Multi-fault protected high side switch with current sense
View Patent ↗An integrated high side switch with multi-fault protection. When a fault condition is detected, the switch is turned off. The switch includes a pair of transistors that are connected such that the source of the first transistor is connected with the source of the second transistor. The drain of the first transistor is thus connected to the supply voltage. A first current mirror generates a current sense output. A second current mirror generates an internal current to detect an over current fault condition. The transistors in the current mirrors are connected like the switch transistors. A high voltage operational amplifier and a transistor are used as feedback to insure that the voltage at the output of the current mirrors matches the voltage at the output of the switch. This ensures that the current mirrors generate scaled versions of the current flowing through the switch.
1. An integrated semiconductor device for use in an electrical system between a power supply and a load such that current is delivered through the integrated semiconductor device to the load, the integrated semiconductor device comprising:
a switch including:
a first transistor having a source and a drain, wherein the drain is connected with a supply voltage;
a second transistor connected in series with the first transistor, wherein a source of the second transistor is electrically connected with the source of the first transistor; and
one or more control inputs used to receive control signals, wherein the control signals turn the first transistor and the second transistor on and off thereby turning the switch on or off;
a first resistor having a first terminal coupled to the drain of the first transistor and the supply voltage and having a second terminal coupled to a bulk terminal of the first transistor; and
a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor.
2. An integrated semiconductor device as defined in claim 1 , further comprising a current mirror that mirrors a current delivered through the switch, wherein the current mirror is turned on and off by the control signals and includes a third transistor having a source that is connected with a source of a fourth transistor.
3. An integrated semiconductor device as defined in claim 1 , further comprising a current mirror that mirrors a current delivered through the switch, and further comprising a feedback circuit connecting an output of the switch with an output of the current mirror, wherein the feedback circuit ensures that an output voltage of the switch is equal to an output voltage of the current mirror such that the current of the current mirror is a scaled version of a current delivered through the switch.
4. An integrated semiconductor device as defined in claim 3 , wherein the feedback circuit comprises an operational amplifier and a third transistor, wherein the third transistor in the feedback circuit is electrically connected to the output of the current mirror and wherein an output of the operational amplifier is connected with a gate of the third transistor.
5. An integrated semiconductor device for use in an electrical system between a power supply and a load such that current is delivered through the integrated semiconductor device to the load, the integrated semiconductor device comprising:
a switch including:
a lateral DMOS transistor having a source and a drain, wherein the drain is connected with a supply voltage;
a high voltage extended drain PMOS transistor connected in series with the first transistor, wherein a source of the high voltage extended drain PMOS transistor is electrically connected with the source of the lateral DMOS transistor; and
one or more control inputs used to receive control signals, wherein the control signals turn the lateral DMOS transistor and the high voltage extended drain PMOS transistor on and off thereby turning the switch on or off.
6. An integrated semiconductor device as defined in claim 1 , further comprising a first current mirror that mirrors a current delivered through the switch, and further comprising a second current mirror that mirrors the current delivered through the switch and that delivers a second current for use in detecting an over current fault condition.
7. An integrated semiconductor device as defined in claim 6 , wherein the second current mirror comprises a third transistor connected in series with a fourth transistor such that a source of the third transistor is connected with a source of the fourth transistor.
8. An integrated semiconductor device as defined in claim 6 , farther comprising a feedback circuit connected between the switch and the second current mirror such that an output voltage of the switch matches an output voltage of the second current mirror.
9. An integrated semiconductor device as defined in claim 8 , wherein the feedback circuit comprises an operational amplifier and a third transistor, wherein the third transistor of the feedback circuit is connected to the output of the second current mirror.
10. An integrated semiconductor device for use in an electrical system between a power supply and a load such that current is delivered through the integrated semiconductor device to the load, the integrated semiconductor device comprising:
a switch including:
a first transistor having a source and a drain, wherein the drain is connected with a supply voltage;
a second transistor connected in series with the first transistor, wherein a source of the second transistor is electrically connected with the source of the first transistor; and
one or more control inputs used to receive control signals, wherein the control signals turn the first transistor and the second transistor on and off thereby turning the switch on or off, and
a third transistor that shorts the gate and the drain of the second transistor in the switch in a short to battery fault condition.
11. An integrated semiconductor device as defined in claim 10 , further comprising a fourth transistor that shorts the gate and drain of the first transistor in the switch in a short to battery fault condition.
12. An integrated semiconductor device that provides protection from multiple fault conditions, the electrical device comprising:
a switch having a first transistor connected in series with a second transistor, wherein a source of the first transistor is connected with a source of the second transistor, the switch comprising a first resistor having a first terminal coupled to a drain terminal of the first transistor and a supply voltage and having a second terminal coupled to a bulk terminal of the first transistor; and a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor;
a current mirror that generates a current sense output and that mirrors a current delivered through the switch; and
a feedback circuit connecting an output of the switch with an output of the current mirror such that an output voltage of the switch is equal to an output voltage of the current mirror.
13. An integrated semiconductor device as defined in claim 12 , wherein the current mirror comprises a third transistor in series with a fourth transistor, wherein a source of the third transistor is connected with a source of the fourth transistor.
14. An integrated semiconductor device as defined in claim 13 , wherein the third transistor and the fourth transistor of the current mirror are PMOS transistors.
15. An integrated semiconductor device as defined in claim 12 , wherein the switch is turned on and off using control signals received through control inputs.
