Granted Patent B2

US 7,247,208 · App. 10/483,036 · Granted Jul 24, 2007

Abstract

Claims (16)

1. A process for cleaning photoresist or plasma etch or ash residue from a microelectronic substrate having copper metallization and at least one of a porous dielectric, a low-κ or high-κ dielectric, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or plasma etch or ash residue from the substrate, wherein the cleaning composition is free of HF, ammonia, and primary and secondary amines and consists of:

from about 0.05 to 20% by weight of one or more tetraalkylammonium fluoride salts of the formula

(R) 4 N +F −

wherein each R is independently a substituted or unsubstituted alkyl group;

from about 5 to about 99.95% by weight of at least one polar, water miscible, copper/low-κ compatible organic solvent or both water and said at least one polar, water miscible, copper/low-κ compatible organic solvent wherein at least one said organic solvent is selected from the group consisting of dimethyl sulfoxide. sulfolane, dimethyl piperidone, 1-(2-hydroxyethyl)-2-pyrrolidinone, 1-methyl-2-pyrrolidinone, dimethylacetamide, acetonitrile and isobutylnitrile;

from about 5 to about 80% by weight of a metal corrosion inhibiting solvent selected from the group consisting of ethylene glycol, diethylene glycol, glycerol, diethylene glycol dimethyl ether, triethanolamine, N,N-dimethylethanolamine, 1-(2-hydroxyethyl)-2-pyrrolidinone, 4-(2-hydroxyethyl)morpholine, 2-(methylamino)ethanol, 2-amino-2-methyl-1-propanol. 1-amino-2-propanol, 2-(2-aminoethoxy)-ethanol, N-(2-hydroxyethyl) acetamide, N-(2-hydroxyethyl) succinimide and 3-(diethylamino)-1,2-propanediol;

from about 0 to 40% by weight of an other metal corrosion inhibitor compound selected from the group consisting of benzotriazole and aryl compounds containing 2 or more OH or OR groups where R is selected from the group consisting of alkyl or aryl groups;

from about 0 to 5% by weight of a surfactant;

from about 0 to 10% by weight of a metal ion free silicate compound; and

from about 0 to 5% by weight of a metal chelating agent selected from the group consisting of the organic acids (ethylenedinitrilo)tetraacetic acid (EDTA), butylenediaminetetraacetic acid, (1,2-cyclohexylenedinitrilo)tetraacetic acid (CyDTA), diethylenetriaminepentaacetic acid (DETPA), ethylenediaminetetrapropionic acid, (hydroxyethyl)ethylenediaminetriacetic acid (HEDTA), N,N,N′,N′-ethylenediaminetetra(methylenephosphonic) acid (EDTMP), triethylenetetraminehexaacetic acid (TTHA), 1,3-diamino-2-hydroxypropane-N,N,N′,N′-tetraacetic acid (DHPTA), methyliminodiacetic acid, propylenedlaminetetraacetic acid, nitrolotriacetic acid (NTA), citric acid, tartaric acid, gluconic acid, saccharic acid, glyceric acid, oxalic acid, phthalic acid, maleic acid, mandelic acid, malonic acid, lactic acid, salicylic acid, catechol, gallic acid, propyl gallate, pyrogallol, 8-hydroxyguinoline, and cysteine, and their isomers and salts.

2. A process of claim 1 wherein R of the tetraalkylammonium fluoride is an alkyl group containing 1 to 22 carbon atoms.

3. A process of claim 1 wherein the solvent is water and said at least polar, water miscible, copper/low-κ compatible organic is solvent selected from the group consisting of 1-(2-hydroxvethyl)-2-pyrrolidinone dimethyl sulfoxide, sulfolane, and dimethyl piperidone.

4. A process of claim 1 wherein the cleaning composition consists of tetramethylammonium fluoride, dimethyl sulfoxide, 1-(2-hydroxyethyl)-2-pyrrolidinone, water, triethanolamine and benzotriazole.

5. A process of claim 1 wherein the copper metallization comprises an essentially pure copper metallization of the substrate.

6. A process of claim 2 wherein R of the tetraalkylammonium fluoride is an alkyl group of from 1 to 6 carbon atoms.

7. A process of claim 6 wherein the tetraalkylammonium fluoride is a tetramethylammonium fluoride.

Assignments (17)