Semiconductor arrangement comprising transistors based on organic semiconductors and non-volatile read-write memory cells
View Patent ↗A semiconductor arrangement is disclosed, having transistors based on organic semiconductors and non-volatile read/write memory cells. The invention relates to a semiconductor arrangement, constructed from transistors, in the case of which the semiconductor path is composed of an organic semiconductor, and memory cells based on a ferroelectric effect perferably in a polymer, for use in RF-ID tags, for example.
1. A semiconductor arrangement that can be used in a smart card or in a tag and is applied to a flexible substrate, comprising:
at least one re-writeable memory cell;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor,
wherein the re-writeable memory cell is based on a ferroelectric effect in a memory material; and
circuitry for contactless reading from and writing to said at least one memory cell.
2. The semiconductor arrangement as in claim 1 , wherein the memory material is an organic polymer having ferroelectric properties.
3. The semiconductor arrangement as in claim 1 , wherein the memory material is an inorganic material having ferroelectric properties.
4. The semiconductor arrangement as in claim 1 , wherein a coercive voltage of the memory cell is adapted to an operating range of the semiconductor devices.
5. The semiconductor arrangement as in claim 1 , wherein the memory cells are configured to form a shift register.
6. The semiconductor arrangement as in claim 1 , wherein the semiconductor arrangement is configures such that an operation of reading an information item stored in the memory cell is effected destructively.
7. The semiconductor arrangement of claim 6 wherein the information item effected destructively by reading is then rewritten into the memory cell.
8. A semiconductor arrangement that can be used in a smart card or in a tag and is applied to a flexible substrate, comprising:
at least one re-writeable memory cell;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor,
wherein the re-writeable memory cell is based on a ferroelectric effect in a memory material; and
wherein passive and active semiconductor devices having semiconductor paths made of organic semiconductors, interconnects and insulator layers supplement the semiconductor arrangement to form an RF-ID tag.
9. A semiconductor arrangement that can be used in a smart card or in a tag and is applied to a flexible substrate, comprising:
at least one re-writeable memory cell;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor,
wherein the re-writeable memory cell is based on a ferroelectric effect in a memory material; and
organic selection transistors for addressing the memory cells.
10. A semiconductor arrangement that can be used in a smart card or in a tag and is applied to a flexible substrate, comprising:
at least one re-writeable memory cell;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor,
wherein the re-writeable memory cell is based on a ferroelectric effect in a memory material; and
a passive matrix for addressing the memory cells.
11. A semiconductor arrangement that can be used in a smart card or in a tag and is applied to a flexible substrate, comprising:
a paper or cardboard substrate;
at least one re-writeable memory cell; and
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor,
wherein the re-writeable memory cell is based on a ferroelectric effect in a memory material.
12. A semiconductor read/write memory structure for use in a smart card or in a tag and suitable for applying to a flexible substrate, comprising:
at least one memory cell capable of multiple read/write cycles, said memory cell made of an organic polymer memory material having ferroelectric effects defining two polarization states;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor; and
circuitry for contactless reading from and writing to said at least one memory cell.
13. The semiconductor read/write memory structure as in claim 12 , wherein the semiconductor arrangement is configured such that an operation of reading an information item stored in the memory cell is effected destructively.
14. The semiconductor read/write memory structure of claim 13 wherein the information item effected destructively by reading is then rewritten into the memory cell.
15. The semiconductor read/write memory structure as in claim 12 , wherein a coercive voltage of the memory cell is adapted to an operating range of the semiconductor devices.
16. A semiconductor read/write memory structure for use in a smart card or in a tag and suitable for applying to a flexible substrate, comprising:
at least one memory cell capable of multiple read/write cycles, said memory cell made of an organic polymer memory material having ferroelectric effects defining two polarization states;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor; and
organic selection transistors for addressing the memory cells.
17. A semiconductor read/write memory structure for use in a smart card or in a tag and suitable for applying to a flexible substrate, comprising:
at least one memory cell capable of multiple read/write cycles, said memory cell made of an organic polymer memory material having ferroelectric effects defining two polarization states;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor; and
a passive matrix for addressing the memory cells.
18. A semiconductor read/write memory structure for use in a smart card or in a tag and suitable for applying to a flexible substrate, comprising:
at least one memory cell capable of multiple read/write cycles, said memory cell made of an organic polymer memory material having ferroelectric effects defining two polarization states;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor; and
said memory cells configured to form a shift register.
19. A semiconductor read/write memory structure for use in a smart card or in a tag and suitable for applying to a flexible substrate, comprising:
at least one memory cell capable of multiple read/write cycles, said memory cell made of an organic polymer memory material having ferroelectric effects defining two polarization states;
at least one semiconductor device having a semiconductor path made of at least one organic semiconductor; and
wherein passive and active semiconductor devices having semiconductor paths made of organic semiconductors, interconnects and insulator layers supplement the semiconductor arrangement to form an RF-ID tag.