Semiconductor device having a wire bond pad and method therefor
View Patent ↗An integrated circuit ( 50 ) has a wire bond pad ( 53 ). The wire bond pad ( 53 ) is formed on a passivation layer ( 18 ) over active circuitry ( 26 ) and/or electrical interconnect layers ( 24 ) of the integrated circuit ( 50 ). The wire bond pad ( 53 ) is connected to a plurality of final metal layer portions ( 51, 52 ). The plurality of final metal layer portions ( 51, 52 ) are formed in a final interconnect layer of the interconnect layers ( 24 ). In one embodiment, the bond pad ( 53 ) is formed from aluminum and the final metal layer pads are formed from copper. The wire bond pad ( 53 ) allows routing of conductors in a final metal layer ( 21 ) directly underlying the bond pad ( 53 ), thus allowing the surface area of the semiconductor die to be reduced.
1. A method for forming an integrated circuit comprising:
forming a first interconnect layer over a substrate;
forming a second interconnect layer over the first interconnect layer;
depositing a passivation layer over the second interconnect layer;
forming an opening in the passivation layer that exposes a first electrical conductor of the second interconnect layer;
forming a wire bond pad that electrically connects to the first electrical conductor through the opening in the passivation layer; wherein the bond pad extends over the passivation layer and is positioned directly over a second electrical conductor that is in the second interconnect layer, wherein the second electrical conductor is not directly attached to the wire bond pad and is electrically isolated from the wire bond pad by only the passivation layer; and
attaching a wire bond to the wire bond pad.
2. The method of claim 1 wherein the first interconnect layer includes copper.
3. The method of claim 1 , wherein the second interconnect layer includes copper.
4. The method of claim 1 , wherein the passivation layer is further characterized as a final passivation layer.
5. The method of claim 1 , wherein the wire bond pad includes aluminum.
6. The method of claim 5 , further comprising forming a barrier layer over the first electrical connector before forming the wire bond pad, wherein the barrier layer is positioned between the first electrical connector and the wire bond pad.
7. The method of claim 1 , wherein the second electrical conductor is for routing power supply voltage to electrical circuits on the integrated circuit.
8. The method of claim 1 , wherein a third conductor is formed using portions of the second interconnect layer and wherein the third conductor is not directly attached to the wire bond pad and routes a power supply voltage under the wire bond pad.
9. A method for forming an integrated circuit comprising attaching a wire bond to a bond pad, wherein the bond pad electrically connects to a first conductor in a final interconnect layer through an opening in a passivation layer, wherein a portion of the bond pad extends over the passivation layer, and wherein the bond pad is substantially directly over a width of a second conductor in the final interconnect layer, the second conductor not directly connected to the bond pad and is electrically isolated from the bond pad by only the passivation layer.
10. The method of claim 9 , wherein the wire bond is attached to the portion of the bond pad that extends over the passivation layer.
11. The method of claim 10 , further comprising a third electrical conductor directly underlying the portion of the bond pad that extends over the passivation layer, wherein the third conductor is not directly attached to the bond pad.
12. A method of forming a semiconductor device comprising
forming a wire bond pad over a passivation layer that electrically connects to a first electrical conductor in a final interconnect layer through an opening in the passivation layer; wherein the bond pad is positioned substantially directly over a width of a second electrical conductor in the final interconnect layer, wherein the second electrical conductor is not directly attached to the wire bond pad and is electrically isolated from the wire bond pad by only the passivation layer.
13. The method of claim 12 , wherein the final interconnect layer includes copper.
14. The method of claim 12 , wherein the passivation layer is further characterized as a final passivation layer.
15. The method of claim 12 , wherein the wire bond pad includes aluminum.