16. An integrated semiconductor device as defined in claim 12 , wherein the feedback circuit comprises:
a third transistor electrically connected at an output of the current mirror; and
an operational amplifier that drives a gate of the third transistor, wherein an output of the current mirror and an output of the switch are input to the operational amplifier.
17. An integrated semiconductor device as defined in claim 12 , wherein the current mirror is a first current mirror, the device fUrther comprising a second current mirror that generates a second current that is a scaled version of a current delivered through the switch, wherein the second current is used to detect an over current fault condition.
18. An integrated semiconductor device as defined in claim 17 , wherein the feedback circuit is a first feedback circuit, the device further comprising a second feedback circuit connected between the output of the switch and the output of the second current mirror such that a voltage at the output of the switch matches a voltage at the output of the second current mirror.
19. An integrated semiconductor device as defined in claim 18 , wherein the second current generates an over current detection signal when the second current exceeds a threshold current, wherein the over current detection signal causes a microprocessor to generate control signals that turn the switch off, the first current mirror off, and the second current mirror off.
20. An integrated semiconductor device as defined in claim 17 , wherein the second feedback circuit comprises an operational amplifier and a third transistor.
21. An integrated semiconductor device as defined in claim 17 , further comprising a short to battery detection circuit that detects a short to battery fault condition.
22. An integrated semiconductor device as defined in claim 21 , wherein the short to battery circuit generates a short to battery signal when a voltage at the output of the switch is greater than the supply voltage, wherein the short to battery signal causes a microprocessor to generate control signals that shut the switch off, the first current mirror off, and the second current mirror off.
23. An integrated semiconductor device as defined in claim 17 , further comprising an over voltage circuit that generates an over voltage signal when the supply voltage exceeds a reference voltage, wherein the over voltage signal causes a microprocessor to generate control signals that shut the switch off, the first current mirror off, and the second current mirror off.
24. A high side switch with multi-fault protection, the high side switch comprising:
a first transistor and a second transistor in series, wherein a drain of the first transistor is connected with a supply voltage and a source of the first transistor is connected with a source of the second transistor, the switch comprising a first resistor having a first terminal coupled to a drain terminal of the first transistor and a supply voltage and having a second terminal coupled to a bulk terminal of the first transistor; and a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor;
a first current mirror that mirrors current delivered through the first and second transistors by generating a first current that is a scaled version of the current delivered through the first transistor and the second transistor, wherein the first current provided as an output of the high side switch;
a second current mirror that mirrors the current delivered through the first and second transistors by generating a second current that is a scaled version of the current delivered through the first transistor and the second transistor;
an over current protection circuit that monitors the second current, wherein an over current signal is generated that shuts off the high side switch when the second current exceeds a threshold;
a short to battery circuit that generates a short to battery signal that shuts off the high side switch when a voltage at the output of the second transistor exceeds the supply voltage; and
an over voltage current that generates an over voltage signal that shuts off the high side switch when the supply voltage exceeds a threshold voltage.
25. A high side switch as defined in claim 24 , wherein the first current mirror comprises:
a third transistor; and
a fourth transistor, wherein a source of the fourth transistor is connected in series with a source of the third transistor.
26. A high side switch as defined in claim 24 , wherein the second current mirror further comprises:
a third transistor; and
a fourth transistor, wherein a source of the fourth transistor is connected in series with a source of the third transistor.
27. A high side switch as defined in claim 24 , further comprising:
a first feedback circuit connected between a drain of the second transistor and an output of the first current mirror such that a voltage at the drain of the second transistor is equal to a voltage at the output of the first current mirror; and
a second feedback circuit connected between the drain of the second transistor and an output of the second current mirror such that a voltage at the drain of the second transistor is equal to a voltage at the output of the second current mirror.
28. An integrated semiconductor device for use in an electrical system between a power supply and a load such that current is delivered through the integrated semiconductor device to the load, the integrated semiconductor device comprising:
a switch including:
a first transistor having a source and a drain, wherein the drain is connected with a supply voltage;
a second transistor connected in series with the first transistor, wherein a source of the second transistor is electrically connected with the source of the first transistor; and
one or more control inputs used to receive control signals, wherein the control signals turn the first transistor and the second transistor on and off thereby turning the switch on or off;
a first resistor having a first terminal coupled to the drain of the first transistor and the supply voltage and having a second terminal coupled to a bulk terminal of the first transistor; and
a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor; and
a current mirror that mirrors a current delivered through the switch.
29. An integrated semiconductor device that provides protection from multiple fault conditions, the electrical device comprising:
a switch having a first transistor connected in series with a second transistor, wherein a source of the first transistor is connected with a source of the second transistor;
a current mirror that generates a current sense output and that mirrors a current delivered through the switch;
a feedback circuit connecting an output of the switch with an output of the current mirror such that an output voltage of the switch is equal to an output voltage of the current mirror;
a first resistor having a first terminal coupled to the drain of the first transistor and having a second terminal coupled to a bulk terminal of the first transistor; and
a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor.
30. A high side switch as defined in claim 24 , farther comprising:
a first resistor having a first terminal coupled to the drain of the first transistor and the supply voltage and having a second terminal coupled to a bulk terminal of the first transistor; and
a second resistor having a first terminal coupled to the source of the first transistor and the source of the second transistor and having a second terminal coupled to a bulk terminal of the second transistor.