Semiconductor component
View Patent ↗A semiconductor component comprises a first semiconductor region ( 110, 310 ), a second semiconductor region ( 120, 320 ) above the first semiconductor region, a third semiconductor region ( 130, 330 ) above the second semiconductor region, a fourth semiconductor region ( 140, 340 ) above the third semiconductor region, a fifth semiconductor region ( 150, 350 ) above the second semiconductor region and at least partially contiguous with the fourth semiconductor region, a sixth semiconductor region ( 160, 360 ) above and electrically shorted to the fifth semiconductor region, and an electrically insulating layer ( 180, 380 ) above the fourth semiconductor region and the fifth semiconductor region. A junction ( 145, 345 ) between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction, which is located only underneath the electrically insulating layer. In one embodiment, a seventh semiconductor region ( 170 ) circumscribes the third, fourth, fifth, and sixth semiconductor regions.
1. A semiconductor component comprising:
a first semiconductor region having a first conductivity type;
a second semiconductor region having a second conductivity type located above the first semiconductor region;
a third semiconductor region located above the second semiconductor region;
a fourth semiconductor region located above the third semiconductor region and having a conductivity type;
a fifth semiconductor region having a conductivity type different from the conductivity type of the fourth semiconductor region and located above the second semiconductor region and at least partially contiguous with the fourth semiconductor region;
a sixth semiconductor region having the conductivity type of the fifth semiconductor region and located above and electrically shorted to the fifth semiconductor region;
a seventh semiconductor region having the second conductivity type, at least partially contiguous with the second semiconductor region, and circumscribing the third semiconductor region, the fourth semiconductor region, the fifth semiconductor region, and the sixth semiconductor region; and
an electrically insulating layer above the fourth semiconductor region and the fifth semiconductor region,
wherein:
a junction between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction;
the fifth semiconductor region has a doping level lower than doping levels of the second semiconductor region, the fourth semiconductor region, the sixth semiconductor region, and the seventh semiconductor region;
the third semiconductor region has a doping level lower than the doping level of the fifth semiconductor region; and
the zener diode junction is located only underneath the electrically insulating layer.
2. The semiconductor component of claim 1 wherein:
the zener diode junction has a breakdown voltage of between approximately five and six volts.
3. The semiconductor component of claim 1 wherein:
the sixth semiconductor region is self-aligned to the electrically insulating layer.
4. The semiconductor component of claim 1 wherein:
the fourth semiconductor region is self-aligned to the electrically insulating layer.
5. The semiconductor component of claim 1 wherein:
the fourth semiconductor region has the first conductivity type; and
the fifth semiconductor region and the sixth semiconductor region have the second conductivity type.
6. The semiconductor component of claim 1 wherein:
the fourth semiconductor region has the second conductivity type; and
the fifth semiconductor region and the sixth semiconductor region have the first conductivity type.
7. The semiconductor component of claim 1 wherein:
the fourth semiconductor region has a maximum function depth of less than approximately 0.4 micrometers, and less than a junction depth of the fifth semiconductor region and the seventh semiconductor region.
8. The semiconductor component of claim 7 wherein:
the fourth semiconductor region has a doping concentration between approximately 5×10 19 and 1×10 20 atoms per cubic centimeter.
9. The semiconductor component of claim 1 wherein:
the fifth semiconductor region has a maximum junction depth less than a junction depth of the seventh semiconductor region.
10. The semiconductor component of claim 9 wherein:
the fifth semiconductor region has a doping concentration between approximately 1×10 18 and 5×10 19 atoms per cubic centimeter.
11. The semiconductor component of claim 1 wherein:
the fifth semiconductor region circumscribes the fourth semiconductor region; and
the sixth semiconductor region circumscribes the fourth semiconductor region.
12. The semiconductor component of claim 11 wherein:
the fifth semiconductor region circumscribes a portion of the third semiconductor region.
13. The semiconductor component of claim 1 wherein:
a first portion of the third semiconductor region is located between the fifth semiconductor region and the second semiconductor region; and
a second portion of the third semiconductor region is located between the fourth semiconductor region and the second semiconductor region.
14. The semiconductor component of claim 1 wherein:
the fourth semiconductor region and the fifth semiconductor region form at least a portion of a zener diode; and
the second semiconductor region and the seventh semiconductor region electrically isolate the zener diode from the first semiconductor region.
15. The semiconductor component of claim 1 wherein:
the third semiconductor region, the fourth semiconductor region, the fifth semiconductor region, the sixth semiconductor region, and the seventh semiconductor region are symmetric about a line drawn through a geometric center of the fourth semiconductor region.
16. The semiconductor component of claim 1 wherein:
the zener diode junction is used in the semiconductor component to provide a voltage clamp.
17. A semiconductor component comprising:
a first semiconductor region having a first conductivity type;
a second semiconductor region having a second conductivity type located above the first semiconductor region;
a third semiconductor region located above the second semiconductor region;
a fourth semiconductor region having the first conductivity type located above the third semiconductor region;
a fifth semiconductor region having the second conductivity type located above the second semiconductor region, circumscribing the third semiconductor region and the fourth semiconductor region, and at least partially contiguous with the fourth semiconductor region and the second semiconductor region;
a sixth semiconductor region having the second conductivity type and electrically coupled to the fifth semiconductor region; and
an electrically insulating layer above the fourth semiconductor region and the fifth semiconductor region,
wherein:
a junction between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction;
the fifth semiconductor region has a doping level lower than a doping level of the fourth semiconductor region;
the third semiconductor region has a doping level lower than doping levels of the second semiconductor region, the fourth semiconductor region, the fifth semiconductor region, and the sixth semiconductor region; and
the zener diode junction is located only underneath the electrically insulating layer.
18. The semiconductor component of claim 17 wherein:
the zener diode junction has a breakdown voltage of between approximately five and six volts.
19. The semiconductor component of claim 17 wherein:
the fourth semiconductor region has a maximum junction depth of less than approximately 0.4 micrometers, and less than a junction depth of the fifth semiconductor region.
20. The semiconductor component of claim 19 wherein:
the fourth semiconductor region has a doping concentration between approximately 5×10 19 and 1×10 20 atoms per cubic centimeter.
21. The semiconductor component of claim 17 wherein:
the fifth semiconductor region has a doping concentration between approximately 1×10 18 and 5×10 19 atoms per cubic centimeter.
22. The semiconductor component of claim 17 wherein:
the third semiconductor region, the fourth semiconductor region, the fifth semiconductor region, and the sixth semiconductor region are asymmetric about a line drawn through a geometric center of the fourth semiconductor region.
23. The semiconductor component of claim 17 wherein:
the zener diode junction is used in the semiconductor component to provide a reference voltage.