the following:

an act of sputtering the single barrier metal or compound on the at least a portion of the metal interconnect component.

10. A method in accordance with claim 1 , wherein the act of depositing a single barrier metal or compound directly on at least a portion of the metal interconnect component including at least a portion of a sidewall of the metal interconnect component using a Physical Vapor Deposition (PVD) process comprises the following:

an act of depositing the single barrier metal or compound to a maximum thickness of between one hundred and one thousand Angstroms.

11. A method in accordance with claim 1 , wherein the act of forming a metal interconnect component composed of a first metal comprises the following:

an act of forming a Titanium Nitride bottom layer;

an act of forming an Aluminum metal layer on the Titanium Nitride bottom layer;

an act of forming a Titanium Nitride anti-reflective coating on the Aluminum metal layer; and

an act of patterning the Titanium Nitride bottom layer, the Aluminum metal layer, and the Titanium Nitride anti-reflective coating.

12. A method for fabricating a multiple-layered semiconductor interconnect device in which one metal layer is connected to another metal layer using one or more vias having metal interconnect sidewall protection against unlanded vias, the protection provided using a single barrier metal or compound without requiring Chemical Vapor Deposition (CVD) processes, the method comprising the following:

an act of forming a metal interconnect component composed of Aluminum

an act of depositing a single barrier metal or compound directly on at least a portion of the metal interconnect component including at least a portion of a sidewall of the metal interconnect component using a Physical Vapor Deposition (PVD) process, the single barrier metal or compound being a material selected from the group consisting of Titanium Nitride, Titanium, Tantalum, Tantalum Nitride, and alloys of Titanium Nitride, Titanium, Tantalum, and Tantalum Nitride;

an act of anisotropically etching the single barrier metal or compound;

after anisotropically etching the single barrier metal or compound, an act of forming a dielectric layer over the metal interconnect component and the single barrier metal or compound;

an act of forming a dielectric layer over the metal interconnect component and the single barrier metal layer or compound such that the dielectric layer is in direct contact with the single barrier metal or compound;

an act of etching an unlanded via through the dielectric layer to the metal interconnect component so that the single barrier metal or compound that covers at least a portion of the sidewall of the metal interconnect component is exposed at the sidewall of the metal interconnect component; and

an act of filling the unlanded via with Tungsten or an alloy of Tungsten to thereby allow the metal interconnect component to electrically connect with one or more upper metal layers.

13. A method in accordance with claim 12 , wherein the act of depositing a single barrier metal or compound directly on at least a portion of the metal interconnect component including at least a portion of a sidewall of the metal interconnect component using a Physical Vapor Deposition (PVD) process comprises the following:

an act of sputtering the single barrier metal or compound on the at least a portion of the metal interconnect component.

14. A method in accordance with claim 12 , wherein the act of depositing a single barrier metal or compound directly on at least a portion of the metal interconnect component including at least a portion of a sidewall of the metal interconnect component using a Physical Vapor Deposition (PVD) process comprises the following:

an act of depositing the single barrier metal or compound to a maximum thickness of between one hundred and one thousand Angstroms.

15. A method in accordance with claim 12 , wherein the act of forming a metal interconnect component composed of a first metal comprises the following:

an act of forming a Titanium Nitride bottom layer;

an act of forming an Aluminum metal layer on the Titanium Nitride bottom layer;

an act of forming a Titanium Nitride anti-reflective coating on the Aluminum metal layer; and

an act of patterning the Titanium Nitride bottom layer, the Aluminum metal layer, and the Titanium Nitride anti-reflective coating.

Assignments (13)