Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
View Patent ↗The invention provides alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions contain (a) one or more bases and (b) one or more metal corrosion inhibiting metal halides of the formula: W z MX y where M is a metal selected from the group Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru, and Sb; X is a halide selected from F, Cl, Br and I; W is selected from H, to an alkali or alkaline earth metal, and a metal ion-free hydroxide base moiety; y is a numeral of from 4 to 6 depending on the metal halide; and z is a numeral of 1, 2 or 3.
1. An alkaline composition having a pH of 9 or greater for stripping or cleaning integrated circuit substrates, comprising:
(a) one or more bases; and
(b) 0.05% to 10% by weight of one or more metal halide compounds of the formula:
W z MX y
where M is a metal selected from the group consisting of Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru, and Sb; X is a halide selected from the group consisting of F, Cl, Br and I; W is selected from the group consisting of H, an alkali or alkaline earth metal, and a metal ion-free hydroxide base moiety; y is a numeral of from 4 to 6 depending on the metal halide; and z is a numeral of from 1, 2 or 3.
2. A composition according to claim 1 wherein the composition is an aqueous, alkaline composition, the base component (a) is a metal ion-free bases and the base is present in the composition in an amount sufficient to produce a pH of the composition of from about 10 to about 13.
3. The composition of claim 1 wherein the base component (a) is selected from the group consisting of ammonium hydroxide, quaternary ammonium hydroxides and diamines.
4. The composition of claim 3 wherein the base component (a) is a tetraalkyl ammonium hydroxide containing alkyl groups of from 1 to 4 carbon atoms.
5. The composition of claim 2 wherein M is selected from the group consisting of Si, Ge, Zr and Sb.
6. The composition of claim 5 wherein the metal halide is selected from the group consisting of H 2 SiF 6 , H 2 GeF 6 , ((CH 3 ) 4 N) 2 GeF 6 , ((CH 3 ) 4 N) 2 SiF 6 , (NH 4 ) 2 SiF 6 and (NH 4 ) 2 GeF 6 .
7. The composition of claim 6 wherein the metal halide is H 2 SiF 6 .
8. The composition of claim 2 additionally comprising one or more additional components selected from the group consisting of organic solvents and co-solvents, metal chelating or complexing agents, silicates, fluorides, additional metal corrosion inhibitors, surfactants, titanium residue removal enhancing agents, oxidizing agents and bath stabilizing agents.
9. A composition of claim 2 comprising tetramethylammonium hydroxide, trans-(1,2-cyclohexylenedinitrilo)tetraacetic acid, hydrogen peroxide, water, and a metal halide compound selected from the group consisting of dihydrogen hexafluorosilicate, dihydrogenhexafluorogermanate and ammonium hexafluorogermanate.
10. A composition according to claim 9 having a pH of about 11.5.
11. A method for cleaning semiconductor wafer substrates, comprising:
contacting a semiconductor wafer substrate having a substrate surface for a time and at a temperature sufficient to clean unwanted contaminants and residues from said substrate surface with an alkaline composition having a pH of 9 or greater and comprising:
(a) one or more bases; and
(b) 0.5% to 10% by weight of the composition of one or more metal halide compounds of the formula:
W z MX y
where M is a metal selected from the group consisting of Si, Ge, Sn, Pt, P, B, Au, Ir, Os, Cr, Ti, Zr, Rh, Ru, and Sb; X is a halide selected from the group consisting of F, Cl, Br and I; W is selected from the group consisting of H, an alkali or alkaline earth metal, and a metal ion-free hydroxide base moiety; y is a numeral of from 4 to 6 depending on the metal halide; and z is a numeral of from 1, 2 or 3.
12. A method according to claim 11 wherein the composition is an aqueous, alkaline composition, the base component (a) is a metal ion-free bases and the base is present in the composition in an amount sufficient to produce a pH of the composition of from about 10 to about 13.
13. The method of claim 11 wherein the base component (a) is selected from the group consisting of ammonium hydroxide, quaternary ammonium hydroxides and diamines.
14. The method of claim 13 wherein the base component (a) is a tetraalkyl ammonium hydroxide containing alkyl groups of from 1 to 4 carbon atoms.
15. The method of claim 12 wherein M is selected from the group consisting of Si, Ge, Zr and Sb.
16. The method of claim 15 wherein the metal halide is selected from the group consisting of H 2 SiF 6 , H 2 GeF 6 , ((CH 3 ) 4 N) 2 GeF 6 , ((CH 3 ) 4 N) 2 SiF 6 , (NH 4 ) 2 SiF 6 and (NH 4 ) 2 GeF 6 .
17. The method of claim 16 wherein the metal halide is H 2 SiF 6 .
18. The method of claim 12 wherein the composition additionally comprises one or more additional components selected from the group consisting of organic solvents and co-solvents, metal chelating or complexing agents, silicates, fluorides, additional metal corrosion inhibitors, surfactants, titanium residue removal enhancing agents, oxidizing agents and bath stabilizing agents.
19. The method of claim 11 comprising tetramethylammonium hydroxide, trans-(1,2-cyclohexylenedinitrilo)tetraacetic acid, hydrogen peroxide, water, and a metal halide compound selected from the group consisting of dihydrogen hexafluorosilicate, dihydrogenhexafluorogermanate, and ammonium hexafluorogermanate.
20. The composition of claim 19 wherein the method has a pH of about 11.5.