Semiconductor power device with shear stress compensation
View Patent ↗In accordance with one embodiment, a stress buffer ( 40 ) is formed between a power metal structure ( 90 ) and passivation layer ( 30 ). The stress buffer ( 40 ) reduces the effects of stress imparted upon the passivation layer ( 30 ) by the power metal structure ( 90 ). In accordance with an alternative embodiment, a power metal structure ( 130 A) is partitioned into segments ( 1091 ), whereby electrical continuity is maintained between the segments ( 1090 ) by remaining portions of a seed layer ( 1052 ) and adhesion/barrier layer ( 1050 ). The individual segments ( 1090 ) impart a lower peak stress than a comparably sized continuous power metal structure ( 9 ).
1. A semiconductor device comprising:
a first interconnect and a second interconnect over a semiconductor device substrate;
a passivation layer over the first interconnect and the second interconnect and laterally adjacent the first interconnect and the second interconnect;
openings through the passivation layer, wherein a first opening exposes a portion of the first interconnect and a second opening exposes a portion of the second interconnect;
a stress buffer feature only over all portions of the passivation layer that are laterally adjacent the first interconnect and the second interconnect;
a conductive layer overlying all of the first interconnect, the stress buffer feature and the second interconnect, the continuous conductive layer electrically connecting the first interconnect and the second interconnect;
a continuous conductive structure over all of the conductive layer, wherein the continuous conductive structure is electrically coupled to the first interconnect through the first opening and the second interconnect through the second opening; and
a wirebond connected to an exposed surface of the continuous conductive structure for making electrical contact to the semiconductor device.
2. The semiconductor device of claim 1 , wherein the stress buffer feature comprises polyimide.
3. The semiconductor device of claim 1 , wherein an edge region of the continuous conductive structure overlies and contacts a stress buffer feature.
4. The semiconductor device of claim 1 , wherein the continuous conductive structure is further characterized as a power metal structure.
5. The semiconductor device of claim 4 , wherein the power metal structure includes a material selected from the group consisting of copper, nickel, and gold.
6. A semiconductor device comprising:
a first interconnect and a second interconnect overlying a semiconductor device substrate;
a passivation layer over the first interconnect and the second interconnect and laterally adjacent the first interconnect and the second interconnect, the passivation layer having openings to expose a predetermined portion of each of the first interconnect and the second interconnect;
a continuous conductive layer over the passivation layer and the first interconnect and the second interconnect to make electrical contact with the first interconnect and the second interconnect and electrically connect the first interconnect and the second interconnect; and
a first conductive structure and a second conductive structure on the continuous conductive layer, wherein the first conductive structure is physically spaced apart from the second conductive structure and, wherein the first conductive structure is electrically coupled to the second conductive structure by way of the continuous conductive layer, wherein a combination of the first conductive structure, the second conductive structure, and the continuous conductive layer defines a conductive feature that electrically couples the first interconnect and the second interconnect.
7. The semiconductor device of claim 6 , wherein the continuous conductive layer is further characterized as including remaining portions of an adhesion/barrier layer and the first conductive structure and the second conductive structure are further characterized as power metal segments.
8. The semiconductor device of claim 6 , wherein the conductive feature is further characterized as a segmented power metal structure.
9. The semiconductor device of claim 6 wherein the first conductive structure and the second conductive structure include a metal selected from a group consisting of copper, nickel and gold.