Patent Assignment
Reel/Frame 016323/0107
Merger
Recorded: 2005-07-28
Received: 2005-07-28
Pages: 3
Assignor
UNITY SEMICONDUCTOR CORPORATION
Executed: 2004-07-12
Assignee
UNITY SEMICONDUCTOR CORPORATION
250 N WOLFE ROAD, SUNNYVALE, CA, 94085, UNITED STATES
Covered Properties
(31)
Memory Element Having Islands
Application:
10/868,578 →
Multi-Resistive State Element with Reactive Metal
Application:
10/773,549 →
Memory Array with High Temperature Wiring
Application:
10/765,406 →
Conductive Memory Array Having Page Mode and Burst Mode Read Capability
Application:
10/745,264 →
Conductive Memory Array Having Page Mode and Burst Mode Write Capability
Application:
10/745,178 →
Conductive Memory Stack with Sidewall
Application:
10/605,977 →
Conductive Memory Stack with Non-Uniform Width
Application:
10/605,963 →
Multi-Layer Conductive Memory Device
Application:
10/605,757 →
Conductive Memory Device with Conductive Oxide Electrodes
Application:
10/682,277 →
Adaptive Programming Technique for a Re-Writable Conductive Memory Device
Application:
10/680,508 →
Resistive Memory Device with a Treated Interface
Application:
10/665,882 →
Multi-Resistive State Material That Uses Dopants
Application:
10/604,606 →
2-Terminal Trapped Charge Memory Device with Voltage Switchable Multi-Level Resistance
Application:
10/634,636 →
Rewritable Memory with Non-Linear Memory Element
Application:
10/604,556 →
Re-Writable Memory with Multiple Memory Layers
Application:
10/612,191 →
Layout of Driver Sets in a Cross Point Memory Array
Application:
10/612,733 →
Line Drivers That Use Minimal Metal Layers
Application:
10/612,263 →
Line Drivers That Fit Within a Specified Line Pitch
Application:
10/613,099 →
Cross Point Memory Array with Fast Access Time
Application:
10/612,776 →
Memory Array of a Non-Volatile Ram
Application:
10/249,846 →
Non-Volatile Memory with a Single Transistor and Resistive Memory Element
Application:
10/249,848 →
Low Temperature Deposition of Complex Metal Oxides (Cmo) Memory Materials for Non-Volatile Memory Integrated Circuits
Application:
10/387,773 →
Laser Annealing of Complex Metal Oxides (Cmo) Memory Materials for Non-Volatile Memory Integrated Circuits
Application:
10/387,799 →
High-Density Nvram
Application:
10/360,005 →
Multi-Output Multiplexor
Application:
10/330,150 →
Cross Point Memory Array Using Distinct Voltages
Application:
10/330,964 →
Multiplexor Having a Reference Voltage on Unselected Lines
Application:
10/330,965 →
Cross Point Memory Array Using Multiple Modes of Operation
Application:
10/330,153 →
Cross Point Memory Array Using Multiple Thin Films
Application:
10/330,512 →
Providing a Reference Voltage to a Cross Point Memory Array
Application:
10/330,170 →
Cross Point Memory Array with Memory Plugs Exhibiting a Characteristic Hysteresis
Application:
10/330,900 →