Multi-resistive state material that uses dopants
View Patent ↗A multi-resistive state material that uses dopants is provided. A multi-resistive state material can be used in a memory cell to store information. However, a multi-resistive state material may not have electrical properties that are appropriate for a memory device. Intentionally doping a multi-resistive state material to modify the electrical properties can, therefore, be desirable.
1. A method of modifying electrical properties of a two-terminal memory element in a cross point memory array, comprising:
providing a substrate with active circuitry and multiple layers of conductive paths;
supplying a plurality of two-terminal memory elements between pairs of conductive array lines in a cross point array directly over the substrate, each two-terminal memory element comprising a praseodymium (Pr), calcium (Ca), manganese (Mn), and oxygen (O) perovskite as a multi-resistive state material;
doping the multi-resistive state material to modify at least one electrical property of the multi-resistive state material; and
applying at least one electrical pulse to the pair of conductive array lines, the electrical pulse having a selected polarity, a selected width, a selected maximum value and a selected waveform so as to create an electric field in the multi-resistive state material greater than a threshold electric field value to reversibly change the resistivity of the multi-resistive state material, the pulse having a pulse energy less than a pulse energy required to damage the multi-resistive state material.
2. The method of claim 1 , wherein:
doping the multi-resistive state material modifies resistivity.
3. The method of claim 2 , wherein:
the electrical pulse reversibly changes the resistivity of the multi-resistive state material to a value between 0.1 Ω-cm and 1.0 Ω-cm.
4. The method of claim 1 , wherein:
doping the multi-resistive state material modifies the amount of charge traps.
5. The method of claim 1 , wherein:
doping the multi-resistive state materials improves the data retention capability of the multi-resistive state material.
6. The method of claim 1 , wherein:
an interface between the pair of conductive array lines and the multi-resistive state material causes an ohmic effect.
7. The method of claim 1 , wherein:
an interface between the pair of conductive array lines and the multi-resistive state material causes a Schottky effect.
8. The method of claim 1 , wherein:
the electrical pulse reversibly changes the resistivity of the multi-resistive state material from either a high value to a low value or from a low value to a high value; and
doping the multi-resistive state material modifies the magnitude of the difference from the high value to the low value.
9. The method of claim 8 , wherein:
an interface between the pair of conductive array lines and the multi-resistive state material causes an ohmic effect.
10. The method of claim 8 , wherein:
an interface between the pair of conductive array lines and the multi-resistive state material causes a Schottky effect.
11. The method of claim 1 , wherein:
the electrical pulse reversibly changes the resistivity of the multi-resistive state material to a value between 0.1 Ω-cm and 1.0 Ω-cm.
12. The method of claim 1 , wherein:
doping the multi-resistive state material causes the multi-resistive state material's electrical properties to be more uniform, whereby the electrical properties of the multi-resistive state material have a greater predictability.
13. The method of claim 1 , wherein:
doping the multi-resistive state material additionally reduces the temperature sensitivity of the multi-resistive state material's resistance.
14. The method of claim 4 , wherein:
an interface between the pair of conductive array lines and the multi-resistive state material causes an ohmic effect.
15. The method of claim 4 , wherein:
an interface between the pair of conductive array lines and the multi-resistive state material causes a Schottky effect.
16. The method of claim 1 , wherein:
doping the multi-resistive state material reduces magnetic field dependence.
17. The method of claim 1 , wherein:
the selected waveform is either a square, saw-toothed, triangular, sine wave, or some combination thereof.
18. The method of claim 1 , wherein:
the selected maximum value of the selected waveform is between 1 volt and 15 volts.
19. The method of claim 1 , wherein:
the selected waveform has a duration between 1 nanosecond and 100 microseconds.
20. The method of claim 1 , wherein:
at least two electrical pulses are applied to the multi-resistive state material in order to reversibly change its resistivity.
21. The method of claim 1 , wherein:
the electrical pulse reversibly changes the resistivity of the multi-resistive state material from either a high value to a low value or from a low value to a high value; and
once the multi-resistive state material's resistivity is changed, application of an opposite polarity second electrical pulse will cause the multi-resistive state material's resistivity to revert back to a low value if it was changed to high, or a high value if it was changed to low.
22. The method of claim 1 , further comprising:
doping the multi-resistive state material with a second dopant to modify another electrical property of the multi-resistive state material.